Patents by Inventor Krishan Gopal

Krishan Gopal has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • DIPHENYL THIOUREA AND DIPHENYL UREA DERIVATIVES AS INHIBITORS OF ENDOCYTOSIS
    Publication number: 20240116863
    Abstract: The present invention relates to method of inhibition of cellular endocytosis by treating the cells with compound of formula-1 Diphenylthio urea and Diphenylurea derivatives. Said invention also discloses method of treatment of infectious diseases, neurological disease, cancer, kidney disease in a subject in need thereof by administering therapeutically effective concentration of compounds of Formula-1, Diphenylthio urea and Diphenylurea derivatives which are effective inhibitors of cellular endocytosis. Said invention also discloses compounds of Formula-1, Diphenylthio urea and Diphenylurea derivatives and pharmaceutical composition comprising compounds of Formula-1, Diphenylthio urea and Diphenylurea derivatives along with suitable excipients.
    Type: Application
    Filed: September 15, 2022
    Publication date: April 11, 2024
    Inventors: NIRMAL KUMAR, INDRANIL BANERJEE, IRSHAD MAAJID TAILY, PRABAL BANERJEE, CHARANDEEP SINGH, ANSHUL SHARMA, RAJESH P. RINGE, KRISHAN GOPAL THAKUR, PRIYANKA SINGH
  • Processing with reduced line end shortening ratio
    Patent number: 8394724
    Abstract: A method for forming device features with reduced line end shortening (LES) includes trimming the device feature to achieve the desired sub-ground rule critical dimension during the etch to form the device feature.
    Type: Grant
    Filed: August 22, 2007
    Date of Patent: March 12, 2013
    Assignee: Globalfoundries Singapore Pte. Ltd.
    Inventors: Hai Cong, Wei Loong Loh, Krishan Gopal, Xin Zhang, Mei Sheng Zhou, Pradeep Ramachandramurthy Yelehanka
  • Processing with Reduced Line End Shortening Ratio
    Publication number: 20080054477
    Abstract: A method for forming device features with reduced line end shortening (LES) includes trimming the device feature to achieve the desired sub-ground rule critical dimension during the etch to form the device feature.
    Type: Application
    Filed: August 22, 2007
    Publication date: March 6, 2008
    Applicant: CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
    Inventors: Hai CONG, Wei Loong LOH, Krishan GOPAL, Xin ZHANG, Mei Sheng ZHOU, Pradeep Ramachandramurthy YELEHANKA