Abstract: A method of making a catalyst comprises: mixing three or more catalytically active components with water to form an impregnating solution; contacting a support with the impregnating solution; impregnating the catalytically active components onto the support to form an impregnated support; and calcining the impregnated support to form a catalyst. Another method of making a catalyst comprises: co-impregnating a support with three or more catalytically active components in an impregnating solution to form an impregnated support; and calcining the impregnated support to form the catalyst.

Abstract: A method of making a catalyst comprises: mixing a catalytically active component and a surfactant to form a mixture, wherein the catalytically active component comprises phosphorus; forming a gel; physically shearing the gel to form a physically sheared gel; combining the physically sheared gel with a support; and calcining the support with the physically sheared gel to form the catalyst. Another method of making a catalyst comprises: mixing a catalytically active component and a surfactant to form a mixture, wherein the catalytically active component comprises phosphorus; letting the mixture sit without mixing for greater than 1 hour to form a set mixture; subjecting the set mixture to shear to form a sheared mixture; combining the sheared mixture with a support; and calcining the support with the sheared mixture to form the catalyst.

Abstract: A method of making a catalyst comprises: mixing a catalytically active component and a surfactant to form a mixture, wherein the catalytically active component comprises phosphorus; forming a gel; physically shearing the gel to form a physically sheared gel; combining the physically sheared gel with a support; and calcining the support with the physically sheared gel to form the catalyst. Another method of making a catalyst comprises: mixing a catalytically active component and a surfactant to form a mixture, wherein the catalytically active component comprises phosphorus; letting the mixture sit without mixing for greater than 1 hour to form a set mixture; subjecting the set mixture to shear to form a sheared mixture; combining the sheared mixture with a support; and calcining the support with the sheared mixture to form the catalyst.

Abstract: A method of making a catalyst comprises: mixing three or more catalytically active components with water to form an impregnating solution; contacting a support with the impregnating solution; impregnating the catalytically active components onto the support to form an impregnated support; and calcining the impregnated support to form a catalyst. Another method of making a catalyst comprises: co-impregnating a support with three or more catalytically active components in an impregnating solution to form an impregnated support; and calcining the impregnated support to form the catalyst.

Abstract: Methods of forming an electronic structure may include forming a seed layer on an electronic substrate, and forming a conductive shunt layer on portions of the seed layer wherein portions of the seed layer are free of the conductive shunt layer. A conductive barrier layer may be formed on the conductive shunt layer opposite the seed layer wherein the conductive shunt layer comprises a first material and wherein the barrier layer comprises a second material different than the first material. Moreover, a solder layer may be formed on the barrier layer opposite the conductive shunt layer wherein the solder layer comprises a third material different than the first and second materials. Related structures are also discussed.

Abstract: Methods of bonding two components may include positioning the components relative to one another to obtain a desired orientation. Once the desired orientation is obtained, the components can be bonded in the desired orientation with metal wherein a temperature of both components is maintained below a melting temperature of the metal while bonding. Related structures are also discussed.

Abstract: Methods of forming an electronic structure may include forming a seed layer on an electronic substrate, and forming a conductive shunt layer on portions of the seed layer wherein portions of the seed layer are free of the conductive shunt layer. A conductive barrier layer may be formed on the conductive shunt layer opposite the seed layer wherein the conductive shunt layer comprises a first material and wherein the barrier layer comprises a second material different than the first material. Moreover, a solder layer may be formed on the barrier layer opposite the conductive shunt layer wherein the solder layer comprises a third material different than the first and second materials. Related structures are also discussed.