Abstract: Provided is a soft X-ray static electricity removal apparatus that has achieved an increase in the amount of ionized air discharged, with a simple structure. A soft X-ray static electricity removal apparatus (1) includes a soft X-ray generation device (90), a container (10), a soft X-ray shielding sheet (20), and an insulating layer (50). The soft X-ray generation device generates soft X-rays (92). The container (10) has an outlet (12) from which ionized air (100) that has been ionized with the soft X-rays flows out. The soft X-ray shielding sheet (20) is used at the outlet of the container and includes a first outer sheet (30), an interlayer sheet (34), and a second outer sheet (40) which are formed of a material opaque to the soft X-rays.

Abstract: Provided is a soft X-ray static electricity removal apparatus that has achieved an increase in the amount of ionized air discharged, with a simple structure. A soft X-ray static electricity removal apparatus (1) includes a soft X-ray generation device (90), a container (10), a soft X-ray shielding sheet (20), and an insulating layer (50). The soft X-ray generation device generates soft X-rays (92). The container (10) has an outlet (12) from which ionized air (100) that has been ionized with the soft X-rays flows out. The soft X-ray shielding sheet (20) is used at the outlet of the container and includes a first outer sheet (30), an interlayer sheet (34), and a second outer sheet (40) which are formed of a material opaque to the soft X-rays.

Abstract: An apparatus for manufacturing semiconductors is provided by which adhesion of moisture to a wafer in an EFEM is easily prevented. The apparatus 1 for manufacturing the semiconductors comprises processing equipment 30 that processes a wafer 90, a FOUP 40 that supplies the wafer 90 and that houses the wafer 90 that has been processed, an EFEM 10 that transfers the wafer 90 between the FOUP 40 and the processing equipment 30, a fan and filter unit 20 that sends an airflow 72 from above to the EFEM 10, an ultrasonic oscillator 52 that generates high-frequency power, and a vibrator 54 that generates ultrasonic waves 80 by using the high-frequency power that is generated by the ultrasonic oscillator 52 and that applies the ultrasonic waves 80 to the wafer 90 that is transported in the EFEM 10 and that has been processed.

Abstract: In a semiconductor-fabrication equipment of a minienvironment system, ambient air is prevented from entering a gap between an opening of the semiconductor-fabrication equipment and a wafer gateway of a hermetic container to prevent dust entrained in the ambient air from adhering to wafers in the hermetic container.

Abstract: In a semiconductor-fabrication equipment of a minienvironment system, ambient air is prevented from entering a gap between an opening of the semiconductor-fabrication equipment and a wafer gateway of a hermetic container to prevent dust entrained in the ambient air from adhering to wafers in the hermetic container.