Abstract: In STEP 1, a mapping operation is carried out by a mapping device. In STEP 2, based on position information for the wafer (W) detected by the mapping operation, it is determined whether or not a wafer (W) position is in an abnormal state or not. When the wafer position is determined to be in the abnormal state (Yes), a closing/opening operation, in which a FOUP door (19c) is temporarily closed and then opened, is carried out in STEP 3. In STEP 4, the number of times the FOUP door (19c) is closed/opened (in other words, the number of times a port door (62) is closed/opened) is counted, and in STEP 5, it is determined whether or not this count value is less than a preset value. If the count value is less than the preset value (Yes), the processing in STEP 1-STEP 5 is repeated once again.

Abstract: A method of lowering a temperature of a substrate table uses a substrate W processing system including a first substrate table 2b; one or more processing chambers 1b, in each of which the first substrate table 2b is disposed, the processing chamber being configured to perform a predetermined process, with the substrate being placed on the first substrate table 2b; a substrate transfer apparatus 31 configured to transfer the substrate to the processing chamber 1b; a transfer chamber in which the substrate transfer apparatus 31 is disposed; and a second substrate table configured to cool the substrate. The method of lowering a temperature of a substrate table comprises the steps of first transfer in which the substrate W placed on the first substrate table 2b is transferred to the second substrate table by the substrate transfer apparatus 31, and second transfer in which the substrate placed on the second substrate table is transferred to the first substrate table 2b.

Abstract: In STEP 1, a mapping operation is carried out by a mapping device. In STEP 2, based on position information for the wafer (W) detected by the mapping operation, it is determined whether or not a wafer (W) position is in an abnormal state or not. When the wafer position is determined to be in the abnormal state (Yes), a closing/opening operation, in which a FOUP door (19c) is temporarily closed and then opened, is carried out in STEP 3. In STEP 4, the number of times the FOUP door (19c) is closed/opened (in other words, the number of times a port door (62) is closed/opened) is counted, and in STEP 5, it is determined whether or not this count value is less than a preset value. If the count value is less than the preset value (Yes), the processing in STEP 1-STEP 5 is repeated once again.

Abstract: A method of lowering a temperature of a substrate table uses a substrate W processing system including a first substrate table 2b; one or more processing chambers 1b, in each of which the first substrate table 2b is disposed, the processing chamber being configured to perform a predetermined process, with the substrate being placed on the first substrate table 2b; a substrate transfer apparatus 31 configured to transfer the substrate to the processing chamber 1b; a transfer chamber in which the substrate transfer apparatus 31 is disposed; and a second substrate table configured to cool the substrate. The method of lowering a temperature of a substrate table comprises the steps of first transfer in which the substrate W placed on the first substrate table 2b is transferred to the second substrate table by the substrate transfer apparatus 31, and second transfer in which the substrate placed on the second substrate table is transferred to the first substrate table 2b.

Abstract: A susceptor is located in a treating space of a CVD apparatus with a wafer placed in contact with a first surface of a susceptor. The susceptor is heated by a heating source to impart the heat to the wafer. A treating gas is supplied into a treating space and decomposed in a course of a reaction to form a film on the wafer. A guard ring is located on a second surface of the susceptor which is situated around the first surface of the susceptor. The guard ring and wafer are heated by the susceptor in the same way. The surface of the susceptor is substantially not exposed between the guard ring and the wafer and a temperature on the exposed surface of the guard ring and that on the exposed surface of the wafer are nearly equal to each other.