Abstract: The present invention is a phosphor expressed by the general formula (A1?xRxM2X)m(M2X4)n (wherein the element A is one or more types of element selected from Li, Na, Be, Mg, Ca, Sr, Ba, Sc, Y, La, Gd, and Lu, the element R is one or more types of activating agent selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb, the element M is one or more types of element selected from Si, Ge, Sn, Ti, Hf, Zr, Be, B, Al, Ga, In, Tl, and Zn, the element X is one or more types of element selected from oxygen and nitrogen, n and m are integers of 1 or more, and x is a real number defined by 0<x<1), as well as a manufacturing method for the same, and a light-emitting device that uses this phosphor.

Abstract: A method for providing a phosphor, including a kneading step in which a raw material is kneaded to provide a raw material mixture; a sintering step in which the raw material mixture is sintered; and a heat treatment step in which the sintered raw material mixture is heat-treated, wherein the raw material includes at least one or more M-containing materials selected from MSi2, MSiN2, M2Si5N8, M3Al2N4 and MSi6N8, wherein M is one or more divalent elements selected from M(0) and M(1).

Abstract: An illumination device for a display device, which is formed from a substrate and a plurality of white light-emitting devices disposed on top of the substrate, and can be used as a backlight for a liquid crystal display panel, wherein the white light-emitting devices have a light source and a phosphor that is excited by the light source and emits light, and a fluorescent material with a composition represented by a general formula: M(0)aM(1)bM(2)x?(vm+n)M(3)(vm+n)?yOnNz?n is used as the phosphor.

Abstract: The present invention provides a fluorescent substance exhibiting higher brightness as compared to conventional fluorescent substances, a method for producing the same, and a light-emitting device using such a fluorescent substance. Specifically, the fluorescent substance comprises an ?-sialon crystal structure having the same crystal structure with an ?-type silicon nitride crystal, which includes at least an M(0) element (where M(0) represents one or two elements selected from Sr and La), an M(1) element (where M(1) represents one or more elements selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm and Yb), Si, Al, and nitrogen.

Abstract: The invention is a phosphor which includes a phosphor material having a composition represented by a general formula: M(0)aM(1)bM(2)x?(vm+n)M(3)(vm+n)?yOnNz?n, wherein M(0) is one or more elements selected from Li, Na, Be, Mg, Ca, Sr, Ba, Sc, Y, La, Gd and Lu; M(1) is one or more activators selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm and Yb; M(2) is one or more elements selected from Si, Ge, Sn, Ti, Hf and Zr; M(3) is one or more elements selected from Be, B, Al, Ga, In, Tl and Zn; O is oxygen; N is nitrogen; and an atomic ratio of M(0), M(1), M(2), M(3), O and N is adjusted to satisfy the following: x, y and z satisfy 33?x?51, 8?y?12 and 36?z?56; a and b satisfy 3?a+b?7 and 0.001?b?1.2; m and n satisfy 0.8·me?m?1.2·me and 0?n?7 in which me=a+b; and v satisfies v={a·v(0)+b·v(1)}/(a+b) (wherein v(0) is a valence of M(0) ion and v(1) is a valence of M(1) ion). The invention also relates to a method for producing the phosphor and a light-emitting device using the phosphor.

Abstract: The present invention is a phosphor expressed by the general formula (A1?xRxM2X)m(M2X4)n (wherein the element A is one or more types of element selected from Li, Na, Be, Mg, Ca, Sr, Ba, Sc, Y, La, Gd, and Lu, the element R is one or more types of activating agent selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb, the element M is one or more types of element selected from Si, Ge, Sn, Ti, Hf, Zr, Be, B, Al, Ga, In, Tl, and Zn, the element X is one or more types of element selected from oxygen and nitrogen, n and m are integers of 1 or more, and x is a real number defined by 0<x<1), as well as a manufacturing method for the same, and a light-emitting device that uses this phosphor.

