Patents by Inventor Kozaburo Sakai

Kozaburo Sakai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9153451
    Abstract: A method of forming a planar surface for a semiconductor device structure. The method comprises forming a particle film comprising a plurality of discrete particles on a non-planar surface of a semiconductor device structure. The semiconductor device structure is subjected to at least one chemical-mechanical polishing process after forming the particle film on the non-planar surface of the semiconductor device structure. Methods of forming a semiconductor device structure are also described.
    Type: Grant
    Filed: December 12, 2012
    Date of Patent: October 6, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Andrew Dennis Watson Carswell, Wayne Hai-Wei Huang, Siddartha Kondoju, Jin Lu, Suresh Ramakrishnan, Kozaburo Sakai, Sony Varghese, Andrey V. Zagrebelny
  • Publication number: 20140162455
    Abstract: A method of forming a planar surface for a semiconductor device structure. The method comprises forming a particle film comprising a plurality of discrete particles on a non-planar surface of a semiconductor device structure. The semiconductor device structure is subjected to at least one chemical-mechanical polishing process after forming the particle film on the non-planar surface of the semiconductor device structure. Methods of forming a semiconductor device structure are also described.
    Type: Application
    Filed: December 12, 2012
    Publication date: June 12, 2014
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Andrew Dennis Watson Carswell, Wayne Hai-Wei Huang, Siddartha Kondoju, Jin Lu, Suresh Ramakrishnan, Kozaburo Sakai, Sony Varghese, Andrey V. Zagrebelny
  • Publication number: 20130313718
    Abstract: A method of processing a substrate having integrated circuitry includes forming through-substrate vias partially through the substrate from a first side of the substrate. At least one through-substrate structure is formed partially through the substrate from the first substrate side. The at least one through-substrate structure extends deeper into the substrate than do the through-substrate vias. Substrate material is removed from a second side of the substrate to expose the through-substrate vias and the at least one through-substrate structure on the second substrate side. Additional implementations are disclosed. Integrated circuit substrates are disclosed independent of method of manufacture.
    Type: Application
    Filed: May 24, 2012
    Publication date: November 28, 2013
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Sony Varghese, Andrew Carswell, Kozaburo Sakai, Andrey V. Zagrebelny, Wayne Huang, Jin Lu, Suresh Ramakrishnan