Abstract: An embodiment of a memory device may comprise a vertical channel, a first memory cell formed on the vertical channel, a first wordline coupled to the first memory cell, a second memory cell formed on the vertical channel immediately above the first memory cell, a second wordline coupled to the second memory cell, and an airgap disposed between the first wordline and the second wordline. Other embodiments are disclosed and claimed.

Abstract: An embodiment of a memory device may comprise a vertical channel, a first memory cell formed on the vertical channel, a first wordline coupled to the first memory cell, a second memory cell formed on the vertical channel immediately above the first memory cell, a second wordline coupled to the second memory cell, and an airgap disposed between the first wordline and the second wordline. Other embodiments are disclosed and claimed.

Abstract: Systems, apparatuses and methods may provide for technology that biases a word line of a block in NAND memory to a first voltage level, biases a source-side select gate and a drain-side select gate of the block to a second voltage level, and issues a discharge erase pulse to bitlines and a source of the block, wherein the discharge erase pulse is issued at a third voltage level, wherein the third voltage level is greater than the first voltage level and the second voltage level, and wherein the third voltage level is less than a fourth voltage level of a standard erase pulse. In one example, the discharge erase pulse injects holes into pillars of the block and bypasses an erase of cells in the pillars of the block.

Abstract: An integrated circuit memory includes a first memory block and an adjacent second memory block. The first memory block comprises a first memory pillar around which a first memory cell is formed. The second memory block comprises a second memory pillar around which a second memory cell is formed. An isolation or slit area between the first and second memory blocks electrically isolates the first and second memory blocks. In an example, the slit area comprising a slit pillar around which no memory cells are formed. The slit pillar is a dummy pillar, and insulator material electrically isolates the slit pillar from a Word Line (WL) through which it passes. The isolation layer electrically can also isolate a (WL) of the first memory block from a corresponding WL of the second memory block. In an example, the slit pillar and the memory pillars have at least in part similar structures.

Abstract: An apparatus, a method, and a system. The method includes implementing an erase operation on a deck of a superblock, block or subblock of a three-dimensional (3D) non-volatile memory device to obtain an erased deck; applying a dummy read pulse to one or more wordlines (WLs) of a to-be-read deck of the superblock, block or subblock; and implementing, after application of the dummy read pulse, a read operation on one or more memory cells corresponding to the one or more WLs to read data from the one or more memory cells.

Abstract: An apparatus and/or system is described including a memory device or a controller for the memory device to perform heating of the memory device. In embodiments, a controller is to receive a temperature of the memory device and determine that the temperature is below a threshold temperature. In embodiments, the controller activates a heater for one or more memory die to assist the memory device in moving the temperature towards the threshold temperature, to assist the memory device when reading data. In embodiments, the heater comprises a plurality of conductive channels included in the one or more memory die or other on-board heater. Other embodiments are disclosed and claimed.

Abstract: An integrated circuit memory includes a first memory block and an adjacent second memory block. The first memory block comprises a first memory pillar around which a first memory cell is formed. The second memory block comprises a second memory pillar around which a second memory cell is formed. An isolation or slit area between the first and second memory blocks electrically isolates the first and second memory blocks. In an example, the slit area comprising a slit pillar around which no memory cells are formed. The slit pillar is a dummy pillar, and insulator material electrically isolates the slit pillar from a Word Line (WL) through which it passes. The isolation layer electrically can also isolate a (WL) of the first memory block from a corresponding WL of the second memory block. In an example, the slit pillar and the memory pillars have at least in part similar structures.

Abstract: An embodiment of a memory device may comprise a vertical channel, a first memory cell formed on the vertical channel, a first wordline coupled to the first memory cell, a second memory cell formed on the vertical channel immediately above the first memory cell, a second wordline coupled to the second memory cell, and an airgap disposed between the first wordline and the second wordline. Other embodiments are disclosed and claimed.

Abstract: Systems, apparatuses and methods may provide for technology that biases a word line of a block in NAND memory to a first voltage level, biases a source-side select gate and a drain-side select gate of the block to a second voltage level, and issues a discharge erase pulse to bitlines and a source of the block, wherein the discharge erase pulse is issued at a third voltage level, wherein the third voltage level is greater than the first voltage level and the second voltage level, and wherein the third voltage level is less than a fourth voltage level of a standard erase pulse. In one example, the discharge erase pulse injects holes into pillars of the block and bypasses an erase of cells in the pillars of the block.

Abstract: An apparatus, a method, and a system. The method includes implementing an erase operation on a deck of a superblock, block or subblock of a three-dimensional (3D) non-volatile memory device to obtain an erased deck; applying a dummy read pulse to one or more wordlines (WLs) of a to-be-read deck of the superblock, block or subblock; and implementing, after application of the dummy read pulse, a read operation on one or more memory cells corresponding to the one or more WLs to read data from the one or more memory cells.

Abstract: An apparatus, a method, and a system. The method includes implementing an erase operation on a deck of a superblock, block or subblock of a three-dimensional (3D) non-volatile memory device to obtain an erased deck; applying a dummy read pulse to one or more wordlines (WLs) of a to-be-read deck of the superblock, block or subblock; and implementing, after application of the dummy read pulse, a read operation on one or more memory cells corresponding to the one or more WLs to read data from the one or more memory cells.