Abstract: A phosphor represented by M1(x1)M2(x2)M312(O,N)16, wherein M1 denotes one or more metal elements selected from Li, Mg, Ca, Sr, Ba, Y, La, Gd and Lu, M2 denotes one or more metal elements selected from Ce, Pr, Eu, Tb, Yb and Er, M3 denotes one or more metal elements selected from Si, Ge, Sn, B, Al, Ga and In, and x1 and x2 satisfy 0<x1, x2<2 and 0<x1+x2<2. The phosphor may be an ?-sialon-based phosphor containing at least one of Sr and Ba in an amount of 5 mass % or less. The respective phosphors are manufactured by a method that includes firing a raw material mixture of the phosphor in a nonoxidizing atmosphere at 1600 to 2200° C. A light-emitting apparatus is made possible by combining the respective phosphors with a light-emitting device.

Abstract: An illumination device for a display device, which is formed from a substrate and a plurality of white light-emitting devices disposed on top of the substrate, and can be used as a backlight for a liquid crystal display panel, wherein the white light-emitting devices have a light source and a phosphor that is excited by the light source and emits light, and a fluorescent material with a composition represented by a general formula: M(0)aM(1)bM(2)x?(vm+n)M(3)(vm+n)?yOnNz?n is used as the phosphor.

Abstract: A fluorescent material is combined with a blue light-emitting diode or an ultraviolet light-emitting diode and consequently enabled to emit a white light. An oxynitride-based fluorescent material is formed by substituting Eu for part of M in a composition of MOSi2N2O, wherein M denotes one or more metals selected from among Be, Mg, Ca, Sr and Ba.

Abstract: The invention is a phosphor which includes a phosphor material having a composition represented by a general formula: M(0)aM(1)bM(2)x?(vm+n)M(3)(vm+n)?yOnNz?n, wherein M(0) is one or more elements selected from Li, Na, Be, Mg, Ca, Sr, Ba, Sc, Y, La, Gd and Lu; M(1) is one or more activators selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm and Yb; M(2) is one or more elements selected from Si, Ge, Sn, Ti, Hf and Zr; M(3) is one or more elements selected from Be, B, Al, Ga, In, Tl and Zn; O is oxygen; N is nitrogen; and an atomic ratio of M(0), M(1), M(2), M(3), O and N is adjusted to satisfy the following: x, y and z satisfy 33?x?51, 8?y?12 and 36?z?56; a and b satisfy 3?a+b?7 and 0.001?b?1.2; m and n satisfy 0.8·me?m?1.2·me and 0?n?7 in which me=a+b; and v satisfies v={a·v(0)+b·v(1)}/(a+b) (wherein v(0) is a valence of M(0) ion and v(1) is a valence of M(1) ion). The invention also relates to a method for producing the phosphor and a light-emitting device using the phosphor.

Abstract: The present invention provides a fluorescent substance exhibiting higher brightness as compared to conventional fluorescent substances, a method for producing the same, and a light-emitting device using such a fluorescent substance. Specifically, the fluorescent substance comprises an ?-sialon crystal structure having the same crystal structure with an ?-type silicon nitride crystal, which includes at least an M(0) element (where M(0) represents one or two elements selected from Sr and La), an M(1) element (where M(1) represents one or more elements selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm and Yb), Si, Al, and nitrogen.

Abstract: An oxynitride-based fluorescent material is formed of what results from substituting Eu for part of M of a general formula 2MO.Si3N4, wherein M denotes one or more elements selected from among Be, Mg, Ca, Sr and Ba. The oxynitride-based fluorescent material can be produced by a method comprising mixing an oxide of Be, Mg, Ca, Sr, Ba or Eu, or a compound of Be, Mg, Ca, Sr, Ba or Eu enabled by heating to form an oxide, and silicon nitride or a compound enabled by heating to form silicon nitride to obtain a mixture and firing the mixture in a vacuum or a non-oxidizing atmosphere at 1200 to 1900° C.

Abstract: An oxynitride-based fluorescent material is formed of what results from substituting Eu for part of M of a general formula M3Si2N2O4, wherein M denotes one or more elements selected from among Be, Mg, Ca, Sr and Ba. The oxynitride-based fluorescent material can be produced by a method comprising mixing an oxide of Be, Mg, Ca, Sr, Ba or Eu, or a compound of Be, Mg, Ca, Sr, Ba or Eu enabled by heating to form an oxide, silicon nitride or a compound enabled by heating to form silicon nitride, and silicon oxide or a compound enabled by heating to form silicon oxide to obtain a mixture and firing the mixture in a vacuum or a non-oxidizing atmosphere at 1200 to 1900° C.

