Abstract: Provided is a work processing apparatus configured so that limitations on the contents of processing for a work piece or the type of work piece can be reduced and processing for a wider range of processing contents and work piece can be performed. In a work processing apparatus 100, a work table 101 is, through a table displacement mechanism 103, supported on a rotation base 120 to be rotatably driven by a table rotary drive motor 125, and a weight holding tool 110 is supported on the rotation base 120 through a weight displacement mechanism 114. The table displacement mechanism 103 includes a rack-and-pinion mechanism configured to displace the work table 101 in an X-axis direction as viewed in the figure. At the table displacement mechanism 103, a power inputter 108 configured to input drive force from a table displacement mechanism drive apparatus 130 is provided.

Abstract: A film with small hysteresis and high voltage resistance is obtained by reducing the carbon content in a gate insulating film on a SiC substrate. Specifically, the carbon content in the gate insulating film is set to 1×1020 atoms/cm3 or less. For this, using a plasma processing apparatus, a silicon oxide film is formed on the SiC substrate and then the formed silicon oxide film is reformed by exposure to radicals containing nitrogen atoms. Thus, the gate insulating film excellent in electrical properties is obtained.

Abstract: A film with small hysteresis and high voltage resistance is obtained by reducing the carbon content in a gate insulating film on a SiC substrate. Specifically, the carbon content in the gate insulating film is set to 1×1020 atoms/cm3 or less. For this, using a plasma processing apparatus, a silicon oxide film is formed on the SiC substrate and then the formed silicon oxide film is reformed by exposure to radicals containing nitrogen atoms. Thus, the gate insulating film excellent in electrical properties is obtained.

Abstract: A flip-flop circuit comprises two basic flip-flop circuits, four field effect transistors, and four amplifiers. The two basic flip-flop circuits respectively composed of a first and a second inverter circuits, and an output terminal of the first inverter circuit is connected to an input terminal of the second inverter circuit and an output terminal of the second inverter circuit is connected to the input terminal of the first inverter circuit. The field effect transistors have sources respectively connected to input terminals of the two basic flip-flop circuits, and gates to which clock pulses and inverse clock pulses are applied. The amplifiers respectively composed of an inverter circuit are connected to output terminals of the two basic flip-flop circuits.