Abstract: An electronic structure may include a conductive pad on a substrate, and an insulating layer on the substrate and on the conductive pad. The insulating layer may have a via therein so that a portion of the conductive pad opposite the substrate is free of the insulating layer. A conductive layer comprising copper may be on the portion of the conductive pad free of the insulating layer, on sidewalls of the via, and on surface portions of the insulating layer surrounding the via opposite the substrate and the conductive pad, and the conductive layer comprising copper may have a thickness of at least approximately 1.0 ?m. A conductive barrier layer may be on the conductive layer comprising copper, and the conductive barrier layer may include at least one of nickel, platinum, palladium, and/or combinations thereof.

Abstract: An electronic structure may include a conductive pad on a substrate, and an insulating layer on the substrate and on the conductive pad. The insulating layer may have a via therein so that a portion of the conductive pad opposite the substrate is free of the insulating layer. A conductive layer comprising copper may be on the portion of the conductive pad free of the insulating layer, on sidewalls of the via, and on surface portions of the insulating layer surrounding the via opposite the substrate and the conductive pad, and the conductive layer comprising copper may have a thickness of at least approximately 1.0 ?m. A conductive barrier layer may be on the conductive layer comprising copper, and the conductive barrier layer may include at least one of nickel, platinum, palladium, and/or combinations thereof.

Abstract: Methods of forming an electronic structure may include forming a seed layer on an electronic substrate, and forming a conductive shunt layer on portions of the seed layer wherein portions of the seed layer are free of the conductive shunt layer. A conductive barrier layer may be formed on the conductive shunt layer opposite the seed layer wherein the conductive shunt layer comprises a first material and wherein the barrier layer comprises a second material different than the first material. Moreover, a solder layer may be formed on the barrier layer opposite the conductive shunt layer wherein the solder layer comprises a third material different than the first and second materials. Related structures are also discussed.

Abstract: Methods of forming an electronic structure may include forming a seed layer on an electronic substrate, and forming a conductive shunt layer on portions of the seed layer wherein portions of the seed layer are free of the conductive shunt layer. A conductive barrier layer may be formed on the conductive shunt layer opposite the seed layer wherein the conductive shunt layer comprises a first material and wherein the barrier layer comprises a second material different than the first material. Moreover, a solder layer may be formed on the barrier layer opposite the conductive shunt layer wherein the solder layer comprises a third material different than the first and second materials. Related structures are also discussed.

Abstract: Methods of bonding two components may include positioning the components relative to one another to obtain a desired orientation. Once the desired orientation is obtained, the components can be bonded in the desired orientation with metal wherein a temperature of both components is maintained below a melting temperature of the metal while bonding. Related structures are also discussed.

Abstract: Methods of forming an electronic structure may include forming a seed layer on an electronic substrate, and forming a conductive shunt layer on portions of the seed layer wherein portions of the seed layer are free of the conductive shunt layer. A conductive barrier layer may be formed on the conductive shunt layer opposite the seed layer wherein the conductive shunt layer comprises a first material and wherein the barrier layer comprises a second material different than the first material. Moreover, a solder layer may be formed on the barrier layer opposite the conductive shunt layer wherein the solder layer comprises a third material different than the first and second materials. Related structures are also discussed.

Abstract: Methods of bonding two components may include positioning the components relative to one another to obtain a desired orientation. Once the desired orientation is obtained, the components can be bonded in the desired orientation with metal wherein a temperature of both components is maintained below a melting temperature of the metal while bonding. Related structures are also discussed.

Abstract: Methods of bonding two components may include positioning the components relative to one another to obtain a desired orientation. Once the desired orientation is obtained, the components can be bonded in the desired orientation with metal wherein a temperature of both components is maintained below a melting temperature of the metal while bonding. Related structures are also discussed.

Abstract: Methods of forming an electronic structure may include forming a seed layer on an electronic substrate, and forming a conductive shunt layer on portions of the seed layer wherein portions of the seed layer are free of the conductive shunt layer. A conductive barrier layer may be formed on the conductive shunt layer opposite the seed layer wherein the conductive shunt layer comprises a first material and wherein the barrier layer comprises a second material different than the first material. Moreover, a solder layer may be formed on the barrier layer opposite the conductive shunt layer wherein the solder layer comprises a third material different than the first and second materials. Related structures are also discussed.

Abstract: Methods of bonding two components may include positioning the components relative to one another to obtain a desired orientation. Once the desired orientation is obtained, the components can be bonded in the desired orientation with metal wherein a temperature of both components is maintained below a melting temperature of the metal while bonding. Related structures are also discussed.

Abstract: A process is provided for making a multilayer integrated circuit substrate having improved via connection. A first layer M1 of chrome-copper-chrome is applied to a ceramic substrate and the circuits etched. A polyimide layer is then applied, cured, and developed and etched to provide via holes in the polyimide down to the M1 circuitry. The top chrome is now etched to expose the M1 copper in the via holes. A second layer M2 of copper-chrome is evaporated onto the polyimide at a high substrate temperature to provide a copper interface at the base of the vias having no visable grain boundaries and a low resistance. M2 circuitization is then carried out.