Patents by Inventor Kozo Kondo

Kozo Kondo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11926216
    Abstract: A vibration damping device including a vibration-damping device main unit inserted into a mounting space of a bracket from a lateral side and securely supported by the bracket. The bracket includes engaging pieces on respective opposed inside faces of the mounting space, and engaging action of the engaging pieces with respect to respective detent engaging faces formed on a fixture member of the vibration-damping device main unit prevents the vibration-damping device main unit from becoming dislodged from the mounting space of the bracket. Opposed walls of the mounting space are each penetrated by an aperture window, and inspection flat surfaces are separately provided to an outside surface of each engaging piece visible from an outside through the aperture window and a corresponding external side surface of the bracket that is off the aperture window. The inspection flat surfaces are parallel to each other.
    Type: Grant
    Filed: December 23, 2021
    Date of Patent: March 12, 2024
    Assignees: SUMITOMO RIKO COMPANY LIMITED, HONDA MOTOR CO., LTD.
    Inventors: Kenji Oki, Shingo Tanaka, Hiroki Kondo, Yusuke Arai, Kozo Kubota
  • Patent number: 9696751
    Abstract: A substrate is provided with a transparent electrode in which the pattern is hardly visible even when the transparent electrode layer has been patterned, and a method for manufacturing thereof is provided. On at least one of the surfaces of a transparent film, a first, second, and third dielectric material layer, and a patterned transparent electrode layer are included, in this order, each preferably having a film thickness and refractive index within a specific range. The first and third dielectric material layers are silicon oxide layers containing SiOx and SiOv as main components, respectively. The second dielectric material layer is a metal oxide layer containing a metal oxide. The transparent electrode layer is a conductive metal oxide layer containing an indium-tin composite oxide as a main component. The refractive indexes of the first (n1), second (n2), and third (n3) dielectric material layers satisfy the relationship n3<n1<n2.
    Type: Grant
    Filed: January 29, 2013
    Date of Patent: July 4, 2017
    Assignee: KANEKA CORPORATION
    Inventors: Hiroaki Ueda, Kozo Kondo, Kazuhisa Danno
  • Patent number: 9198287
    Abstract: The substrate with a transparent electrode includes a first dielectric material layer mainly composed of SiOx, a second dielectric material layer mainly composed of a metal oxide, a third dielectric material layer mainly composed of SiOy, and a transparent electrode layer, in this order on a transparent film substrate. The transparent electrode layer is patterned to have an electrode layer-formed part and an electrode layer non-formed part. The transparent electrode layer is a layer mainly composed of an indium-tin composite oxide and having a thickness of 20 nm to 35 nm. The refractive index n1 of the first dielectric material layer, the refractive index n2 of the second dielectric material layer, and the refractive index n3 of the third dielectric material layer satisfy n3<n1<n2. The first dielectric material layer, the second dielectric material layer and the third dielectric material layer each have specific thicknesses.
    Type: Grant
    Filed: November 11, 2011
    Date of Patent: November 24, 2015
    Assignee: KANEKA CORPORATION
    Inventors: Hiroaki Ueda, Takahisa Fujimoto, Kozo Kondo, Kenji Yamamoto
  • Publication number: 20150145816
    Abstract: A substrate is provided with a transparent electrode in which the pattern is hardly visible even when the transparent electrode layer has been patterned, and a method for manufacturing thereof is provided. On at least one of the surfaces of a transparent film, a first, second, and third dielectric material layer, and a patterned transparent electrode layer are included, in this order, each preferably having a film thickness and refractive index within a specific range. The first and third dielectric material layers are silicon oxide layers containing SiOx and SiOv as main components, respectively. The second dielectric material layer is a metal oxide layer containing a metal oxide. The transparent electrode layer is a conductive metal oxide layer containing an indium-tin composite oxide as a main component. The refractive indexes of the first (n1), second (n2), and third (n3) dielectric material layers satisfy the relationship n3<n1<n2.
    Type: Application
    Filed: January 29, 2013
    Publication date: May 28, 2015
    Inventors: Hiroaki Ueda, Kozo Kondo, Kazuhisa Danno
  • Publication number: 20140232951
    Abstract: The substrate with a transparent electrode includes a first dielectric material layer mainly composed of SiOx, a second dielectric material layer mainly composed of a metal oxide, a third dielectric material layer mainly composed of SiOy, and a transparent electrode layer, in this order on a transparent film substrate. The transparent electrode layer is patterned to have an electrode layer-formed part and an electrode layer non-formed part. The transparent electrode layer is a layer mainly composed of an indium-tin composite oxide and having a thickness of 20 nm to 35 nm. The refractive index n1 of the first dielectric material layer, the refractive index n2 of the second dielectric material layer, and the refractive index n3 of the third dielectric material layer satisfy n3<n1<n2. The first dielectric material layer, the second dielectric material layer and the third dielectric material layer each have specific thicknesses.
