Abstract: A method of fabricating semiconductor heterostructures including the steps of: (a) positioning a silicon wafer in a suitable environment and (b) processing the silicon substrate by applying several processing steps. A first optional processing step includes growing a graded buffer layer on a silicon substrate by low-energy plasma-enhanced chemical vapor deposition (LEPECVD). A second processing step includes growing a constant composition buffer layer by LEPECVD. A third processing step includes subjecting the surface of the strain-relaxed buffer layer to a deposition process for a period of time and under prescribed conditions, in order to grow at least one additional layer. Subsequently, devices may be processed from the grown layer stack by using a prescribed sequence of steps including non-standard CMOS processes.

Abstract: A millimeter or microwave oscillator device for a receiver or a transmitter is described. The oscillator device including a high frequency oscillating circuit including an active device 41; said active device 41 having a first and a second contact 56, 52, a signal line 49 of said oscillator device 41 being connected to said first contact 56 for connection to a load circuit 43; a biasing circuit 47 for said active device; and a low frequency oscillation suppression circuit; wherein said low frequency oscillation suppression circuit includes a decoupling capacitor 45 and one electrode of said decoupling capacitor 45 is connected to said second contact 52. A manufacturing method for the oscillator device is also disclosed.