Abstract: A substrate processing apparatus includes a processing tub, a liquid recovery unit, a liquid recovery unit drain line, a storage, a first and a second liquid supply lines, a discharge line, a first and a second liquid flow rate controllers. The liquid recovery unit receives a processing liquid overflown from the processing tub. The liquid recovery unit drain line drains the processing liquid from the liquid recovery unit. The first and the second liquid supply lines supply a first and a second liquids, respectively. The cleaning liquid contains the first liquid and the second liquid, and removes a precipitate from the processing liquid. The discharge line discharges the cleaning liquid, the first liquid or the second liquid toward the liquid recovery unit. The first and the second liquid flow rate controllers are provided at the first and the second liquid supply lines, and adjust flow rates thereof, respectively.

Abstract: There is provided a substrate processing apparatus including: a processing part configured to process a substrate with a processing liquid; and a processing liquid generation part configured to generate the processing liquid supplied to the processing part. The processing liquid generation part includes: a reservoir configured to store the processing liquid; a circulation line through which the processing liquid stored in the reservoir is circulated; a heater configured to heat the processing liquid; and a nozzle provided at a downstream side of the circulation line and has at least one ejection port formed to eject the processing liquid heated by the heater from above a liquid level of the processing liquid stored in the reservoir.

Abstract: A substrate processing system includes: a batch-type processing part that collectively processes a lot including substrates arranged at a first pitch; a single-substrate-type processing part that processes the substrates of the lot one by one; and an interface part that delivers the substrates between the batch-type processing part and the single-substrate-type processing part. The batch-type processing part includes a processing bath that stores a processing solution having a lump shape or a mist shape, a first holder that holds the substrates arranged at the first pitch, and a second holder that receives the substrates arranged at a second pitch from the first holder in the processing solution. The interface part includes a transfer part that transfers the substrates held separately by the first and second holders in the processing solution, from the batch-type processing part to the single-substrate-type processing part.

Abstract: A substrate processing apparatus includes a liquid processing tank, a movement mechanism, an ejector, and a controller. The liquid processing tank stores a processing liquid. The movement mechanism moves a plurality of substrates immersed in the liquid processing tank to a position above the liquid surface of the processing liquid. The ejector ejects a vapor of an organic solvent toward portions of the plurality of substrates that are exposed from the liquid surface. The controller changes an ejection flow rate of the vapor ejected by the ejector as the plurality of substrates are moved up.

Abstract: A substrate processing system includes: a batch-type processing part that collectively processes a lot including substrates arranged at a first pitch; a single-substrate-type processing part that processes the substrates of the lot one by one; and an interface part that delivers the substrates between the batch-type processing part and the single-substrate-type processing part. The batch-type processing part includes a processing bath that stores a processing solution having a lump shape or a mist shape, a first holder that holds the substrates arranged at the first pitch, and a second holder that receives the substrates arranged at a second pitch from the first holder in the processing solution. The interface part includes a transfer part that transfers the substrates held separately by the first and second holders in the processing solution, from the batch-type processing part to the single-substrate-type processing part.

Abstract: A substrate processing apparatus includes a processing tank, a reservoir, a remover, a mixer, and a return path. Etching is performed on a substrate in the processing tank by immersing the substrate in a processing liquid containing a chemical liquid and silicon. The reservoir recovers and stores the processing liquid discharged from the processing tank. The remover recovers a portion of the processing liquid discharged from the processing tank, and removes silicon from the recovered processing liquid. The mixer mixes the processing liquid stored in the reservoir with the processing liquid from which silicon has been removed by the remover. The processing liquid mixed by the mixer is returned to the processing tank through a return path.

Abstract: A substrate processing apparatus includes: a cassette block configured to mount a cassette that accommodates a substrate; a processing block configured to process the substrate; a relay block configured to relay the substrate between the cassette block and the processing block; and a controller. The processing block includes a processing module that performs a removal process of removing a part of the substrate. The relay block includes a weight measuring unit that measures a weight of the substrate before or after being processed by the processing block. The controller includes a removal amount determination unit that calculates a weight difference of the substrate before and after being processed by the processing block using the measurement result of the weight measuring unit and determines whether a removal amount by the removal process is within a permissible range.

