Abstract: In order to block hydrogen ions produced when forming an interlayer insulating film by HDP-CVD or the like to thereby suppress an adverse effect of the hydrogen ions on a device, in a semiconductor device including a contact layer, a metal interconnection and an interlayer insulating film on a semiconductor substrate having a gate electrode formed thereon, the interlayer insulating film is formed on the metal interconnection by bias-applied plasma CVD using source gas containing hydrogen atoms, and a silicon oxynitride film is provided in the underlayer of the metal interconnection and the interlayer insulating film.

Abstract: In order to block hydrogen ions produced when forming an interlayer insulating film by HDP-CVD or the like to thereby suppress an adverse effect of the hydrogen ions on a device, in a semiconductor device including a contact layer, a metal interconnection and an interlayer insulating film on a semiconductor substrate having a gate electrode formed thereon, the interlayer insulating film is formed on the metal interconnection by bias-applied plasma CVD using source gas containing hydrogen atoms, and a silicon oxynitride film is provided in the underlayer of the metal interconnection and the interlayer insulating film.

Abstract: In order to block hydrogen ions produced when forming an interlayer insulating film by HDP-CVD or the like to thereby suppress an adverse effect of the hydrogen ions on a device, in a semiconductor device including a contact layer, a metal interconnection and an interlayer insulating film on a semiconductor substrate having a gate electrode formed thereon, the interlayer insulating film is formed on the metal interconnection by bias-applied plasma CVD using source gas containing hydrogen atoms, and a silicon oxynitride film is provided in the underlayer of the metal interconnection and the interlayer insulating film.

Abstract: When microfabrication is done, a reliable semiconductor device is offered. A semiconductor device has a semiconductor substrate which has a main front surface, a plurality of convex patterns formed on the main front surface of a semiconductor substrate so that each might have a floating gate and a control gate, a first insulating film formed so that the upper surface and the side surface of each of a plurality of convex patterns might be covered, and so that width might become large rather than the portion which covers the lower part side surface of a convex pattern in the portion which covers an upper part side surface, and a second insulating film that covers the upper surface and the side surface of the first insulating film so that the cavity between the adjacent convex patterns may be occluded. The position occluded by the second insulating film of a cavity is a position higher than the upper surface of a floating gate, and is a position lower than the upper surface of a control gate.

Abstract: An interconnection is provided with a dummy interconnection connected to an interconnection body, and the dummy interconnection is provided with a stress concentration portion in which tensile stress higher than that of the interconnection body is generated. In proximity to the stress concentration portion, an insulating film formed by high-density plasma CVD is provided, and the tensile stress is generated in the stress concentration portion by the insulating film. With this structure, the occurrence of a void can be prevented at any position in the interconnection body.

Abstract: In order to block hydrogen ions produced when forming an interlayer insulating film by HDP-CVD or the like to thereby suppress an adverse effect of the hydrogen ions on a device, in a semiconductor device including a contact layer, a metal interconnection and an interlayer insulating film on a semiconductor substrate having a gate electrode formed thereon, the interlayer insulating film is formed on the metal interconnection by bias-applied plasma CVD using source gas containing hydrogen atoms, and a silicon oxynitride film is provided in the underlayer of the metal interconnection and the interlayer insulating film.

Abstract: When microfabrication is done, a reliable semiconductor device is offered. A semiconductor device has a semiconductor substrate which has a main front surface, a plurality of convex patterns formed on the main front surface of a semiconductor substrate so that each might have a floating gate and a control gate, a first insulating film formed so that the upper surface and the side surface of each of a plurality of convex patterns might be covered, and so that width might become large rather than the portion which covers the lower part side surface of a convex pattern in the portion which covers an upper part side surface, and a second insulating film that covers the upper surface and the side surface of the first insulating film so that the cavity between the adjacent convex patterns may be occluded. The position occluded by the second insulating film of a cavity is a position higher than the upper surface of a floating gate, and is a position lower than the upper surface of a control gate.

Abstract: An interconnection is provided with a dummy interconnection connected to an interconnection body, and the dummy interconnection is provided with a stress concentration portion in which tensile stress higher than that of the interconnection body is generated. In proximity to the stress concentration portion, an insulating film formed by high-density plasma CVD is provided, and the tensile stress is generated in the stress concentration portion by the insulating film. With this structure, the occurrence of a void can be prevented at any position in the interconnection body.

Abstract: The present invention aims at offering the filled structure of an oxide film etc. which can form an insulating film (oxide film) without void in a predetermined depressed portion by an economical and practical method and without increasing RF bias. According to the first invention, the oxide film filled structure is provided with the foundation (silicon substrate) having a depressed portion (trench), and the oxide film (silicon oxide film) formed in the depressed portion concerned. Here, the oxide film concerned includes the silicon oxide film region of silicon-richness in part at least.

Abstract: An interconnection is provided with a dummy interconnection connected to an interconnection body, and the dummy interconnection is provided with a stress concentration portion in which tensile stress higher than that of the interconnection body is generated. In proximity to the stress concentration portion, an insulating film formed by high-density plasma CVD is provided, and the tensile stress is generated in the stress concentration portion by the insulating film. With this structure, the occurrence of a void can be prevented at any position in the interconnection body.

Abstract: In order to block hydrogen ions produced when forming an interlayer insulating film by HDP-CVD or the like to thereby suppress an adverse effect of the hydrogen ions on a device, in a semiconductor device including a contact layer, a metal interconnection and an interlayer insulating film on a semiconductor substrate having a gate electrode formed thereon, the interlayer insulating film is formed on the metal interconnection by bias-applied plasma CVD using source gas containing hydrogen atoms, and a silicon oxynitride film is provided in the underlayer of the metal interconnection and the interlayer insulating film.

Abstract: An interconnection is provided with a dummy interconnection connected to an interconnection body, and the dummy interconnection is provided with a stress concentration portion in which tensile stress higher than that of the interconnection body is generated. In proximity to the stress concentration portion, an insulating film formed by high-density plasma CVD is provided, and the tensile stress is generated in the stress concentration portion by the insulating film. With this structure, the occurrence of a void can be prevented at any position in the interconnection body.