Abstract: The present invention provides a resist composition which can achieve high sensitivity and high resolvability in a patterning process. A resist composition containing a hypervalent iodine compound represented by the following formula (1), a carboxy group-containing compound, and a solvent. R11 is a halogen atom, or a hydrocarbyl group having 1 to 10 carbon atoms and optionally containing a heteroatom. R12 is a halogen atom, or a hydrocarbyl group having 1 to 40 carbon atoms and optionally containing a heteroatom. R14 is a halogen atom, or a hydrocarbyl group having 1 to 40 carbon atoms and optionally containing a heteroatom. R13 is a carbonyl group, or a hydrocarbylene group having 1 to 10 carbon atoms and optionally containing a heteroatom. X1 is an oxygen atom, a nitrogen atom, or a sulfur atom, and when X1 is a nitrogen atom, R15 is present.

Abstract: The present invention is a resist composition including at least one kind of hypervalent iodine compounds selected from the following formulae (1), (2), and (3), a carboxy group-containing compound, and a solvent. In the formula, n1 represents 0 to 2; n2 represents 0 to 2; n3 represents 0 to 3; R11 to R13 represent a halogen atom or a hydrocarbyl group having 1 to 10 carbon atoms; X1 to X3 represent *—O—XA1— or *—XA2(—R14)—C(?O)—; XA1 represents a carbonyl group or a hydrocarbylene group having 1 to 10 carbon atoms; XA2 represents nitrogen or sulfur; and R14 represents a hydrogen atom, a halogen atom, or a hydrocarbyl group having 1 to 20 carbon atoms. This can provide a non-chemically amplified resist composition that is excellent in sensitivity and a resolution limit in photolithography with a high-energy beam, in particular in electron beam (EB) lithography and EUV lithography.

Abstract: The present invention is a hypervalent iodine compound having a structure represented by the following general formula (1), where R1 and R2 each independently represent a halogen atom or a hydrocarbyl group having 1 to 10 carbon atoms and optionally containing a heteroatom, the R1 and the R2 optionally being bonded to each other to form a ring together with the carbon atoms bonded thereto and the atoms between the carbon atoms. This can provide: a non-chemically amplified resist composition excellent in sensitivity and resolution in lithography using a high-energy beam, especially electron beam (EB) lithography and EUV lithography; a laminate obtained from the resist composition; and a patterning process using the resist composition.

Abstract: The present invention is a resist composition containing: at least one kind of hypervalent iodine compound selected from the following formulae (1), (2), and (3); a carboxy-group-containing compound; and a solvent. This can provide: a non-chemically amplified resist composition excellent in sensitivity and limiting resolution in photolithography using a high-energy beam, especially EB lithography and EUV lithography; a laminate including the resist composition; and a patterning process using the resist composition.

Abstract: The present invention is a patterning process including the steps of: (i) forming a resist pattern on a support by using a resist film obtained from a resist composition containing a hypervalent iodine compound, a carboxy-group-containing compound, and a solvent; (ii) forming a pattern-reversal film on the support having the formed resist pattern by applying a material containing an organotitanium compound and a solvent; and (iii) removing the resist pattern by etching to form a reverse pattern. This can provide a patterning process including: forming a resist pattern by using a non-chemically amplified resist composition excellent in sensitivity and limiting resolution; and further reversing the pattern by using an organotitanium-compound-containing material having high etching resistance.

Abstract: The present invention is the resist composition includes a compound represented by the following general formula (1) and a solvent. This can provide a resist composition that exhibits excellent sensitivity, stability, and ease of handling for photolithography using a high-energy beam, particularly EB lithography and EUV lithography, as well as a patterning process that uses the resist composition.