    Type: Application
    Filed: November 11, 2011
    Publication date: August 21, 2014
    Applicant: KANEKA CORPORATION
    Inventors: Hiroaki Ueda, Takahisa Fujimoto, Kozo Kondo, Kenji Yamamoto
  • Publication number: 20100310863
    Abstract: A transparent electroconductive film includes a transparent substrate, at least one transparent electroconductive oxide layer deposited on the transparent substrate, and a plurality of hydrogen-containing carbon layers deposited on the transparent electroconductive oxide layer. At least one of the transparent electroconductive oxide layers contains zinc oxide. The hydrogen-containing carbon layers may be more than one, in which at least one of the hydrogen-containing carbon layers has a refractive index of 1.25 to 1.85. More preferably, the transparent electroconductive film satisfies a relationship of T1/T0?1.02 for light having a wavelength of 550 nm where T0 represents a light transmittance of the transparent substrate on which the at least one transparent electroconductive oxide layer is deposited and T1 represents a light transmittance of the transparent substrate on which the at least one transparent electroconductive oxide layer and the plurality of hydrogen-containing carbon layers are deposited.
    Type: Application
    Filed: November 27, 2008
    Publication date: December 9, 2010
    Applicant: Kaneka Corporation
    Inventors: Takashi Kuchiyama, Kenji Yamamoto, Mitsuru Ichikawa, Kozo Kondo
  • Patent number: 7309736
    Abstract: The present invention provides a novel acrylic block copolymer rich in flexibility and excellent in mechanical strength, moldability, oil resistance, heat resistance, thermal decomposition resistance, weather resistance, and compression set, and further rich in reactivity. The present invention also provides compositions, seal products, and automobile, electric, and electronic parts, all of which include the acrylic block copolymer. The acrylic block copolymer includes a methacrylic polymer block (a) and an acrylic polymer block (b), at least one of the polymer blocks containing, in its main chain, at least one acid anhydride group (c) represented by formula (1): (wherein R1s each represent hydrogen or a methyl group and may be the same or different, n represents an integer of 0 to 3, and m represents an integer of 0 or 1).
    Type: Grant
    Filed: July 31, 2003
    Date of Patent: December 18, 2007
    Assignee: Kaneka Corporation
    Inventors: Akio Taniguchi, Tadashi Kokubo, Kentaro Takesada, Kozo Kondo, Takeshi Chiba, Atsushi Kumasaki, Yutaka Kaneda
  • Publication number: 20050234199
    Abstract: The present invention provides a novel acrylic block copolymer rich in flexibility and excellent in mechanical strength, moldability, oil resistance, heat resistance, thermal decomposition resistance, weather resistance, and compression set, and further rich in reactivity. The present invention also provides compositions, seal products, and automobile, electric, and electronic parts, all of which include the acrylic block copolymer. The acrylic block copolymer includes a methacrylic polymer block (a) and an acrylic polymer block (b), at least one of the polymer blocks containing, in its main chain, at least one acid anhydride group (c) represented by formula (1): (wherein R1s each represent hydrogen or a methyl group and may be the same or different, n represents an integer of 0 to 3, and m represents an integer of 0 or 1).
    Type: Application
    Filed: July 31, 2003
    Publication date: October 20, 2005
    Applicant: Kaneka Corporation
    Inventors: Akio Taniguchi, Tadashi Kokubo, Kentaro Takesada, Kozo Kondo, Takeshi Chiba, Atsushi Kumasaki, Yutaka Kaneda
  • Patent number: 4832924
    Abstract: The present invention provides a process for producing a uranium oxide by dissolving a yellow cake in sulfuric acid or hydrochloric acid, bringing the obtained solution into contact with a chelating resin of diaminocarboxylic acid type and subjecting the product to neutralizing precipitation followed by heat treatment. By the contact of the solution with the chelating resin, iron, copper, molybdenum and vanadium among the metallic impurities are removed and in the subsequent neutralizing precipitation step, other metallic impurities such as aluminum, calcium, magnesium, sodium and potassium are removed. This process can easily produce uranium oxide having a high purity using a simple apparatus.
    Type: Grant
    Filed: December 2, 1987
    Date of Patent: May 23, 1989
    Assignee: Doryokuro Kakunenryo Kaihatsu Jigyodan
    Inventors: Shozo Tomoshige, Hideto Obara, Kozo Kondo, Keiichiro Otomura, Soichiro Yano
  • Patent number: 4517096
    Abstract: A novel method is disclosed which enables gallium and/or indium to be selectively separated and concentrated from a solution containing them in very low concentrations together with many other metal ions in rather high concentrations. The solution is passed through a bed of a chelating ion exchange resin having an amino carboxylic acid group either immediately or after the pH adjustment. Gallium and/or indium adsorbed on the chelate resin is desorbed by eluting with a mineral acid. The eluate, after the pH adjustment, is passed through another bed of a chelating ion exchange resin having an amino carboxylic acid group, and the resin is treated with a mineral acid to elute the metal ions adsorbed on the resin to thereby recover gallium and/or indium in the form of a concentrated solution.
    Type: Grant
    Filed: April 4, 1984
    Date of Patent: May 14, 1985
    Assignees: Dowa Mining Co., Ltd., Unitika, Ltd.
    Inventors: Kunio Sekine, Hitoshi Masuda, Kodo Ishibashi, Masahide Hirai, Shozo Tomoshige, Kozo Kondo