Patents by Inventor Kousuke Terauchi

Kousuke Terauchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Peltier module for laser diode
    Patent number: 9490412
    Abstract: A Peltier module for laser diode that can be mounted with high melting point solder is provided. A Peltier module for laser diode includes: a heat dissipation-side substrate; a heat dissipation-side electrode; a p-type thermoelectric conversion element and an n-type thermoelectric conversion element; a solder joint layer; and Ni-containing layers. The solder joint layer is disposed between the heat dissipation-side electrode and each of the p-type and n-type thermoelectric conversion elements, and includes Ni intermetallic compound containing Au and Sn, Au5Sn intermetallic compound, and a eutectic composition including Au5Sn intermetallic compound and AuSn intermetallic compound. The Ni-containing layer is disposed between the solder joint layer and the heat dissipation-side electrode and between the solder joint layer and each of the p-type and n-type thermoelectric conversion elements. The solder joint layer has a eutectic ratio of 15.1% or less.
    Type: Grant
    Filed: September 12, 2013
    Date of Patent: November 8, 2016
    Assignee: KELK Ltd.
    Inventors: Kousuke Terauchi, Masataka Yamanashi, Hideyuki Ishikawa, Akio Konishi
  • PELTIER MODULE FOR LASER DIODE
    Publication number: 20150221846
    Abstract: A Peltier module for laser diode that can be mounted with high melting point solder is provided. A Peltier module for laser diode includes: a heat dissipation-side substrate; a heat dissipation-side electrode; a p-type thermoelectric conversion element and an n-type thermoelectric conversion element; a solder joint layer; and Ni-containing layers. The solder joint layer is disposed between the heat dissipation-side electrode and each of the p-type and n-type thermoelectric conversion elements, and includes Ni intermetallic compound containing Au and Sn, Au5Sn intermetallic compound, and a eutectic composition including Au5Sn intermetallic compound and AuSn intermetallic compound. The Ni-containing layer is disposed between the solder joint layer and the heat dissipation-side electrode and between the solder joint layer and each of the p-type and n-type thermoelectric conversion elements. The solder joint layer has a eutectic ratio of 15.1% or less.
    Type: Application
    Filed: September 12, 2013
    Publication date: August 6, 2015
    Inventors: Kousuke Terauchi, Masataka Yamanashi, Hideyuki Ishikawa, Akio Konishi