Abstract: In an example, a substrate is oriented to a target axis, wherein a residual angular misalignment between the target axis and a preselected crystal channel direction in the substrate is within an angular tolerance interval. Dopant ions are implanted into the substrate using an ion beam that propagates along an ion beam axis. The dopant ions are implanted at implant angles between the ion beam axis and the target axis. The implant angles are within an implant angle range. A channel acceptance width is effective for the preselected crystal channel direction. The implant angle range is greater than 80% of a sum of the channel acceptance width and twofold the angular tolerance interval. The implant angle range is smaller than 500% of the sum of the channel acceptance width and twofold the angular tolerance interval.

Abstract: In an example, a substrate is oriented to a target axis, wherein a residual angular misalignment between the target axis and a preselected crystal channel direction in the substrate is within an angular tolerance interval. Dopant ions are implanted into the substrate using an ion beam that propagates along an ion beam axis. The dopant ions are implanted at implant angles between the ion beam axis and the target axis. The implant angles are within an implant angle range. A channel acceptance width is effective for the preselected crystal channel direction. The implant angle range is greater than 80% of a sum of the channel acceptance width and twofold the angular tolerance interval. The implant angle range is smaller than 500% of the sum of the channel acceptance width and twofold the angular tolerance interval.

Abstract: The disclosure relates to a method for manufacturing a contact on a silicon carbide semiconductor substrate and to a silicon carbide semiconductor device comprising a crystalline silicon carbide semiconductor substrate and a contact layer directly in contact with the silicon carbide semiconductor substrate surface and having, at an interface to the semiconductor substrate, a contact phase portion comprising at least a metal, silicon, and carbon. The method comprises the acts of providing a crystalline silicon carbide semiconductor substrate, depositing a metallic contact material layer onto the crystalline silicon carbide semiconductor substrate, and irradiating at least a part of the silicon carbide semiconductor substrate and at least a part of the metallic contact material layer at their interface with at least one thermal annealing laser beam, thereby generating a contact phase portion at the interface, wherein the contact phase portion comprises at least a metal, silicon, and carbon.

Abstract: A method of manufacturing a semiconductor device includes forming a trench that extends from a first surface into a silicon carbide body. A first doped region and an oppositely doped second doped region are formed in the silicon carbide body. A lower layer structure is formed on a lower sidewall portion of the trench. An upper layer stack is formed on an upper sidewall portion and/or on the first surface. The first doped region and the upper layer stack are in direct contact along the upper sidewall portion and/or on the first surface. The second doped region and the lower layer structure are in direct contact along the lower sidewall portion.

Abstract: A semiconductor device includes a semiconductor substrate and a metal nitride layer above the semiconductor substrate. The metal nitride layer forms at least one interface region with the semiconductor substrate. The at least one interface region includes a first portion of the semiconductor substrate, a first portion of the metal nitride layer, and an interface between the first portion of the semiconductor substrate and the first portion of the metal nitride layer. A concentration of nitrogen content at the first portion of the metal nitride layer is higher than a concentration of nitrogen content at a second portion, of the metal nitride layer, outside the interface region. A distribution of nitrogen content throughout the metal nitride layer may have a maximum concentration at the first portion of the metal nitride layer. Alternatively and/or additionally, a method for producing such a semiconductor device is provided herein.

Abstract: A method of manufacturing a metal silicide layer comprises performing laser thermal annealing of a surface region of a silicon carbide (SiC) substrate, exposing a surface of a thus obtained silicon layer, depositing a metal layer above the exposed silicon layer, and/or thermally treating a stack of layers, comprising the silicon layer and the metal layer, to form a metal silicide layer. Alternatively and/or additionally, the method may comprise depositing a silicon layer above a SiC substrate, depositing a metal layer, and/or performing laser thermal annealing of the SiC substrate and a stack of layers above the SiC substrate to form a metal silicide layer, wherein the stack of layers comprises the silicon layer and the metal layer. Moreover, a semiconductor device is described, comprising a SiC substrate, a metal silicide layer, and a polycrystalline layer in direct contact with the SiC substrate and the metal silicide layer.

Abstract: In an example, a substrate is oriented to a target axis, wherein a residual angular misalignment between the target axis and a preselected crystal channel direction in the substrate is within an angular tolerance interval. Dopant ions are implanted into the substrate using an ion beam that propagates along an ion beam axis. The dopant ions are implanted at implant angles between the ion beam axis and the target axis. The implant angles are within an implant angle range. A channel acceptance width is effective for the preselected crystal channel direction. The implant angle range is greater than 80% of a sum of the channel acceptance width and twofold the angular tolerance interval. The implant angle range is smaller than 500% of the sum of the channel acceptance width and twofold the angular tolerance interval.