Abstract: In a ceramic multilayer chip capacitor comprising alternately stacked internal electrodes of Ni or Ni alloy and dielectric layers, an oxide layer having a different composition from the dielectric layer is formed on the periphery of each internal electrode. The dielectric layer consists essentially of grains and a grain boundary phase, the percent area of the grain boundary phase being up to 2% of the area of a cross section of the dielectric layer. The capacitor is prepared by alternately stacking Ni or Ni alloy and a dielectric material in layer form, firing and then heat treating the stack under predetermined oxygen partial pressures. The dielectric material is a barium titanate base oxide material. The capacitor has a long effective life.