Patents by Inventor Krishnaswarny Ramkumar

Krishnaswarny Ramkumar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory transistor with multiple charge storing layers and a high work function gate electrode
    Patent number: 10903325
    Abstract: An example memory device includes a channel positioned between and electrically connecting a first diffusion region and a second diffusion region, and a tunnel dielectric layer, a multi-layer charge trapping layer, and a blocking dielectric layer disposed between the gate structure and the channel. The multi-layer charge trapping layer includes a first dielectric layer disposed abutting a second dielectric layer and an anti-tunneling layer disposed between the first and second dielectric layers. The anti-tunneling layer includes an oxide layer. The first dielectric layer includes oxygen-rich nitride and the second dielectric layer includes oxygen-lean nitride.
    Type: Grant
    Filed: June 3, 2019
    Date of Patent: January 26, 2021
    Assignee: LONGITUDE FLASH MEMORY SOLUTIONS LTD.
    Inventors: Igor Polishchuk, Sagy Charel Levy, Krishnaswarny Ramkumar
  • MEMORY TRANSISTOR WITH MULTIPLE CHARGE STORING LAYERS AND A HIGH WORK FUNCTION GATE ELECTRODE
    Publication number: 20200013863
    Abstract: An example memory device includes a channel positioned between and electrically connecting a first diffusion region and a second diffusion region, and a tunnel dielectric layer, a multi-layer charge trapping layer, and a blocking dielectric layer disposed between the gate structure and the channel. The multi-layer charge trapping layer includes a first dielectric layer disposed abutting a second dielectric layer and an anti-tunneling layer disposed between the first and second dielectric layers. The anti-tunneling layer includes an oxide layer. The first dielectric layer includes oxygen-rich nitride and the second dielectric layer includes oxygen-lean nitride.
    Type: Application
    Filed: June 3, 2019
    Publication date: January 9, 2020
    Inventors: Igor Polishchuk, Sagy Charel Levy, Krishnaswarny Ramkumar