Abstract: Described herein are methods of making, as well as self-biased UV photodetectors used to design self-powered UV sensors for harsh environment applications, e.g., advanced nuclear reactors and space missions, to provide wide bandgap semiconductors as high-efficiency self-biased UV photodetectors.

Abstract: Described herein are methods and systems for fabrication of high-performing metal-oxide-semiconductor (MOS) devices by depositing yttrium oxide epitaxial layers through pulsed laser deposition on high quality 4H—SiC epitaxial layers. The novel MOS devices revealed an extraordinarily long hole diffusion length that has never been reported. These devices have been investigated as radiation detectors which demonstrated an excellent radiation response at zero applied bias (self-biased) with a record-high energy resolution.

Abstract: A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12°; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a top contact on the n-type epitaxial layer. The buffer epitaxial layer can include a n-type 4H—SiC epitaxial layer doped at a concentration of about 1×1015 cm?3 to about 5×1018 cm?3 with nitrogen, boron, aluminum, or a mixture thereof. The n-type epitaxial layer can include a n-type 4H—SiC epitaxial layer doped at a concentration of about 1×1013 cm?3 to about 5×1015 cm?3 with nitrogen. The top contact can have a thickness of about 8 nm to about 15 nm.

Abstract: A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12°; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a top contact on the n-type epitaxial layer. The buffer epitaxial layer can include a n-type 4H—SiC epitaxial layer doped at a concentration of about 1×1015 cm?3 to about 5×1018 cm?3 with nitrogen, boron, aluminum, or a mixture thereof. The n-type epitaxial layer can include a n-type 4H—SiC epitaxial layer doped at a concentration of about 1×1013 cm?3 to about 5×1015 cm?3 with nitrogen. The top contact can have a thickness of about 8 nm to about 15 nm.

Abstract: GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Abstract: GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.