Abstract: A device for detecting radiation direction is an integrated circuit that includes a first and second phototransistor positioned anti-parallel with respect to each other and a reference phototransistor. The device does not require impinging radiation to be mechanically aligned using pinholes, apertures or mechanical slits. The first phototransistor detects the direction of the radiation in an x-plane, and the second phototransistor detects the direction of the radiation in the y-plane. The first and second phototransistors have two differential pairs. The P type base regions are formed in the <111> plane of the silicon to form opposing sidewalls for receiving radiation signals from a radiation source. A current is induced in the PN junction of each phototransistor, thereby causing a current output on the emitters of the phototransistors. The differential currents represent rectangular coordinates describing the direction of the radiation detected on the <111> plane.

Abstract: A process for fabricating complementary metal oxide semiconductors including doping to determine threshold voltage of a first conductivity channel device with second conductivity type impurities, counter-doping to determine the threshold voltage of a second conductivity channel device with second conductivity impurities, forming gate oxide, forming metal gate, and forming source and drain regions using the metal gate as a self-aligned mask. Preferably, the doping steps are performed using ion implantation and photoresist mask.

Abstract: A normally-off field effect transistor having the structure of an IGFET with a substantially undoped semiconductor material replacing the insulation between the substrate and the gate metal. A Schottky barrier formed between the gate metal and the substantially undoped semiconductor material produces a channel in the substrate when reverse biased. Method of fabrication is also described.

Abstract: A normally-off field effect transistor having the structure of an IGFET with a substantially undoped semiconductor material replacing the insulation between the substrate and the gate metal. A Schottky barrier formed between the gate metal and the substantially undoped semiconductor material produces a channel in the substrate when reverse biased. Method of fabrication is also described.