Abstract: A device for detecting radiation direction is an integrated circuit that includes a first and second phototransistor positioned anti-parallel with respect to each other and a reference phototransistor. The device does not require impinging radiation to be mechanically aligned using pinholes, apertures or mechanical slits. The first phototransistor detects the direction of the radiation in an x-plane, and the second phototransistor detects the direction of the radiation in the y-plane. The first and second phototransistors have two differential pairs. The P type base regions are formed in the <111> plane of the silicon to form opposing sidewalls for receiving radiation signals from a radiation source. A current is induced in the PN junction of each phototransistor, thereby causing a current output on the emitters of the phototransistors. The differential currents represent rectangular coordinates describing the direction of the radiation detected on the <111> plane.

Abstract: A miniature, solid state, cantilever beam accelerometer is constructed with an arrangement of strain sensing elements which provides for simpler temperature compensation, dual-axis acceleration measurement, and the capability of correcting for nonlinearity in a strain sensing element. Temperature compensation is facilitated by locating two strain sensing elements on the cantilever beam and two on the main body of the accelerometer and connecting the four elements in a Wheatstone bridge. Instead of a single bridge, two half bridges may be formed to allow for independent adjustment of each side of the Wheatstone bridge. Independent adjustment is also possible by using two full bridges with all strain sensing elements oriented in the same direction. If the elements of one bridge are oriented in an orthogonal direction, the accelerometer is capable of measuring both on-axis and off-axis accelerations.

Abstract: A process for fabricating complementary metal oxide semiconductors including doping to determine threshold voltage of a first conductivity channel device with second conductivity type impurities, counter-doping to determine the threshold voltage of a second conductivity channel device with second conductivity impurities, forming gate oxide, forming metal gate, and forming source and drain regions using the metal gate as a self-aligned mask. Preferably, the doping steps are performed using ion implantation and photoresist mask.

Abstract: A normally-off field effect transistor having the structure of an IGFET with a substantially undoped semiconductor material replacing the insulation between the substrate and the gate metal. A Schottky barrier formed between the gate metal and the substantially undoped semiconductor material produces a channel in the substrate when reverse biased. Method of fabrication is also described.

Abstract: A normally-off field effect transistor having the structure of an IGFET with a substantially undoped semiconductor material replacing the insulation between the substrate and the gate metal. A Schottky barrier formed between the gate metal and the substantially undoped semiconductor material produces a channel in the substrate when reverse biased. Method of fabrication is also described.