Abstract: Flash memory technology is disclosed. In one example, a flash memory component can include a plurality of conductive layers vertically spaced apart from one another and separated by voids, each of the plurality of conductive layers forming a word line. The memory component can also include a vertically oriented conductive channel extending through the plurality of conductive layers. In addition, the flash memory component can include a plurality of memory cells coupling the plurality of conductive layers to the conductive channel. Each word line can be associated with one of the plurality of memory cells. Associated devices, systems, and methods are also disclosed.

Abstract: An apparatus, a method, and a system. The method includes implementing an erase operation on a deck of a superblock, block or subblock of a three-dimensional (3D) non-volatile memory device to obtain an erased deck; applying a dummy read pulse to one or more wordlines (WLs) of a to-be-read deck of the superblock, block or subblock; and implementing, after application of the dummy read pulse, a read operation on one or more memory cells corresponding to the one or more WLs to read data from the one or more memory cells.

Abstract: An apparatus and/or system is described including a memory device or a controller for the memory device to perform heating of the memory device. In embodiments, a controller is to receive a temperature of the memory device and determine that the temperature is below a threshold temperature. In embodiments, the controller activates a heater for one or more memory die to assist the memory device in moving the temperature towards the threshold temperature, to assist the memory device when reading data. In embodiments, the heater comprises a plurality of conductive channels included in the one or more memory die or other on-board heater. Other embodiments are disclosed and claimed.

Abstract: Memory devices might be configured to perform methods including reading a first page of memory cells and flag data wherein the flag data indicates whether a second page of memory cells adjacent to the first page is programmed, and determining from the flag data whether to re-read the first page of memory cells with an adjusted read voltage; performing a sense operation on memory cells coupled to first data lines of a first array of memory cells and memory cells coupled to data lines of a second array of memory cells, and determining a program indication of memory cells coupled to second data lines from the sense operation performed on the memory cells coupled to the data lines of the second array of memory cells; and/or programming memory cells coupled to first data lines in a first array of memory cells, and programming memory cells coupled to second data lines in the first array of memory cells while programming memory cells coupled to data lines in a second array of memory cells with flag data indicative o

Abstract: An integrated circuit memory includes a logic circuitry bonded to a memory array. For example, the logic circuitry is formed separately from the memory array, and then the logic circuitry and the memory array are bonded. The logic circuitry facilitates operations of the memory array and includes complementary metal-oxide-semiconductor (CMOS) logic components, such as word line drivers, bit line drivers, sense amplifiers for the memory array. In an example, instead of being bonded to a single memory array, the logic circuitry is bonded to and shared by two memory arrays. For example, the logic circuitry is between two memory arrays. Due to the bonding process, a bonding interface layer is formed. Thus, in such an example, a first bonding interface layer is between the logic circuitry and a first memory array, and a second bonding interface layer is between the logic circuitry and a second memory array.

Abstract: An integrated circuit memory includes a logic circuitry bonded to a memory array. For example, the logic circuitry is formed separately from the memory array, and then the logic circuitry and the memory array are bonded. The logic circuitry facilitates operations of the memory array and includes complementary metal-oxide-semiconductor (CMOS) logic components, such as word line drivers, bit line drivers, sense amplifiers for the memory array. In an example, instead of being bonded to a single memory array, the logic circuitry is bonded to and shared by two memory arrays. For example, the logic circuitry is between two memory arrays. Due to the bonding process, a bonding interface layer is formed. Thus, in such an example, a first bonding interface layer is between the logic circuitry and a first memory array, and a second bonding interface layer is between the logic circuitry and a second memory array.

Abstract: Embodiments of the present disclosure are directed towards techniques to provide a memory device with reduced capacitance. In one embodiment, a memory array is formed in a die, and includes one or more pillars and a plurality of wordlines coupled with the one or more pillars. Adjacent wordlines of the plurality of wordlines are separated by respective dielectric layers, which may include components, to reduce capacitance of the plurality of wordlines. The components comprise air gaps or low-k dielectric material. Other embodiments may be described and/or claimed.

Abstract: A memory structure can include a conductive channel, a charge storage structure adjacent to the conductive channel, and a strain-inducing layer adjacent to the conductive channel on a side opposite the charge storage structure. The strain-inducing layer can have a higher coefficient of thermal expansion (CTE) than the conductive channel.

Abstract: Memory devices including a controller configured to cause the memory device to apply a positive first voltage level to a first data line selectively connected to a first string of series-connected memory cells while applying a second voltage level, higher than the first voltage level, to a second data line selectively connected to a second string of series-connected memory cells; while applying the first voltage level to the first data line and applying the second voltage level to the second data line, applying a third voltage level to a particular access line coupled to a memory cell of a first string of series-connected memory cells selected for programming, wherein a differential between the third voltage level and the first voltage level is configured to increase a threshold voltage of the memory cell selected for programming, as well as other apparatus containing similar memory devices.