Abstract: A resist composition containing a hypervalent iodine compound represented by the following formula (1), a carboxy group-containing compound, and a solvent: wherein a1 and b1 are each integers, when a1 is 0, b1 is 0 to 4, when a1 is 1, b1 is 0 to 6, and when a1 is 2, b1 is 0 to 8; R11 is a halogen atom, or hydrocarbyl group having 1 to 10 carbon atoms and optionally containing a heteroatom; R21 is a halogen atom, or hydrocarbyl group having 1 to 40 carbon atoms and optionally containing a heteroatom; X is NR31 or S; and R31 is a hydrogen atom, a halogen atom, or hydrocarbyl group having 1 to 20 carbon atoms and optionally containing a heteroatom. This provides a non-chemically amplified resist composition excellent in sensitivity and resolvability in photolithography with a high energy line, and a patterning process using the resist composition.

Abstract: The present invention is a resist composition containing a hypervalent iodine compound, a carboxy-group-containing polymer, and a solvent, where the carboxy-group-containing polymer includes a repeating unit of a carboxylic acid derivative, represented by the following formula (1), and the polymer has a dispersity Mw/Mn of 1.30 or less, where Mw is a weight-average molecular weight and Mn is a number-average molecular weight measured by gel permeation chromatography. This can provide: a non-chemically amplified resist composition excellent in sensitivity and limiting resolution in photolithography using a high-energy beam; a laminate including the resist composition; a patterning process using the resist composition; and a method for manufacturing the resist composition.

Abstract: A patterning process for forming a pattern, including the steps of: (i) forming a resist pattern on a support using a resist film obtained from a resist composition containing a hypervalent iodine compound, a carboxy group-containing compound, and a solvent; (ii) applying a material for forming a reversed pattern onto the support having the resist pattern formed to form a coating film for pattern-reversing; and (iii) removing the resist pattern by etching to form a reversed pattern. The patterning process can be applied to photolithography using a high-energy beam, particularly to electron beam (EB) lithography and an extreme ultraviolet ray (EUV), and in which a resist pattern is formed by using a non-chemically amplified resist composition having excellent sensitivity and an excellent resolution limit and the pattern is reversed by using a material for forming a reversed pattern that has high etching resistance.

Abstract: The resist composition contains a polymer containing a repeat unit having a hypervalent iodine structure having the formula (1), a carboxy group-containing compound, and a solvent. The non-chemically amplified resist composition is excellent in sensitivity and maximum resolution in photolithography using high-energy radiation such as electron beam (EB) lithography and EUV lithography.

Abstract: The present invention is a resist composition containing: a hypervalent iodine compound represented by the following formula (1); a carboxy-group-containing compound; and a solvent, where R1 and R2 each independently represent a halogen atom or a hydrocarbyl group having 1 to 10 carbon atoms and optionally containing a heteroatom and may be bonded to each other to form a ring together with the carbonyloxy groups bonded thereto and the atoms between the carbonyloxy groups, and R3 and R4 each independently represent a halogen atom or a hydrocarbyl group optionally containing a heteroatom and may be bonded to each other to form a ring together with the iodine atoms bonded thereto and the atom between the iodine atoms. This can provide: a resist composition excellent in sensitivity and resolution in photolithography using a high-energy beam, such as EB and EUV lithography; a laminate including the resist composition; and a patterning process using the resist composition.

Abstract: A resist composition including a hypervalent iodine compound represented by formula (1), a carboxy group-containing compound, and a solvent. In formula (1), “n” represents an integer of 0 to 4 when “m” is 0, an integer of 0 to 6 when “m” is 1, and an integer of 0 to 8 when “m” is 2; R1, R2, and R3 represent a halogen atom or a hydrocarbyl group having 1 to 10 carbon atoms; R4 represents a halogen atom or a hydrocarbyl group having 1 to 40 carbon atoms; R5 represents a carbonyl group or a hydrocarbylene group having 1 to 10 carbon atom; and I and R5 are bonded to adjacent carbon atoms of aromatic ring. This can provide: a resist composition that exhibits excellent sensitivity and resolution in photolithography using a high-energy beam, particularly in electron beam (EB) lithography and EUV lithography; and a patterning process using resist composition.