Abstract: A substrate processing apparatus includes a processing tank, a holder, an organic solvent supply, a drainage port, a gas supply, and an exhaust port. The processing tank stores an aqueous layer. The holder holds a substrate. The organic solvent supply supplies an organic solvent onto the aqueous layer to form a liquid layer of the organic solvent. The drainage port discharges the aqueous layer from a bottom wall of the processing tank and causes the liquid layer of the organic solvent to descend from above the substrate to below the substrate. The gas supply supplies a gas of a water repellent agent to the liquid layer from above the processing tank while the liquid layer descends. The exhaust port is exposed on a side wall of the processing tank by the descending of the liquid layer and discharges the gas of the water repellent gas.

Abstract: A substrate processing apparatus includes a processing tub, a liquid recovery unit, a liquid recovery unit drain line, a storage, a first and a second liquid supply lines, a discharge line, a first and a second liquid flow rate controllers. The liquid recovery unit receives a processing liquid overflown from the processing tub. The liquid recovery unit drain line drains the processing liquid from the liquid recovery unit. The first and the second liquid supply lines supply a first and a second liquids, respectively. The cleaning liquid contains the first liquid and the second liquid, and removes a precipitate from the processing liquid. The discharge line discharges the cleaning liquid, the first liquid or the second liquid toward the liquid recovery unit. The first and the second liquid flow rate controllers are provided at the first and the second liquid supply lines, and adjust flow rates thereof, respectively.

Abstract: A substrate processing apparatus includes a processing tub, a storage, a liquid recovery unit, a storage drain line and a liquid recovery unit drain line. The processing tub is allowed to accommodate therein multiple substrates, and configured to store therein a processing liquid. The storage is connected to the processing tub, and configured to store therein the processing liquid drained from the processing tub. The liquid recovery unit is configured to receive the processing liquid overflown from the processing tub. The storage drain line is configured to drain a liquid stored in the storage. The liquid recovery unit drain line is configured to drain a liquid received from the liquid recovery unit to an external drain line provided at an outside.

Abstract: A substrate processing system includes: a batch-type processing part that collectively processes a lot including substrates arranged at a first pitch; a single-substrate-type processing part that processes the substrates of the lot one by one; and an interface part that delivers the substrates between the batch-type processing part and the single-substrate-type processing part. The batch-type processing part includes a processing bath that stores a processing solution having a lump shape or a mist shape, a first holder that holds the substrates arranged at the first pitch, and a second holder that receives the substrates arranged at a second pitch from the first holder in the processing solution. The interface part includes a transfer part that transfers the substrates held separately by the first and second holders in the processing solution, from the batch-type processing part to the single-substrate-type processing part.

Abstract: A substrate processing system includes: a loading/unloading part into/from which a cassette that accommodates a plurality of substrates is loaded/unloaded; a batch-type processing part configured to collectively process a lot including the plurality of substrates; a single-substrate-type processing part configured to the plurality of substrates of the lot one by one; and an interface part configured to deliver the plurality of substrates between the batch-type processing part and the single-substrate-type processing part, wherein the loading/unloading part, the single-substrate-type processing part, the interface part, and the batch-type processing part are arranged in this order, and wherein the interface part comprises a lot formation part configured to form the lot, and a transfer part configured to transfer the plurality of substrates from the single-substrate-type processing part to the lot formation part, and configured to transfer the plurality of substrates from the batch-type processing part to the s

Abstract: A substrate processing apparatus includes a liquid processing tank, a movement mechanism, an ejector, and a controller. The liquid processing tank stores a processing liquid. The movement mechanism moves a plurality of substrates immersed in the liquid processing tank to a position above the liquid surface of the processing liquid. The ejector ejects a vapor of an organic solvent toward portions of the plurality of substrates that are exposed from the liquid surface. The controller changes an ejection flow rate of the vapor ejected by the ejector as the plurality of substrates are moved up.

Abstract: There is provided a substrate processing apparatus including: a processing part configured to process a substrate with a processing liquid; and a processing liquid generation part configured to generate the processing liquid supplied to the processing part. The processing liquid generation part includes: a reservoir configured to store the processing liquid; a circulation line through which the processing liquid stored in the reservoir is circulated; a heater configured to heat the processing liquid; and a nozzle provided at a downstream side of the circulation line and has at least one ejection port formed to eject the processing liquid heated by the heater from above a liquid level of the processing liquid stored in the reservoir.

