Abstract: A vertical-cavity surface-emitting semiconductor laser has a substrate, a lower DBR structure portion having a plurality of layers provided on the substrate, a semiconductor buried structure portion provided over the lower DBR structure portion having at least one layer with buried therein an active layer, and an upper DBR structure portion having a plurality of layers provided over the semiconductor buried structure portion including the active layer. The active layer, at least one layer arranged over the active layer and at least one layer arranged beneath the active layer constitute an optical resonator region and each of the layers constituting the optical resonator region has an effective refractive index higher than respective effective refractive indices of other layers in the upper and lower DBR structure portions and a refractive index of the at least one layer constituting the semiconductor buried structure portion.

Abstract: A vertical-cavity surface-emitting semiconductor laser has a substrate, a lower DBR structure portion having a plurality of layers provided on the substrate, a semiconductor buried structure portion provided over the lower DBR structure portion having at least one layer with buried therein an active layer, and an upper DBR structure portion having a plurality of layers provided over the semiconductor buried structure portion comprising the active layer. The active layer, at least one layer arranged over the active layer and at least one layer arranged beneath the active layer constitute an optical resonator region and each of the layers constituting the optical resonator region has an effective refractive index higher than respective effective refractive indices of other layers in the upper and lower DBR structure portions and a refractive index of the at least one layer constituting the semiconductor buried structure portion.

Abstract: A vertical-cavity surface-emitting semiconductor laser has a substrate, a lower DBR structure portion having a plurality of layers provided on the substrate, a semiconductor buried structure portion provided over the lower DBR structure portion having at least one layer with buried therein an active layer, and an upper DBR structure portion having a plurality of layers provided over the semiconductor buried structure portion comprising the active layer. The active layer, at least one layer arranged over the active layer and at least one layer arranged beneath the active layer constitute an optical resonator region and each of the layers constituting the optical resonator region has an effective refractive index higher than respective effective refractive indices of other layers in the upper and lower DBR structure portions and a refractive index of the at least one layer constituting the semiconductor buried structure portion.

Abstract: A vertical-cavity surface-emitting semiconductor laser has first and second semiconductor multi-layered films, an active layer, and third and fourth semiconductor multi-layered films which are piled up on a GaAs substrate in that order. Furthermore, the first film is formed by piling up Al.sub.x-1 Ga.sub.1-x1 As layers (0.ltoreq.x1.ltoreq.1) and Al.sub.x2 Ga.sub.1-x2 As layers (0.ltoreq.x2.ltoreq.1) one after the other by turns. The second film is formed by piling up In.sub.x3 Ga.sub.1-x3 As.sub.y3 P.sub.1-y3 layers (0.ltoreq.x3, y3.ltoreq.1) and In.sub.x4 Ga.sub.1-x4 As.sub.y4 P.sub.1-y4 layers (0.ltoreq.x4, y4.ltoreq.1) one after the other by turns. The active layer is provided as an In.sub.x5 Ga.sub.1-x5 As.sub.y5 P.sub.1-y5 layer (0.ltoreq.x5, y5.ltoreq.1). The third film is formed by piling up In.sub.x6 Ga.sub.1-x6 As.sub.y6 P.sub.1-y6 layers (0.ltoreq.x6, y6.ltoreq.1) and In.sub.x7 Ga.sub.1-x7 As.sub.y7 P.sub.1-y7 layers (0.ltoreq.x7, y7.ltoreq.1) one after the other by turns.

Abstract: A vertical-cavity surface-emitting semiconductor laser has first and second semiconductor multi-layered films, an active layer, and third and fourth semiconductor multi-layered films which are piled up on a GaAs substrate in that order. Furthermore, the first film is formed by piling up Al.sub.x1 Ga.sub.1-x1 As layers (0.ltoreq.x1.ltoreq.1) and Al.sub.x2 Ga.sub.1-x2 As layers (0.ltoreq.x2.ltoreq.1) one after the other by turns. The second film is formed by piling up In.sub.x3 Ga.sub.1-x3 As.sub.y3 P.sub.1-y3 layers (0.ltoreq.x3, y3.ltoreq.1) and In.sub.x4 Ga.sub.1-x4 As.sub.y4 P.sub.1-y4 layers (0.ltoreq.x4, y4.ltoreq.1) one after the other by turns. The active layer is provided as an In.sub.x5 Ga.sub.1-x5 As.sub.y5 P.sub.1-y5 layer (0.ltoreq.x5, y5.ltoreq.1). The third film is formed by piling up In.sub.x6 Ga.sub.1-x6 AS.sub.y6 P.sub.1-y6 layers (0.ltoreq.x6, y6.ltoreq.1) and In.sub.x7 Ga.sub.1-x7 As.sub.y7 P.sub.1-y7 layers (0.ltoreq.x7, y7.ltoreq.1) one after the other by turns.