Abstract: A phosphor represented by M1(x1)M2(x2)M312(O, N)16, wherein M1 denotes one or more metal elements selected from Li, Mg, Ca, Sr, Ba, Y, La, Gd and Lu, M2 denotes one or more metal elements selected from Ce, Pr, Eu, Tb, Yb and Er, M3 denotes one or more metal elements selected from Si, Ge, Sn, B, Al, Ga and In, and x1 and x2 satisfy 0<x1, x2<2 and 0<x1+x2<2. The phosphor may be an ?-sialon-based phosphor containing at least one of Sr and Ba in an amount of 5 mass % or less. The respective phosphors are manufactured by a method that includes firing a raw material mixture of the phosphor in a nonoxidizing atmosphere at 1600 to 2200° C. A light-emitting apparatus is made possible by combining the respective phosphors with a light-emitting device.

Abstract: An oxynitride-based fluorescent material is formed of what results from substituting Eu for part of M of a general formula 2MO.Si3N4, wherein M denotes one or more elements selected from among Be, Mg, Ca, Sr and Ba. The oxynitride-based fluorescent material can be produced by a method comprising mixing an oxide of Be, Mg, Ca, Sr, Ba or Eu, or a compound of Be, Mg, Ca, Sr, Ba or Eu enabled by heating to form an oxide, and silicon nitride or a compound enabled by heating to form silicon nitride to obtain a mixture and firing the mixture in a vacuum or a non-oxidizing atmosphere at 1200 to 1900° C.

Abstract: A fluorescent material is combined with a blue light-emitting diode or an ultraviolet light-emitting diode and consequently enabled to emit a white light. An oxynitride-based fluorescent material is formed by substituting Eu for part of M in a composition of MOSi2N2O, wherein M denotes one or more metals selected from among Be, Mg, Ca, Sr and Ba.

Abstract: An oxynitride-based fluorescent material is formed of what results from substituting Eu for part of M of a general formula M3Si2N2O4, wherein M denotes one or more elements selected from among Be, Mg, Ca, Sr and Ba. The oxynitride-based fluorescent material can be produced by a method comprising mixing an oxide of Be, Mg, Ca, Sr, Ba or Eu, or a compound of Be, Mg, Ca, Sr, Ba or Eu enabled by heating to form an oxide, silicon nitride or a compound enabled by heating to form silicon nitride, and silicon oxide or a compound enabled by heating to form silicon oxide to obtain a mixture and firing the mixture in a vacuum or a non-oxidizing atmosphere at 1200 to 1900° C.

Abstract: A phosphor characterized by being represented by the formula Eu2-XLnXMYO3(y+1), wherein 0 ?x <2, Y is 2 or 3, Ln represents at least one member selected from among Y, La, and Gd, and M represents at least one member selected from the group consisting of W and Mo. This phosphor is effectively excited by visible light or UV radiation having a wavelength of 220 to 550 nm for a desired light emission, particularly red light emission with a high efficiency. Therefore, the phosphor is advantageously employed in light-emitting devices such as a light-emitting screen, a light-emitting diode, and a fluorescent lamp.

Abstract: By providing a cBN sintered body which containing, as a binder, at least one species selected from among nitrides, carbides, carbide nitrides, and borides of a Group IVa, Group Va, or Group VIa; and a boride containing a Group VIII element, and a Group IVa element, Group Va element, or Group VIa element; or when containing, as a binder, at least one species selected from among nitrides, carbides, carbide nitrides, and borides of a Group IVa, Group Va, or Group VIa element; a boride containing a Group VIII element, and a Group IVa element, Group Va element, or Group VIa element; and an Al compound, there can be provided a cBN sintered body which attain lower reactivity with a material to be cut while maintaining excellent ability to retain cBN grains.

Abstract: hBN is converted to cBN by keeping it under temperature and pressure conditions within the range of stability of cubic boron nitride, in the presence of at least one compound selected from amides, imides and carbides of alkali metals and alkaline earth metals, as well as a silicon source and/or a boron source.