Abstract: A quartz glass crucible (1) includes: a crucible body (10) made of silica glass; and a crystallization-accelerator-containing layer (13) formed on an outer surface of the crucible body (10). A concentration of a crystallization accelerator contained in the crystallization-accelerator-containing layer (13) is 1.0×1013 atoms/cm2 or more and 4.8×1015 atoms/cm2 or less. The quarts glass crucible is intended to be capable of not only enduring a single crystal pulling-up process that takes a very long time, such as multi-pulling, but also stably controlling the oxygen concentration and crystal diameter of a silicon single crystal by eliminating a gap between the carbon susceptor and the crucible as much as possible.

Abstract: A quartz glass crucible 1 includes: a quartz glass crucible body 10 having a cylindrical side wall portion 10a, a curved bottom portion 10b, and a corner portion 10c which has a larger curvature than that of the bottom portion 10b and connects the side wall portion 10a and the bottom portion 10b to each other; and an inner-surface coating film 13A which contains a crystallization accelerator and is formed on an inner surface 10i of the quartz glass crucible body 10, in which the inner surface 10i of the quartz glass crucible body 10 is under compressive stress. The quartz glass crucible has high durability even at a high temperature during a single crystal pull-up step and is capable of reducing a generation ratio of pinholes in a silicon single crystal.

Abstract: In an exemplary embodiment, a quartz glass crucible 1 includes: a cylindrical crucible body 10 which has a bottom and is made of quartz glass; and crystallization-accelerator-containing coating films 13A and 13B which are formed on surfaces of the crucible body 10 so as to cause crystallization-accelerator-enriched layers to be formed in the vicinity of the surfaces of the crucible body 10 by heating during a step of pulling up a silicon single crystal by a Czochralski method. The quartz glass crucible is capable of withstanding a single crystal pull-up step undertaken for a very long period of time, such as multi-pulling, and a manufacturing method thereof.

Abstract: A quartz glass crucible 1 includes: a quartz glass crucible body 10 having a cylindrical side wall portion 10a, a curved bottom portion 10b, and a corner portion 10c which has a larger curvature than that of the bottom portion 10b and connects the side wall portion 10a and the bottom portion 10b to each other; and an inner-surface coating film 13A which contains a crystallization accelerator and is formed on an inner surface 10i of the quartz glass crucible body 10, in which the inner surface 10i of the quartz glass crucible body 10 is under compressive stress. The quartz glass crucible has high durability even at a high temperature during a single crystal pull-up step and is capable of reducing a generation ratio of pinholes in a silicon single crystal.

Abstract: A quartz glass crucible (1) includes: a cylindrical crucible body (10) which has a bottom and is made of quartz glass; and a first crystallization-accelerator-containing coating film (13A) which is formed on an inner surface (10a) so as to cause an inner crystal layer composed of an aggregate of dome-shaped or columnar crystal grains to be formed on a surface-layer portion of the inner surface (10a) of the crucible body (10) by heating during a step of pulling up the silicon single crystal by a Czochralski method. The quartz glass crucible is intended to withstand a single crystal pull-up step undertaken for a very long period of time.

Abstract: In an exemplary embodiment, a quartz glass crucible 1 includes: a cylindrical crucible body 10 which has a bottom and is made of quartz glass; and a first crystallization-accelerator-containing coating film 13A which is formed on an inner surface 10a so as to cause an inner crystal layer composed of an aggregate of dome-shaped or columnar crystal grains to be formed on a surface-layer portion of the inner surface 10a of the crucible body 10 by heating during a step of pulling up the silicon single crystal by a Czochralski method. The quartz glass crucible is capable of withstanding a single crystal pull-up step undertaken for a very long period of time.

Abstract: [Problems to be solved] Provided is a quartz glass crucible having high durability even at a high temperature during a single crystal pull-up step and capable of reducing a generation ratio of pinholes in a silicon single crystal. [Means to solve the problems] A quartz glass crucible 1 includes: a quartz glass crucible body 10 having a cylindrical side wall portion 10a, a curved bottom portion 10b, and a corner portion 10c which has a larger curvature than that of the bottom portion 10b and connects the side wall portion 10a and the bottom portion 10b to each other; and an inner-surface coating film 13A which contains a crystallization accelerator and is formed on an inner surface 10i of the quartz glass crucible body 10, in which the inner surface 10i of the quartz glass crucible body 10 is under compressive stress.

