Patents by Inventor Kozo Onoue

Kozo Onoue has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing highly pure silicon, highly pure silicon obtained by this method, and silicon raw material for manufacturing highly pure silicon
    Patent number: 10167199
    Abstract: Provided are: a method for manufacturing a highly pure silicon by unidirectional solidification of molten silicon, that can inexpensively and industrially easily manufacture highly pure silicon that has a low oxygen concentration and low carbon concentration and is suitable for applications such as manufacturing solar cells; highly pure silicon obtained by this method; and silicon raw material for manufacturing highly pure silicon. A method for manufacturing highly pure silicon using molten silicon containing 100 to 1000 ppmw of carbon and 0.5 to 2000 ppmw of germanium as the raw material when manufacturing highly pure silicon by unidirectionally solidifying molten silicon raw material in a casting container, the highly pure silicon obtained by this method, and the silicon raw material for manufacturing the highly pure silicon.
    Type: Grant
    Filed: March 8, 2012
    Date of Patent: January 1, 2019
    Assignee: Silicio Ferrosolar S.L.
    Inventors: Shinji Tokumaru, Masataka Hiyoshi, Jiro Kondo, Hitoshi Dohnomae, Yutaka Kishida, Shigeru Nakazawa, Kozo Onoue
  • METHOD FOR MANUFACTURING HIGHLY PURE SILICON, HIGHLY PURE SILICON OBTAINED BY THIS METHOD, AND SILICON RAW MATERIAL FOR MANUFACTURING HIGHLY PURE SILICON
    Publication number: 20150028268
    Abstract: Provided are a method for manufacturing a highly pure silicon by unidirectional solidification of molten silicon, that can inexpensively and industrially easily manufacture highly pure silicon that has a low oxygen concentration and low carbon concentration and is suitable for applications such as manufacturing solar cells; highly pure silicon obtained by this method and silicon raw material for manufacturing highly pure silicon. A method for manufacturing highly pure silicon using molten silicon containing 100 to 1000 ppmw of carbon and 0.5 to 2000 ppmw of germanium as the raw material when manufacturing highly pure silicon by unidirectionally solidifying molten silicon raw material in a casting container, the highly pure silicon obtained by this method, and the silicon raw material for manufacturing the highly pure silicon.
    Type: Application
    Filed: March 8, 2012
    Publication date: January 29, 2015
    Applicant: SILICIO FERROSOLAR S.L.
    Inventors: Shinji Tokumaru, Masataka HIiyoshi, Jiro Kondo, Hitoshi Dohnomae, Yutaka Kishida, Shigeru Nakazawa, Kozo Onoue