Abstract: An abrasive composition comprising composite non-polymeric organic particles that is useful for chemical mechanical planarization (CMP), and which can widely be used in the semiconductor industry. The composite particles individually contain at least one nonpolymeric organic component and at least one other chemical component different from the at least one nonpolymeric organic component. The slurry composition can be vastly simplified if one or more of the components are incorporated into the abrasive particles. The abrasive compositions provide an efficient polishing rate, excellent selectivity and good surface quality when utilized as a new abrasive composition in CMP applications.

Abstract: An abrasive composition comprising composite non-polymeric organic particles that is useful for chemical mechanical planarization (CMP), and which can widely be used in the semiconductor industry. The composite particles individually contain at least one nonpolymeric organic component and at least one other chemical component different from the at least one nonpolymeric organic component. The slurry composition can be vastly simplified if one or more of the components are incorporated into the abrasive particles. The abrasive compositions provide an efficient polishing rate, excellent selectivity and good surface quality when utilized as a new abrasive composition in CMP applications.

Abstract: An abrasive composition comprising non-polymeric organic particles that is useful for chemical mechanical planarization (CMP), and which can widely be used in the semiconductor industry. The inventive compositions preferably comprise soft water in combination with 0.001–20 w/w % of non-polymeric organic particles, 0.1–10 w/w % of an oxidizing agent, 0.05–10 w/w % of a chelating agent, 0.01–10 w/w % of a surfactant, and 0–10 w/w % of a passivation agent at a pH in the range of 2–12, wherein said percentages are w/w (weight/weight) percentages, based on the total weight of said compositions. The abrasive compositions provide an efficient polishing rate, excellent selectivity and good surface quality when utilized as a new abrasive composition in CMP applications.

Abstract: An abrasive composition comprising non-polymeric organic particles that is useful for chemical mechanical planarization (CMP), and which can widely be used in the semiconductor industry. The inventive compositions preferably comprise soft water in combination with 0.001-20 w/w % of non-polymeric organic particles, 0.1-10 w/w % of an oxidizing agent, 0.05-10 w/w % of a chelating agent, 0.01-10 w/w % of a surfactant, and 0-10 w/w % of a passivation agent at a pH in the range of 2-12, wherein said percentages are w/w (weight/weight) percentages, based on the total weight of said compositions. The abrasive compositions provide an efficient polishing rate, excellent selectivity and good surface quality when utilized as a new abrasive composition in CMP applications.