Abstract: A substrate processing apparatus includes a processing tank, a reservoir, a remover, a mixer, and a return path. Etching is performed on a substrate in the processing tank by immersing the substrate in a processing liquid containing a chemical liquid and silicon. The reservoir recovers and stores the processing liquid discharged from the processing tank. The remover recovers a portion of the processing liquid discharged from the processing tank, and removes silicon from the recovered processing liquid. The mixer mixes the processing liquid stored in the reservoir with the processing liquid from which silicon has been removed by the remover. The processing liquid mixed by the mixer is returned to the processing tank through a return path.

Abstract: A thermal catalytic layer is formed on the inner surface of a processing container and heated. Thus, when a sublimate sublimated from a coating film on a wafer W and received within the processing container reaches the vicinity of the thermal catalytic layer, the sublimate is decomposed and removed by the thermal activation of the thermal catalytic layer. In removing a sublimate attached to a light transmission window, a cleaning substrate formed with the thermal catalytic layer on the surface thereof is carried into the processing container and caused to approach the light transmission window. Thereafter, the cleaning substrate is heated so that the sublimate attached to the surface of the light transmission window is removed.

Abstract: Disclosed is an exhaust system for discharging a fluid which is supplied into a hermetically closed container 54 for containing a semiconductor wafer W, a substrate to be supplied in the container 54 and subjected to a process. The exhaust system comprises an outer exhaust pipe 71 which is connected to the hermetically closed container via an exhaust connecting pipe 68 and has closed top and bottom ends, a downstream guide passage 201 which is provided in the outer exhaust pipe 71 and adapted to downwardly guide an exhaust fluid flowing through the outer exhaust pipe 71, and an upstream guide passage 202 which is adapted to upwardly guide the exhaust fluid having flowed through the downstream guide passage 201 as well as to cause foreign matter or the like in the exhaust fluid to be settled by gravity. The exhaust fluid having flowed through the upstream guide passage 202 is discharged from a discharging passage 203 to the outside.

Abstract: A resist coating unit includes a coater cup surrounding a wafer W held by a spin chuck and an air supply mechanism for blowing an air into the coater cup. The air supply mechanism includes a hollow frame having a first open portion formed in the vertical wall, an air blowing device for blowing an air into the hollow frame, and a filter chamber unit into which the air within the frame is introduced. The filter chamber unit includes a first air introducing chamber having a heater arranged therein, a second air introducing chamber, an air stream control mechanism, and a filter unit. The air flowing within the frame flows into the first air introducing chamber through the first open portion so as to be uniformly heated by the heater and, then, is introduced into the second air introducing chamber. Then, the air uniformly heated by the heater is blown into the coater cup through the air stream control mechanism and the filter unit.

Abstract: A resist coating unit includes a coater cup surrounding a wafer W held by a spin chuck and an air supply mechanism for blowing an air into the coater cup. The air supply mechanism includes a hollow frame having a first open portion formed in the vertical wall, an air blowing device for blowing an air into the hollow frame, and a filter chamber unit into which the air within the frame is introduced. The filter chamber unit includes a first air introducing chamber having a heater arranged therein, a second air introducing chamber, an air stream control mechanism, and a filter unit. The air flowing within the frame flows into the first air introducing chamber through the first open portion so as to be uniformly heated by the heater and, then, is introduced into the second air introducing chamber. Then, the air uniformly heated by the heater is blown into the coater cup through the air stream control mechanism and the filter unit.

Abstract: Outside air taken in from the outside is cooled to a predetermined temperature by a cooler, and the air cooled by the cooler flows through a low temperature side flow path in a heat exchanger, whereas outside air flows through a high temperature side flow path in the heat exchanger, which allows heat to be exchanged between the cooled air and the outside air. The air, flowing through the low temperature side flow path in the heat exchanger and warmed up by the outside air flowing through the high temperature side flow path, is warmed and humidified by a warmer and a humidifier, and the air with predetermined temperature and humidity is supplied to a coating processing unit. Moreover, the outside air, flowing through the high temperature side flow path in the heat exchanger and cooled by the air flowing through the low temperature side flow path, is warmed by a warmer, and the air with a predetermined temperature is supplied to a developing processing unit.