Abstract: Provided are a quartz glass crucible capable of withstanding a single crystal pull-up step undertaken for a very long period of time, such as multi-pulling, and a manufacturing method thereof. A quartz glass crucible 1 includes: a cylindrical crucible body 10 which has a bottom and is made of quartz glass; and crystallization-accelerator-containing coating films 13A and 13B which are formed on surfaces of the crucible body 10 so as to cause crystallization-accelerator-enriched layers to be formed in the vicinity of the surfaces of the crucible body 10 by heating during a step of pulling up a silicon single crystal by a Czochralski method.

Abstract: In an exemplary embodiment, a quartz glass crucible 1 includes: a cylindrical crucible body 10 which has a bottom and is made of quartz glass; and a first crystallization-accelerator-containing coating film 13A which is formed on an inner surface 10a so as to cause an inner crystal layer composed of an aggregate of dome-shaped or columnar crystal grains to be formed on a surface-layer portion of the inner surface 10a of the crucible body 10 by heating during a step of pulling up the silicon single crystal by a Czochralski method. The quartz glass crucible is capable of withstanding a single crystal pull-up step undertaken for a very long period of time.

Abstract: Provided is a method for manufacturing a vitreous silica crucible and a manufacturing apparatus for the same, which can reduce the amount of bubbles and impurities of a crucible inner surface and enhance a crystallization yield of silicon single crystal. A method for manufacturing a vitreous silica crucible of the invention includes a silica powder supplying process of supplying silica powder in a rotating mold to form a silica powder layer; an arc fusing process of fusing the silica powder layer by arc discharge generated by carbon electrodes; and a fire polishing process of throwing an arc flame toward a target surface of the silica powder layer for surface removal, wherein, in the fire polishing process, the distances from the tips of the carbon electrodes to the target surface is set to be equal.

Abstract: Provided is a method of manufacturing a vitreous silica crucible, including: an arc fusing process for fusing the silica powder molded body by using arc flames generated from the plurality of carbon electrodes, wherein the arc fusing process is performed in a state of disposing tips of at least a pair of carbon electrodes of the plurality of carbon electrodes closer to a target surface of the silica powder molded body than other carbon electrode tips, and setting distances from each of the tips of the closer carbon electrodes to the target surface, to be equal, and the arc fusing process is performed by heating and fusing the silica powder molded body while performing fire polishing, which partially removes an inner surface of the silica powder molded body by using arc flames generated by the closer carbon electrodes.

Abstract: Provided is a method for manufacturing a vitreous silica crucible and a manufacturing apparatus for the same, which can reduce the amount of bubbles and impurities of a crucible inner surface and enhance a crystallization yield of silicon single crystal. A method for manufacturing a vitreous silica crucible of the invention includes a silica powder supplying process of supplying silica powder in a rotating mold to form a silica powder layer; an arc fusing process of fusing the silica powder layer by arc discharge generated by carbon electrodes; and a fire polishing process of throwing an arc flame toward a target surface of the silica powder layer for surface removal, wherein, in the fire polishing process, the distances from the tips of the carbon electrodes to the target surface is set to be equal.

Abstract: Provided is a method of manufacturing a vitreous silica crucible, including: an arc fusing process for fusing the silica powder molded body by using arc flames generated from the plurality of carbon electrodes, wherein the arc fusing process is performed in a state of disposing tips of at least a pair of carbon electrodes of the plurality of carbon electrodes closer to a target surface of the silica powder molded body than other carbon electrode tips, and setting distances from each of the tips of the closer carbon electrodes to the target surface, to be equal, and the arc fusing process is performed by heating and fusing the silica powder molded body while performing fire polishing, which partially removes an inner surface of the silica powder molded body by using arc flames generated by the closer carbon electrodes.