Abstract: A semiconductor device of embodiments includes: a semiconductor layer; a first insulating layer provided on the semiconductor layer; a first metal layer provided on the first insulating layer and containing aluminum (Al); a second metal layer provided on the first insulating layer and containing aluminum (Al); and a second insulating layer provided on the first insulating layer, provided between the first metal layer and the second metal layer, having a top surface in contact with a side surface of the first metal layer and a side surface of the second metal layer, and containing silicon (Si) and nitrogen (N).

Abstract: A semiconductor device includes a polycrystalline silicon part buried in a termination region of a silicon layer. The polycrystalline silicon part contacts the silicon layer, has a higher crystal grain density than the silicon layer, and includes a heavy metal. The silicon layer includes a drift layer located in a cell region and the termination region. The drift layer has a lower first-conductivity-type impurity concentration than a silicon substrate. The drift layer includes a same element of heavy metal as the heavy metal included in the polycrystalline silicon part.

Abstract: A semiconductor device includes: a first electrode; a semiconductor part located on the first electrode; a second electrode located in a first region on the semiconductor part; a third electrode located in a second region on the semiconductor part; an insulating member located in the semiconductor part in the first and second regions; a fourth electrode located in the insulating member in the first and second regions; a fifth electrode located in the insulating member between the first electrode and the fourth electrode in the first and second regions; and a conductive member located at least in the second region. The conductive member is connected to the third, fourth, and fifth electrodes.

Abstract: According to one embodiment, a semiconductor device includes first and second electrodes, first to third semiconductor regions, a first conductive part, a first gate electrode. The first semiconductor region is located on the first electrode and electrically connected with the first electrode. The second semiconductor region is located on the first semiconductor region. The third semiconductor region is located on a portion of the second semiconductor region. The first conductive part is located in the first semiconductor region with a first insulating part interposed. The first gate electrode is located on the first conductive part with a first inter-layer insulating part interposed. The first gate electrode faces the second semiconductor region via a first gate insulating layer. The second electrode is located on the second and third semiconductor regions and electrically connected with the second and third semiconductor regions, and the first conductive part.

Abstract: A semiconductor device includes a semiconductor layer, a first insulating film provided on the semiconductor layer, a gate wiring provided on the first insulating film, and a source electrode provided on the first insulating film. The device further includes a second insulating film provided on the gate wiring and the source electrode and including a portion sandwiched between the gate wiring and the source electrode, and a drain electrode provided below the semiconductor layer. Further, an upper surface of the first insulating film includes a first region having a first concentration of phosphorus and a second region having a second concentration of phosphorus that is higher than the first concentration. The first region is present between the semiconductor layer and the gate wiring or the source electrode, and the second region is present between the semiconductor layer and the portion of the second insulating film.

Abstract: A semiconductor device includes first and second electrodes; a semiconductor part between the first and second electrodes; a control electrode and a third electrode in a trench between the semiconductor part and the second electrode. The device further includes a first insulating part insulating the control electrode from the semiconductor part; a second insulating part insulating the third electrode from the semiconductor part; and a third insulating part insulating the third electrode from the control electrode. The second insulating part includes first and second insulating films and a portion of a third insulating film. The first insulating film is provided between the semiconductor part and the third electrode. The second insulating film is provided between the first insulating film and the third electrode. The third insulating film includes the portion between the first insulating film and the second insulating film, and another portion inside the third insulating part.

Abstract: A semiconductor device of embodiments includes: a semiconductor layer; a first insulating layer provided on the semiconductor layer; a first metal layer provided on the first insulating layer and containing aluminum (Al); a second metal layer provided on the first insulating layer and containing aluminum (Al); and a second insulating layer provided on the first insulating layer, provided between the first metal layer and the second metal layer, having a top surface in contact with a side surface of the first metal layer and a side surface of the second metal layer, and containing silicon (Si) and nitrogen (N).

Abstract: A semiconductor device includes a polycrystalline silicon part buried in a termination region of a silicon layer. The polycrystalline silicon part contacts the silicon layer, has a higher crystal grain density than the silicon layer, and includes a heavy metal. The silicon layer includes a drift layer located in a cell region and the termination region. The drift layer has a lower first-conductivity-type impurity concentration than a silicon substrate. The drift layer includes a same element of heavy metal as the heavy metal included in the polycrystalline silicon part.

