Abstract: A lower-layer film to which a fluorine-doped polymer is added is formed on a film to be processed. The lower-layer film is baked. An intermediate film is formed on the lower-layer film. A resist film is formed on the intermediate film. The resist film is baked. A resist protection film is formed. The resist film is immersion-exposed. The resist film is developed to form a resist pattern.

Abstract: A substrate processing method, includes: forming a resist film above a substrate; exposing the resist film; developing the resist film using a developing fluid after the exposing of the resist film; cleaning the resist film using a rinsing fluid after the developing of the resist film; and drying the resist film in a processing chamber after the cleaning of the resist film, inside the processing chamber being an atmosphere including an ion, the atmosphere including the ion being caused by introducing a gas including the ion produced externally to the processing chamber into the processing chamber.

Abstract: A lower-layer film to which a fluorine-doped polymer is added is formed on a film to be processed. The lower-layer film is baked. An intermediate film is formed on the lower-layer film. A resist film is formed on the intermediate film. The resist film is baked. A resist protection film is formed. The resist film is immersion-exposed. The resist film is developed to form a resist pattern.

Abstract: The present application provides a method for manufacturing a semiconductor device, the method including forming a resist film on a substrate, forming a protective film on the resist film, exposing the resist film with a first liquid interposed between the protective film and a lens for exposure, removing the protective film using an oxidative second liquid after exposing the resist film, and developing the resist film to form a resist pattern after removing the protective film.

Abstract: A pattern forming method comprising forming a first layer on a semiconductor substrate, forming a resist layer on the first layer, patterning the resist layer to form a first patterning layer having several patterns, slimming or thickening a pattern width of the first patterning layer, forming a second patterning layer between patterns of the first patterning layer, and patterning the first patterning layer using the second patterning layer as a mask.