Patents by Inventor Koutaro Endo
Koutaro Endo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7033731Abstract: Disclosed is a novel multilayered body for photo-lithographic patterning of a photoresist layer from which a patterned resist layer having an excellent cross sectional profile can be obtained when the multilayered structure comprises, on the surface of a substrate, an underlying water-insoluble anti-reflection film and a negative-working photoresist layer of a specific photoresist composition comprising: (A) 100 parts by weight of an alkali-soluble resin; (B) from 0.5 to 20 parts by weight of an onium salt compound capable of releasing an acid by irradiation with actinic rays; and (C) from 3 to 50 parts by weight of a glycoluril compound substituted by at least one hydroxyalkyl group or alkoxyalkyl group at the N-position.Type: GrantFiled: July 29, 2004Date of Patent: April 25, 2006Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Toshikazu Tachikawa, Fumitake Kaneko, Naotaka Kubota, Miwa Miyairi, Takako Hirosaki, Koutaro Endo
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Publication number: 20050203262Abstract: Fluorinated polymers useful in photoresist compositions and associated processes for microlithography are described. These polymers and photoresists have a fluoroalcohol functional group that simultaneously imparts high ultraviolet (UV) transparency and developability in basic media. The polymers also have a repeat unit derived from a C1-C25 alkyl hydroxymethylacrylate comonomer, e.g., tert-butyl hydroxymethylacrylate, or a C5-C50 polycyclic alkyl acrylate in which the polycyclic group contains a hydroxy group, e.g., hydroxyadamantyl acrylate. The materials of this invention have high UV tansparency, particularly at short wavelengths, e.g., 193 nm and 157 nm, which makes them highly useful for lithography at these short wavelengths.Type: ApplicationFiled: July 23, 2003Publication date: September 15, 2005Inventors: Andrew Feiring, Frank Schadt, Toshiyuki Ogata, Koutaro Endo
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Publication number: 20050123854Abstract: A positive resist composition includes (A) an alkali-soluble polysiloxane resin, (B) an acid generator composed of a compound which generates an acid upon irradiation of active light or radiant ray, and (C) a compound in which at least one hydrogen atom of phenolic hydroxyl group or carboxyl group is substituted with an acid-decomposable group. This positive resist composition is useful for processes using F2 excimer laser (157 nm), extreme-ultraviolet rays (EUV, vacuum ultraviolet rays; 13 nm) and other light sources having wavelengths equal to or shorter than that of KrF excimer laser, and has high definition and can form resist patterns with good sectional shapes. A base material carrying a layer of the positive resist composition is also useful.Type: ApplicationFiled: January 18, 2005Publication date: June 9, 2005Inventors: Toshiyuki Ogata, Koutaro Endo, Hiroshi Komano
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Patent number: 6864036Abstract: Disclosed is a novel negative-working chemical-amplification photoresist composition comprising (A) an alkali-soluble resin, (B) an acid-generating agent and (C) a crosslinking agent, of which the component (B) is an onium salt compound selected from the group consisting of iodonium salt compounds and sulfonium salt compounds, having a specific fluoroalkyl sulfonate ion as the anionic moiety and the component (C) is a specific ethyleneurea compound substituted for at least one nitrogen atom by a hydroxymethyl or alkoxymethyl group. The photoresist composition is particularly suitable for the formation of a photoresist layer on a substrate surface provided with an undercoating of a water-insoluble organic anti-reflection film exhibiting excellent pattern resolution and orthogonal cross sectional profile of the patterned resist layer with a good temperature latitude in the post-exposure baking treatment for latent image formation.Type: GrantFiled: January 24, 2002Date of Patent: March 8, 2005Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Toshikazu Tachikawa, Fumitake Kaneko, Naotaka Kubota, Miwa Miyairi, Takako Hirosaki, Koutaro Endo