Abstract: A semiconductor device includes a semiconductor part; first and second electrodes respectively on back and front surfaces of the semiconductor part; and a control electrode between the semiconductor part and the second electrode. The control electrode is provided inside a trench of the semiconductor part. The control electrode is electrically insulated from the semiconductor part by a first insulating film and electrically insulated from the second electrode by a second insulating film. The control electrode includes an insulator at a position apart from the first insulating film and the second insulating film. The semiconductor part includes a first layer of a first conductivity type provided between the first and second electrodes, the second layer of a second conductivity type provided between the first layer and the second electrode and the third layer of the first conductivity type selectively provided between the second layer and the second electrode.

Abstract: A method for manufacturing a semiconductor device includes forming a trench in a first semiconductor layer of a first conductivity type; filling a first insulating film into the trench; etching the first insulating film to cause an upper surface of the first insulating film to recede lower than an opening of the trench and to expose a sidewall of an upper portion of the trench from under the first insulating film; forming a second-conductivity-type semiconductor region in a region of the first semiconductor layer next to the upper portion of the trench by implanting a second-conductivity-type impurity through the sidewall of the upper portion of the trench into the first semiconductor layer and by diffusing the second-conductivity-type impurity; and forming a gate electrode on the first insulating film in the upper portion of the trench after the forming of the second-conductivity-type semiconductor region.

Abstract: A semiconductor device includes: a first electrode; a first semiconductor layer of first conductivity type provided on the first electrode; a first semiconductor region of second conductivity type provided on the first semiconductor layer; a second semiconductor region of first conductivity type provided on the first semiconductor region; a second electrode provided in a first trench, the second electrode facing the first semiconductor region with a first insulating film interposed between the second electrode and the first semiconductor region and the first trench reaching the first semiconductor layer from above the first semiconductor region; a third electrode provided in a second trench, the third electrode facing the first semiconductor region with a second insulating film interposed between the third electrode and the first semiconductor region and the second trench reaching the first semiconductor layer from above the first semiconductor region; a fourth electrode reaching the first semiconductor regio

Abstract: A semiconductor device includes a semiconductor part; first and second electrodes respectively on back and front surfaces of the semiconductor part; and a control electrode between the semiconductor part and the second electrode. The control electrode is provided inside a trench of the semiconductor part. The control electrode is electrically insulated from the semiconductor part by a first insulating film and electrically insulated from the second electrode by a second insulating film. The control electrode includes an insulator at a position apart from the first insulating film and the second insulating film. The semiconductor part includes a first layer of a first conductivity type provided between the first and second electrodes, the second layer of a second conductivity type provided between the first layer and the second electrode and the third layer of the first conductivity type selectively provided between the second layer and the second electrode.

Abstract: A semiconductor device includes first and second electrodes; a semiconductor part between the first and second electrodes; a control electrode and a third electrode in a trench between the semiconductor part and the second electrode. The device further includes a first insulating part insulating the control electrode from the semiconductor part; a second insulating part insulating the third electrode from the semiconductor part; and a third insulating part insulating the third electrode from the control electrode. The second insulating part includes first and second insulating films and a portion of a third insulating film. The first insulating film is provided between the semiconductor part and the third electrode. The second insulating film is provided between the first insulating film and the third electrode. The third insulating film includes the portion between the first insulating film and the second insulating film, and another portion inside the third insulating part.

Abstract: A semiconductor device includes a semiconductor part; first and second electrodes respectively on back and front surfaces of the semiconductor part; and a control electrode between the semiconductor part and the second electrode. The control electrode is provided inside a trench of the semiconductor part. The control electrode is electrically insulated from the semiconductor part by a first insulating film and electrically insulated from the second electrode by a second insulating film. The control electrode includes an insulator at a position apart from the first insulating film and the second insulating film. The semiconductor part includes a first layer of a first conductivity type provided between the first and second electrodes, the second layer of a second conductivity type provided between the first layer and the second electrode and the third layer of the first conductivity type selectively provided between the second layer and the second electrode.

