Patents by Inventor Kozo Sueishi

Kozo Sueishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • INFORMATION RECORDING DEVICE AND INFORMATION RECORDING METHOD
    Publication number: 20120250174
    Abstract: According to one embodiment, an information recording device includes: a magnetic recording medium having tracks; a detector configured to detect widths of fringing phenomena that occur on both sides, in a track arrangement direction, of a track during recording on the track; and a recording controller configured to control recording so that adjacent tracks overlap with each other and that a track pitch is set at least on the basis of a smaller one of the detected fringing widths and a data read width for reading of data from the track.
    Type: Application
    Filed: December 12, 2011
    Publication date: October 4, 2012
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Kozo SUEISHI, Akihiro HARIGAE
  • Optical information memory medium including indium (In) and bismuth (Bi)
    Patent number: 5138572
    Abstract: Recording and erasing optical information can be done by using an alloy film capable of forming two stable crystalline states differing in crystal texture and optical characteristics by being irradiated with optical energies under different conditions. A thin memory film preferably including 60 to 90 atom % of Indium (IN) and 10 to 40 atom % of Bismuth (Bi) is formed on a substrate.
    Type: Grant
    Filed: February 20, 1991
    Date of Patent: August 11, 1992
    Assignee: Fujitsu Limited
    Inventors: Nagaaki Koshino, Miyozo Maeda, Yasuyuki Goto, Itaru Shibata, Kenichi Utsumi, Akira Ushioda, Ken-ichi Itoh, Kozo Sueishi
  • Optical information memory medium recording and erasing information including gallium and antimony
    Patent number: 5072423
    Abstract: Recording and erasing optical information can be done by using an alloy film capable of forming two stable crystalline states differing in crystal texture and optical characteristics by being irradiated with optical energies under different conditions. The thin memory film preferably includes not more than 60 atom % of Gallium (Ga) and not less than 40 atom % of Antimony (Sb).
    Type: Grant
    Filed: April 4, 1991
    Date of Patent: December 10, 1991
    Assignee: Fujitsu Limited
    Inventors: Nagaaki Koshino, Miyozo Maeda, Yasuyuki Goto, Itaru Shibata, Kenichi Utsumi, Akira Ushioda, Ken-ichi Itoh, Kozo Sueishi
  • Method for recording information in an optical information memory medium including indium (In) and Antimony (Sb)
    Patent number: 5058061
    Abstract: Recording and erasing optical information can be done by using an alloy film capable of forming two stable crystalline states differing in crystal texture and optical characteristics by being irradiated with optical energies under different conditions. The memory film includes 35-45 atom % of indium (In) and 55-65 atom % of antimony (Sb). The memory film may include an additional element M selected from the group consisting of Al, Si, P, S, Zn, Ga, Ge, As, Se, Ag, Cd, Sn, Te, Tl, Pb, Bi, and a combination of these elements, the composition of the memory film being expressed by the formula (In.sub.x Sb.sub.1-x).sub.1-y M.sub.y.
    Type: Grant
    Filed: August 31, 1989
    Date of Patent: October 15, 1991
    Assignee: Fujitsu Limited
    Inventors: Nagaaki Koshino, Miyozo Maeda, Yasuyuki Goto, Itaru Shibata, Kenichi Utsumi, Akira Ushioda, Ken-ichi Itoh, Kozo Sueishi
  • Optical information memory medium for recording and erasing information
    Patent number: 4947372
    Abstract: Recording and erasing optical information can be done by using an alloy film capable of forming two stable crystalline states differing in crystal texture and optical characteristics by being irradiated with optical energies under different conditions. The memory film includes 35-45 atom % of Indium (In) and 55-65 atom % of antimony (Sb).
    Type: Grant
    Filed: November 30, 1989
    Date of Patent: August 7, 1990
    Assignee: Fujitsu Limited
    Inventors: Nagaaki Koshino, Miyozo Maeda, Yasuyuki Goto, Itaru Shibata, Kenichi Utsumi, Akira Ushioda, Ken-ichi Itoh, Kozo Sueishi