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Publication number: 20050008972Abstract: Disclosed is a novel multilayered body for photolithographic patterning of a photoresist layer from which a patterned resist layer having an excellent cross sectional profile can be obtained when the multilayered structure comprises, on the surface of a substrate, an underlying water-insoluble anti-reflection film and a negative-working photoresist layer of a specific photoresist composition comprising: (A) 100 parts by weight of an alkali-soluble resin; (B) from 0.5 to 20 parts by weight of an onium salt compound capable of releasing an acid by irradiation with actinic rays; and (C) from 3 to 50 parts by weight of a glycoluril compound substituted by at least one hydroxyalkyl group or alkoxyalkyl group at the N-position.Type: ApplicationFiled: July 29, 2004Publication date: January 13, 2005Inventors: Toshikazu Tachikawa, Fumitake Kaneko, Naotaka Kubota, Miwa Miyairi, Takako Hirosaki, Koutaro Endo
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Patent number: 6787284Abstract: A positive resist composition includes (A) an alkali-soluble polysiloxane resin, (B) an acid generator composed of a compound which generates an acid upon irradiation of active light or radiant ray, and (C) a compound in which at least one hydrogen atom of phenolic hydroxyl group or carboxyl group is substituted with an acid-decomposable group. This positive resist composition is useful for processes using F2 excimer laser (157 nm), extreme-ultraviolet rays (EUV, vacuum ultraviolet rays; 13 nm) and other light sources having wavelengths equal to or shorter than that of KrF excimer laser, and has high definition and can form resist patterns with good sectional shapes. A base material carrying a layer of the positive resist composition is also useful.Type: GrantFiled: August 7, 2001Date of Patent: September 7, 2004Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Toshiyuki Ogata, Koutaro Endo, Hiroshi Komano
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Publication number: 20040152860Abstract: A positive resist composition includes (A) an alkali-soluble polysiloxane resin, (B) an acid generator composed of a compound which generates an acid upon irradiation of active light or radiant ray, and (C) a compound in which at least one hydrogen atom of phenolic hydroxyl group or carboxyl group is substituted with an acid-decomposable group. This positive resist composition is useful for processes using F2 excimer laser (157 nm), extreme-ultraviolet rays (EUV, vacuum ultraviolet rays; 13 nm) and other light sources having wavelengths equal to or shorter than that of KrF excimer laser, and has high definition and can form resist patterns with good sectional shapes. A base material carrying a layer of the positive resist composition is also useful.Type: ApplicationFiled: December 31, 2003Publication date: August 5, 2004Applicant: TOKYO OHKA KOGYO CO., LTD.Inventors: Toshiyuki Ogata, Koutaro Endo, Hiroshi Komano
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Publication number: 20020146645Abstract: Disclosed is a novel multilayered body for photolitho-graphic patterning of a photoresist layer from which a patterned resist layer having an excellent cross sectional profile can be obtained when the multilayered structure comprises, on the surface of a substrate, an underlying water-insoluble anti-reflection film and a negative-working photoresist layer of a specific photoresist composition comprising:Type: ApplicationFiled: June 4, 2002Publication date: October 10, 2002Inventors: Toshikazu Tachikawa, Fumitake Kaneko, Naotaka Kubota, Miwa Miyairi, Takako Hirosaki, Koutaro Endo
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Patent number: 6455228Abstract: Disclosed is a novel multilayered body for photolithographic patterning of a photoresist layer from which a patterned resist layer having an excellent cross sectional profile can be obtained when the multilayered structure comprises, on the surface of a substrate, an underlying water-insoluble anti-reflection film and a negative-working photoresist layer of a specific photoresist composition comprising: (A) 100 parts by weight of an alkali-soluble resin; (B) from 0.5 to 20 parts by weight of an onium salt compound capable of releasing an acid by irradiation with actinic rays; and (C) from 3 to 50 parts by weight of a glycoluril compound substituted by at least one hydroxyalkyl group or alkoxyalkyl group at the N-position.Type: GrantFiled: August 18, 2000Date of Patent: September 24, 2002Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Toshikazu Tachikawa, Fumitake Kaneko, Naotaka Kubota, Miwa Miyairi, Takako Hirosaki, Koutaro Endo