Abstract: A semiconductor device includes a first-conductive-type first semiconductor layer having a first surface and an opposing second surface. A first-conductive-type second semiconductor layer is on the first surface, and a second-conductive-type third semiconductor layer is on the second semiconductor layer. A first-conductive-type fourth semiconductor layer is on the third semiconductor layer. A first electrode is provided on the second semiconductor layer, the third semiconductor layer, and the fourth semiconductor layer via an insulating film. A second electrode is on the fourth semiconductor layer. A third electrode is separated from the second electrode in a second direction. The third electrode has a width in the second direction, and the width of the third electrode narrows from a first depth to a second depth. An angle of the side surface of the second semiconductor layer is greater than or equal to 90 degrees.

Abstract: A semiconductor device includes a first-conductive-type first semiconductor layer having a first surface and an opposing second surface. A first-conductive-type second semiconductor layer is on the first surface, and a second-conductive-type third semiconductor layer is on the second semiconductor layer. A first-conductive-type fourth semiconductor layer is on the third semiconductor layer. A first electrode is provided on the second semiconductor layer, the third semiconductor layer, and the fourth semiconductor layer via an insulating film. A second electrode is on the fourth semiconductor layer. A third electrode is separated from the second electrode in a second direction. The third electrode has a width in the second direction, and the width of the third electrode narrows from a first depth to a second depth. An angle of the side surface of the second semiconductor layer is greater than or equal to 90 degrees.

Abstract: In general, according to one embodiment, a semiconductor device includes a first electrode, a first and a second semiconductor layer of a first conductivity type, a third semiconductor layer of a second conductivity type, a fourth semiconductor layer of the first conductivity type in this order. A device region includes a gate electrode inside a first trench. A second trench having a ring-shaped structure forms a first region penetrating through the fourth and third semiconductor layers to the second semiconductor layer and including the device region inside and a second region surrounding the first region outside. A first opening is provided between adjacent ones of the first trenches. A second opening having a wider width than the first opening is provided in the first region outside the device region. A second electrode is electrically connected to the third and fourth semiconductor layers through the first and second openings.

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, first trenches, a second trench, an insulating film, a gate electrode, a first main electrode, a second main electrode, a channel stopper layer and a channel stopper electrode. The second semiconductor layer of the first conductivity type is provided on the first semiconductor layer. The third semiconductor layer of a second conductivity type is provided on the second semiconductor layer. The fourth semiconductor layer of the first conductivity type is provided on the third semiconductor layer. The gate electrode is provided in the first trenches via the insulating film. The first main electrode is provided on the first semiconductor layer. The second main electrode is provided to contact the element part. The channel stopper electrode is provided on the termination part.

Abstract: In general, according to one embodiment, a semiconductor device includes a first electrode, a first and a second semiconductor layer of a first conductivity type, a third semiconductor layer of a second conductivity type, a fourth semiconductor layer of the first conductivity type in this order. A device region includes a gate electrode inside a first trench. A second trench having a ring-shaped structure forms a first region penetrating through the fourth and third semiconductor layers to the second semiconductor layer and including the device region inside and a second region surrounding the first region outside. A first opening is provided between adjacent ones of the first trenches. A second opening having a wider width than the first opening is provided in the first region outside the device region. A second electrode is electrically connected to the third and fourth semiconductor layers through the first and second openings.

Abstract: In general, according to one embodiment, a semiconductor device includes a first electrode, a first and a second semiconductor layer of a first conductivity type, a third semiconductor layer of a second conductivity type, a fourth semiconductor layer of the first conductivity type in this order. A device region includes a gate electrode inside a first trench. A second trench having a ring-shaped structure forms a first region penetrating through the fourth and third semiconductor layers to the second semiconductor layer and including the device region inside and a second region surrounding the first region outside. A first opening is provided between adjacent ones of the first trenches. A second opening having a wider width than the first opening is provided in the first region outside the device region. A second electrode is electrically connected to the third and fourth semiconductor layers through the first and second openings.