Abstract: A semiconductor device with a semiconductor body is specified, the semiconductor body extending in a vertical direction between a first main surface and a second main surface opposite the first main surface. The semiconductor body comprises a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type different from the first conductivity type thereby forming a first pn junction, wherein the first semiconductor layer is more heavily doped than the second semiconductor layer. A side surface of the semiconductor body extending between the first main surface and the second main surface delimits the semiconductor body in a lateral direction comprises a first partial region and a second partial region, wherein the first partial region and the second partial region delimit the first semiconductor layer in regions.