Abstract: Exposure verification is applied to exposure data indicating a pattern to be exposed by a charged particle beam. If an error point is extracted from the exposure data by the exposure verification, the values of coefficients are modified and exposure data is regenerated taking into consideration the coefficients whose values have been modified. Thus, exposure data is re-generated by changing each of the coefficient values within its appropriate range.

Abstract: A pattern size correcting device includes: a testing photomask (1) having a test pattern; a quantifying unit (2) that quantifies, using the testing photomask (1), size variation in the test pattern as a function of distance and in relation to an open area ratio; an open area ratio calculating unit (3) that divides an exposure area having a plurality of actual device patterns into a plurality of correction areas and calculates the open area ratio of the respective correction areas; a data correcting unit (4) that inputs the open area ratio calculated by the open area ratio calculating unit (3) into a result of the quantification that uses the photomask (1), calculates size variations of the actual device patterns in the respective correction areas, and corrects design data of the actual device patterns based on the calculation; and a proximity effect correcting unit correcting a proximity effect.

Abstract: A method for generating backscattering intensity with which charged particles are backscattered to a resist layer when charged particle beam is irradiated onto the resist layer which is formed on plural layers, each of which includes a pattern of one substance or a plurality of substances. For the nth layer from the resist layer among the plural layers, there is provided, for each of the substances in the nth layer, a reflection coefficient rn, which corresponds with the number of particles reflected by the nth layer; a transmission coefficient tn, which corresponds with the number of particles transmitted by the nth layer; and a scatter distribution in which the charged particles are scattered within the nth layer. The generation method comprises a first step of generating the backscattering intensity by using the reflection coefficient rn, the transmission coefficient tn, and the scatter distribution.

Abstract: A parameter extracting method capable of accurately and effectively extracting parameters used for charged particle beam exposure. The method comprises the steps of forming an unknown parameter layer on a known parameter layer, forming a resist on the unknown parameter layer, subjecting the resist to exposure through patterns changed in an existing range, and extracting parameters of the unknown parameter layer using the exposure result. In the parameter extraction method, parameters of layers lower than the unknown parameter layer are known. Therefore, layer combinations to be considered and the number of experimental data can be drastically reduced. After parameter extraction of the unknown parameter layer, an unknown parameter layer is newly formed on the layer. Then, the parameter thereof is extracted in the same manner.

Abstract: A plurality of patterns placed within an target region are classified by their placement positions, a pattern adjacent to each side of each pattern is searched for by using the classification results, and adjacent pattern information is obtained. Next, a back-scattering intensity at an evaluation point on a pattern is calculated, a movement quantity of the side is calculated so that the sum of a forward-scattering intensity and the back-scattering intensity at the evaluation point becomes a reference exposure intensity by using the adjacent pattern information and the back-scattering intensity, and the pattern is then corrected.

Abstract: A pattern size correcting device includes: a testing photomask (1) having a test pattern; a quantifying unit (2) that quantifies, using the testing photomask (1), size variation in the test pattern as a function of distance and in relation to an open area ratio; an open area ratio calculating unit (3) that divides an exposure area having a plurality of actual device patterns into a plurality of correction areas and calculates the open area ratio of the respective correction areas; a data correcting unit (4) that inputs the open area ratio calculated by the open area ratio calculating unit (3) into a result of the quantification that uses the photomask (1), calculates size variations of the actual device patterns in the respective correction areas, and corrects design data of the actual device patterns based on the calculation; and a proximity effect correcting unit correcting a proximity effect.

Abstract: A method for generating backscattering intensity with which charged particles are backscattered to a resist layer when charged particle beam is irradiated onto the resist layer which is formed on plural layers, each of which includes a pattern of one substance or a plurality of substances. For the nth layer from the resist layer among the plural layers, there is provided, for each of the substances in the nth layer, a reflection coefficient rn, which corresponds with the number of particles reflected by the nth layer; a transmission coefficient tn, which corresponds with the number of particles transmitted by the nth layer; and a scatter distribution in which the charged particles are scattered within the nth layer. The generation method comprises a first step of generating the backscattering intensity by using the reflection coefficient rn, the transmission coefficient tn, and the scatter distribution.

Abstract: (S12) A reference forward scattering intensity &egr;p is determined as equal to such a slice level that by adjusting the width of a pattern having the minimum width included in a block pattern repeatedly used and collectively exposed, the slice level that is in the range of 30 to 70% of the peak value of a forward scattering intensity distribution of the pattern becomes equal to the design width of the pattern. (S15) in each pattern in the block pattern a pattern width is adjusted such that the width of a forward scattering intensity distribution at &egr;p becomes equal to the design width of the pattern. Further, a collected exposure dose Qcp is determined such that Qcp(&egr;p+&agr;p′&eegr;)=Eth holds, where Eth is a threshold value for pattern developing, q is a backscattering coefficient and &agr;p′ is an effective pattern area density.

Abstract: The invention is a charged particle beam exposure method, wherein exposure data having exposure pattern data is generated from pattern data, and a material is exposed accoring with the exposure data; comprising the steps of: (a) generating plural correction areas with respect to the patterns; (b) dividing a long and narrow pattern of the pattern data into a plurality of patterns; (c) determining a pattern area density within the correction areas, and revising the pattern density of the correction area according with surrounding patterns; (d) determining a main quantity of exposure for each divided pattern according with the highest corrected pattern density; (e) generating supplementary exposure patterns in the correction areas within the divided patterns with a shortage of exposure energy in the case of the main quantity of exposure. An optimum main quantity of exposure is determined for each divided pattern to reduce the number of supplementary exposure patterns.

Abstract: (S12) A reference forward scattering intensity &egr;p is determined as equal to such a slice level that by adjusting the width of a pattern having the minimum width included in a block pattern repeatedly used and collectively exposed, the slice level that is in the range of 30 to 70% of the peak value of a forward scattering intensity distribution of the pattern becomes equal to the design width of the pattern. (S15) in each pattern in the block pattern a pattern width is adjusted such that the width of a forward scattering intensity distribution at &egr;p becomes equal to the design width of the pattern. Further, a collected exposure dose Qcp is determined such that Qcp(&egr;p+&agr;p′&eegr;)=Eth holds, where Eth is a threshold value for pattern developing, &eegr; is a backscattering coefficient and &agr;p′ is an effective pattern area density.

Abstract: The invention is a charged particle beam exposure method, wherein exposure data having exposure pattern data is generated from pattern data, and a material is exposed accoring with the exposure data; comprising the steps of: (a) generating plural correction areas with respect to the patterns; (b) dividing a long and narrow pattern of the pattern data into a plurality of patterns; (c) determining a pattern area density within the correction areas, and revising the pattern density of the correction area according with surrounding patterns.; (d) determining a main quantity of exposure for each divided pattern according with the highest corrected pattern density; (e) generating supplementary exposure patterns in the correction areas within the divided patterns with a shortage of exposure energy in the case of the main quantity of exposure. An optimum main quantity of exposure is determined for each divided pattern to reduce the number of supplementary exposure patterns.