Patents by Inventor Kristen C. Scheer

Kristen C. Scheer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming a uniform distribution of nitrogen in silicon oxynitride gate dielectric
    Patent number: 6930060
    Abstract: Methods for preparing a silicon oxynitride layer where the silicon oxynitride layer is deposited atop a substrate and have a low concentration of nitrogen at the interface of the silicon oxynitride layer and the substrate. The silicon oxynitride layer is formed by pulsing at least one interface precursor onto a substrate, where said substrate chemisorbs a portion of said at least one interface precursor to form a monolayer of said at least one interface precursor; and pulsing a nitrogen-containing precursor onto said substrate containing said monolayer of interface precursor, where said monolayer of said at least one interface precursor chemisorbs a portion of said nitrogen-containing precursor to form a monolayer of said nitrogen-containing precursor. The interface precursor includes oxygen-containing or silicon-containing precursor gasses.
    Type: Grant
    Filed: June 18, 2003
    Date of Patent: August 16, 2005
    Assignee: International Business Machines Corporation
    Inventors: Anthony I. Chou, Michael P. Chudzik, Toshiharu Furukawa, Oleg Gluschenkov, Paul D. Kirsch, Kristen C. Scheer, Joseph Shepard, Jr.
  • METHOD FOR FORMING A UNIFORM DISTRIBUTION OF NITROGEN IN SILICON OXYNITRIDE GATE DIELECTRIC
    Publication number: 20040256664
    Abstract: Methods for preparing a silicon oxynitride layer where the silicon oxynitride layer is deposited atop a substrate and have a low concentration of nitrogen at the interface of the silicon oxynitride layer and the substrate. The silicon oxynitride layer is formed by pulsing at least one interface precursor onto a substrate, where said substrate chemisorbs a portion of said at least one interface precursor to form a monolayer of said at least one interface precursor; and pulsing a nitrogen-containing precursor onto said substrate containing said monolayer of interface precursor, where said monolayer of said at least one interface precursor chemisorbs a portion of said nitrogen-containing precursor to form a monolayer of said nitrogen-containing precursor. The interface precursor includes oxygen-containing or silicon-containing precursor gasses.
    Type: Application
    Filed: June 18, 2003
    Publication date: December 23, 2004
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Anthony I. Chou, Michael P. Chudzik, Toshiharu Furukawa, Oleg Gluschenkov, Paul D. Kirsch, Kristen C. Scheer, Joseph Shepard