Patents by Inventor Krishnakumar VELAPPAN
Krishnakumar VELAPPAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11978816Abstract: Object of the invention is to provide a new thin film device comprising at least one thin film cell, wherein the thin film cell comprises a first electrode, a photoactive layer and a second electrode, wherein the photoactive layer is arranged between the first and the second electrode, wherein at least one additional conductive line is arranged within an active area of the thin film cell and included in the photoactive layer and electrically interconnected with the first electrode and electrically insulated from the second electrode. Furthermore, the invention provides a method of forming a thin film device comprising at least one thin film cell, wherein the thin film cell comprises a first electrode, a photoactive layer and a second electrode and the photoactive layer is arranged between the first and the second electrode.Type: GrantFiled: November 30, 2017Date of Patent: May 7, 2024Assignees: China Triumph International Engineering Co., Ltd., CTF Solar GmbHInventors: Shou Peng, Michael Harr, Xinjian Yin, Ganhua Fu, Krishnakumar Velappan, Bastian Siepchen
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Patent number: 11563138Abstract: The present invention proposes a method to form a CdSeTe thin film with a defined amount of selenium and with a high quality. The method comprises the steps of providing a base substrate and of depositing a partial CdSeTe layer on a first portion of the base substrate. The step of depositing a partial CdSeTe layer is performed at least twice, wherein a predetermined time period without deposition of a partial CdSeTe layer on the first portion of the base substrate is provided between two subsequent steps of depositing a partial CdSeTe layer. The temperature of the base substrate and the CdSeTe layer already deposited on the first portion of the base substrate is controlled during the predetermined time period such that re-evaporation of Cd and/or Te from the CdSeTe layer already deposited takes place.Type: GrantFiled: August 8, 2019Date of Patent: January 24, 2023Assignees: CHINA TRIUMPH INTERNATIONAL ENGINEERING CO., LTD., CTF SOLAR GMBHInventors: Shou Peng, Xinjian Yin, Ganhua Fu, Krishnakumar Velappan, Michael Harr, Bastian Siepchen
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Publication number: 20220352408Abstract: The present invention proposes a method to form a CdSeTe thin film with a defined amount of selenium and with a high quality. The method comprises the steps of providing a base substrate and of depositing a partial CdSeTe layer on a first portion of the base substrate. The step of depositing a partial CdSeTe layer is performed at least twice, wherein a predetermined time period without deposition of a partial CdSeTe layer on the first portion of the base substrate is provided between two subsequent steps of depositing a partial CdSeTe layer. The temperature of the base substrate and the CdSeTe layer already deposited on the first portion of the base substrate is controlled during the predetermined time period such that re-evaporation of Cd and/or Te from the CdSeTe layer already deposited takes place.Type: ApplicationFiled: August 8, 2019Publication date: November 3, 2022Applicants: CHINA TRIUMPH INTERNATIONAL ENGINEERING CO., LTD., CTF SOLAR GMBHInventors: SHOU PENG, XINJIAN YIN, GANHUA FU, KRISHNAKUMAR VELAPPAN, MICHAEL HARR, BASTIAN SIEPCHEN
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Patent number: 11217720Abstract: A method for depositing a CdTe layer on a substrate in a vacuum chamber by means of physical gas phase deposition is provided. The substrate is heated to a coating temperature before the deposition process and then guided past a vessel in which CdTe is converted into a vapour state, a gaseous component with an increased pressure (compared to the vacuum in the vacuum chamber) flowing through at least one inlet, against the substrate surface to be coated, such that the gaseous component is adsorbed on the substrate surface to be coated before the substrate is guided past the at least one vessel.Type: GrantFiled: February 3, 2017Date of Patent: January 4, 2022Assignees: FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V., CTF SOLAR GMBHInventors: Henry Morgner, Christoph Metzner, Daniel Hirsch, Olaf Zywitzki, Ludwig Decker, Torsten Werner, Bastian Siepchen, Bettina Späth, Krishnakumar Velappan, Christian Kraft, Christian Drost
