Abstract: For contacting a silicon solar cell a pre-processed silicon substrate with a frontside and a backside is provided. Then, aluminum is deposited on the backside of the pre-processed silicon substrate, wherein aluminum-free regions remain on the backside. Then, a silver-free layer suitable for soldering on the backside of the silicon substrate is deposited so that the silver-free layer suitable for soldering covers at least the aluminum-free regions on the backside.

Abstract: A semiconductor component, in particular in the form of a solar cell, comprises a two-dimensional semiconductor substrate with a first side, a second side which is arranged opposite thereto, a surface normal which is perpendicular to said first and second sides, and a plurality of recesses which are at least arranged on the second side and extend in the direction of the surface normal, at least one dielectric passivation layer which is arranged on the second side, an electrically conducting contact layer arranged on the passivation layer, a plurality of contact elements for electrically connecting the contact layer with the semiconductor substrate, which contact elements are electrically conductive, are in electrically conducting connection with both the semiconductor substrate and with the contact layer, fill at least 50%, in particular at least 90%, preferably 100% of in each case one of the recesses, project beyond the recesses with a projection in the direction perpendicular to the surface normal and are

Abstract: For contacting a silicon solar cell a pre-processed silicon substrate with a frontside and a backside is provided. Then, aluminum is deposited on the backside of the pre-processed silicon substrate, wherein aluminum-free regions remain on the backside. Then, a silver-free layer suitable for soldering on the backside of the silicon substrate is deposited so that the silver-free layer suitable for soldering covers at least the aluminum-free regions on the backside.

Abstract: A method for producing a semiconductor component with an easily solderable contact structure comprising the provision of a semiconductor substrate of a planar design with a first side, a second side, a surface normal standing vertically thereon, a dielectric passivation layer arranged on at least one of the sides and a first contact layer arranged on passivation layer, the application, at least in some areas, of at least one second contact layer onto the first contact layer, the at least one second contact layer comprising at least a partial layer made of an easily solderable metal, especially of nickel and/or silver and/or tin and/or a compound thereof, and the making of an electrically conductive contact between the second contact layer and the semiconductor substrate.

Abstract: A semiconductor component, especially in the form of a solar cell, comprises a semiconductor substrate of a planar design having a first side, a second side lying opposite thereto and a surface normal standing vertically on sides and, at least one dielectric passivation layer arranged on the second side, at least one electrically conductive contact layer arranged on the passivation layer, a well solderable cover layer arranged on the contact layer and an adhesive layer arranged between the cover layer and the contact layer.

Abstract: A semiconductor component, in particular in the form of a solar cell, comprises a two-dimensional semiconductor substrate with a first side, a second side which is arranged opposite thereto, a surface normal which is perpendicular to said first and second sides, and a plurality of recesses which are at least arranged on the second side and extend in the direction of the surface normal, at least one dielectric passivation layer which is arranged on the second side, an electrically conducting contact layer arranged on the passivation layer, a plurality of contact elements for electrically connecting the contact layer with the semiconductor substrate, which contact elements are electrically conductive, are in electrically conducting connection with both the semiconductor substrate and with the contact layer, fill at least 50 %, in particular at least 90%, preferably 100% of in each case one of the recesses, project beyond the recesses with a projection in the direction perpendicular to the surface normal and are