Abstract: A resist composition comprising a hypervalent iodine compound, a carboxylic acid derivative, and a solvent is provided. When processed by photolithography using high-energy radiation, the resist composition exhibits a high sensitivity and improved maximum resolution. The non-chemically-amplified resist composition exhibits a high sensitivity and improved maximum resolution when processed by photolithography using high-energy radiation, typically EB and EUV lithography.

Abstract: A resist composition comprising a hypervalent bismuth compound having formula (1) and a solvent is provided. When processed by photolithography using high-energy radiation, the resist composition exhibits a high sensitivity and resolution. The non-chemically-amplified resist composition exhibits a high sensitivity and resolution when processed by photolithography using high-energy radiation, typically EB and EUV lithography.

Abstract: A laminate including a substrate, a silicon-containing resist underlayer film obtained from a silicon-containing resist underlayer film composition that contains a thermally crosslinkable polysiloxane containing any one or more from repeating units represented by formulae (1) to (3) and any one or more from repeating units represented by formulae (4) to (6), and a resist film obtained from a resist composition that contains at least one hypervalent iodine compound selected from a hypervalent iodine compound represented by formula (7), a hypervalent iodine compound represented by formula (8) and a hypervalent iodine compound represented by formula (9), a carboxy group-containing compound, and a solvent, in the listed order. This can provide a laminate that can satisfy both high sensitivity and high resolvability and allow for formation of a fine pattern in photolithography with a high energy line, a process for manufacturing such a laminate, and such a patterning process.

Abstract: A positive resist composition is provided comprising a base polymer end-capped with a salt consisting of an ammonium cation linked to a sulfide group and a fluorinated anion. Because of controlled acid diffusion, a resist film of the composition forms a pattern of good profile with a high resolution and reduced edge roughness or dimensional variation.

Abstract: The present invention is a method for manufacturing a non-chemically amplified resist composition, including, in the following order, the steps of: (i) placing a carboxy-group-containing polymer, a hypervalent iodine compound, and a solvent in a container and mixing together to prepare a fundamental resist composition; (ii) collecting part of the fundamental resist composition, forming a resist film on a test substrate by using the collected fundamental resist composition, and evaluating a film physical property of the resist film; and (iii) adding an additional material to the fundamental resist composition and mixing together to achieve a target film physical property based on an evaluation result of the step (ii). This can provide: a method for manufacturing a non-chemically amplified resist composition whose quality is controlled to be constant; and a patterning process.

Abstract: The present invention is a method for manufacturing a non-chemically amplified resist composition, including, in the following order, the steps of: (i) placing a carboxylic acid compound, a hypervalent iodine compound, and a solvent in a container and mixing together to prepare a fundamental resist composition; (ii) collecting part of the fundamental resist composition, forming a resist film on a test substrate by using the collected fundamental resist composition, and evaluating a film physical property of the resist film; and (iii) adding an additional material to the fundamental resist composition and mixing together to achieve a target film physical property based on an evaluation result of the step (ii). This can provide: a method for manufacturing a non-chemically amplified resist composition whose quality is controlled to be constant; and a patterning process.

Abstract: A resist composition comprising a hypervalent iodine compound, an onium salt, a carboxy-containing compound, and a solvent is provided. When processed by photolithography using high-energy radiation, the resist composition exhibits a high sensitivity and resolution. The non-chemically-amplified resist composition exhibits a high sensitivity and maximum resolution when processed by photolithography using high-energy radiation, typically EB and EUV lithography, and a patterning process using the same.

Abstract: The non-chemically-amplified resist composition exhibits a high sensitivity and maximum resolution when processed by photolithography using high-energy radiation, typically EB and EUV lithography. The non-chemically-amplified resist composition can be used in a patterning process. The resist composition comprises a hypervalent iodine compound, a carboxy-containing polymer, and a solvent is provided. When processed by EB or EUV lithography, the resist composition exhibits a high sensitivity and resolution.