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Patent number: 6406829Abstract: Disclosed is a novel negative-working chemical-amplification photoresist composition comprising (A) an alkali-soluble resin, (B) an acid-generating agent and (C) a crosslinking agent, of which the component (B) is an onium salt compound having a specific fluoroalkyl sulfonate ion as the anionic moiety and the component (C) is a specific ethyleneurea compound substituted for at least one nitrogen atom by a hydroxymethyl or alkoxymethyl group. The photoresist composition is particularly suitable for the formation of a photoresist layer on a substrate surface provided with an undercoating of a water-insoluble organic anti-reflection film exhibiting excellent pattern resolution and orthogonal cross sectional profile of the patterned resist layer with a good temperature latitude in the post-exposure baking treatment for latent image formation.Type: GrantFiled: August 15, 2000Date of Patent: June 18, 2002Assignee: Tokyo Ohka Kogyo Co., Ltd.Inventors: Toshikazu Tachikawa, Fumitake Kaneko, Naotaka Kubota, Miwa Miyairi, Takako Hirosaki, Koutaro Endo
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Publication number: 20020061467Abstract: Disclosed is a novel negative-working chemical-amplification photoresist composition comprising (A) an alkali-soluble resin, (B) an acid-generating agent and (C) a crosslinking agent, of which the component (B) is an onium salt compound selected from the group consisting of iodonium salt compounds and sulfonium salt compounds, having a specific fluoroalkyl sulfonate ion as the anionic moiety and the component (C) is a specific ethyleneurea compound substituted for at least one nitrogen atom by a hydroxymethyl or alkoxymethyl group. The photoresist composition is particularly suitable for the formation of a photoresist layer on a substrate surface provided with an undercoating of a water-insoluble organic anti-reflection film exhibiting excellent pattern resolution and orthogonal cross sectional profile of the patterned resist layer with a good temperature latitude in the post-exposure baking treatment for latent image formation.Type: ApplicationFiled: January 24, 2002Publication date: May 23, 2002Inventors: Toshikazu Tachikawa, Fumitake Kaneko, Naotaka Kubota, Miwa Miyairi, Takako Hirosaki, Koutaro Endo
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Publication number: 20020025495Abstract: A positive resist composition includes (A) an alkali-soluble polysiloxane resin, (B) an acid generator composed of a compound which generates an acid upon irradiation of active light or radiant ray, and (C) a compound in which at least one hydrogen atom of phenolic hydroxyl group or carboxyl group is substituted with an acid-decomposable group. This positive resist composition is useful for processes using F2 excimer laser (157 nm), extreme-ultraviolet rays (EUV, vacuum ultraviolet rays; 13 nm) and other light sources having wavelengths equal to or shorter than that of KrF excimer laser, and has high definition and can form resist patterns with good sectional shapes. A base material carrying a layer of the positive resist composition is also useful.Type: ApplicationFiled: August 7, 2001Publication date: February 28, 2002Applicant: TOKYO OHKA KOGYO CO., LTDInventors: Toshiyuki Ogata, Koutaro Endo, Hiroshi Komano
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Patent number: 5326135Abstract: A vehicle wheel splash attenuator has a deflection-suppressing member designed to be installed in a tire housing so as to face a tire and define a space of more than 15 mm between itself and the inner face of the tire housing. The deflection-suppressing member has strands formed therein which define a plurality of apertures through which muddy water flung by the tire is passed. The deflection-suppressing member thus suppresses the deflection of the muddy water impinging upon the tire housing. The opening ratio of the apertures is within a range of 25 to 55%, the diameter of the apertures elongated circumferentially of the tire is within a range of 30 to 150 mm, and the width of those strands defining the apertures and facing the tire is within a range of 2 to 15 mm. The cross-section of at least those strands projected toward the tire is shaped into a triangle whose apex is directed toward the tire and whose bottom is directed toward the tire housing.Type: GrantFiled: August 17, 1992Date of Patent: July 5, 1994Assignee: Bridgestone CorporationInventors: Takeshi Nakayama, Itaru Kurimoto, Koutaro Endo