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Publication number: 20210013352Abstract: Object of the invention is to provide a new thin film device comprising at least one thin film cell, wherein the thin film cell comprises a first electrode, a photoactive layer and a second electrode, wherein the photoactive layer is arranged between the first and the second electrode, wherein at least one additional conductive line is arranged within an active area of the thin film cell and included in the photoactive layer and electrically interconnected with the first electrode and electrically insulated from the second electrode. Furthermore, the invention provides a method of forming a thin film device comprising at least one thin film cell, wherein the thin film cell comprises a first electrode, a photoactive layer and a second electrode and the photoactive layer is arranged between the first and the second electrode.Type: ApplicationFiled: November 30, 2017Publication date: January 14, 2021Applicants: China Triumph International Engineering Co., Ltd., CTF Solar GmbHInventors: Shou PENG, Michael HARR, Xinjian YIN, Ganhua FU, Krishnakumar VELAPPAN, Bastian SIEPCHEN
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Publication number: 20190027634Abstract: A method for depositing a CdTe layer on a substrate in a vacuum chamber by means of physical gas phase deposition is provided. The substrate is heated to a coating temperature before the deposition process and then guided past a vessel in which CdTe is converted into a vapour state, a gaseous component with an increased pressure (compared to the vacuum in the vacuum chamber) flowing through at least one inlet, against the substrate surface to be coated, such that the gaseous component is adsorbed on the substrate surface to be coated before the substrate is guided past the at least one vessel.Type: ApplicationFiled: February 3, 2017Publication date: January 24, 2019Applicants: Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., CTF SOLAR GmbHInventors: Henry Morgner, Christoph Metzner, Daniel Hirsch, Olaf Zywitzki, Ludwig Decker, Torsten Werner, Bastian Siepchen, Bettina Späth, Krishnakumar Velappan, Christian Kraft, Christian Drost
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Patent number: 9960307Abstract: A method to produce thin film solar cells in superstrate or substrate configuration is an efficient way to minimize the loss due to absorption in CdS layer and to eliminate the CdCl2 activation treatment step. This is achieved by applying a sacrificial metal-halide layer between the CdS-layer and the CdTe-layer of the solar cells.Type: GrantFiled: August 27, 2014Date of Patent: May 1, 2018Assignees: China Triumph International Engineering Co., Ltd., CTF SOLAR GMBHInventors: Krishnakumar Velappan, Bastian Siepchen, Bettina Späth, Christian Drost, Shou Peng
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Patent number: 9899560Abstract: The present invention proposes a method to produce thin film CdTe solar cells having a pin-hole free and uniformly doped CdTe layer with a reduced layer thickness. The method according to the present invention is an efficient way to prevent shunting of the solar cells, to improve reliability and long-term stability of the solar cells and to provide a uniform doping of the CdTe layer. This is achieved by applying a sacrificial doping layer between a first CdTe layer having large grains and a second CdTe layer having small grains, which together form the CdTe layer of the solar cells. Furthermore it provides the possibility to eliminate the CdCl2 activation treatment step in case the sacrificial doping layer comprises a halogen.Type: GrantFiled: April 16, 2015Date of Patent: February 20, 2018Assignees: China Triumph International Engineering Co., Ltd., CTF Solar GmbHInventors: Krishnakumar Velappan, Shou Peng
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Publication number: 20160308086Abstract: The present invention proposes a method to produce thin film CdTe solar cells having a pin-hole free and uniformly doped CdTe layer with a reduced layer thickness. The method according to the present invention is an efficient way to prevent shunting of the solar cells, to improve reliability and long-term stability of the solar cells and to provide a uniform doping of the CdTe layer. This is achieved by applying a sacrificial doping layer between a first CdTe layer having large grains and a second CdTe layer having small grains, which together form the CdTe layer of the solar cells. Furthermore it provides the possibility to eliminate the CdCl2 activation treatment step in case the sacrificial doping layer comprises a halogen.Type: ApplicationFiled: April 16, 2015Publication date: October 20, 2016Inventors: Krishnakumar Velappan, Shou Peng
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Publication number: 20160240715Abstract: A method to produce thin film solar cells in superstrate or substrate configuration is an efficient way to minimize the loss due to absorption in CdS layer and to eliminate the CdCl2 activation treatment step. This is achieved by applying a sacrificial metal-halide layer between the CdS-layer and the CdTe-layer of the solar cells.Type: ApplicationFiled: August 27, 2014Publication date: August 18, 2016Applicants: CHINA TRIUMPH INTERNATIONAL ENGINEERING CO., LTD., CTF SOLAR GMBHInventors: Krishnakumar VELAPPAN, Bastian SIEPCHEN, Bettina SPÄTH, Christian DROST, Shou PENG