Abstract: An optoelectronic component includes a housing having an electrically conductive first contact section, and an optoelectronic semiconductor chip arranged on the first contact section, wherein the optoelectronic semiconductor chip and the first contact section are at least partly covered by a first layer including a silicone, a second layer including SiO2 is arranged at a surface of the first layer, the second layer has a thickness of 10 nm to 1 ?m, and a third layer is arranged above the second layer.

Abstract: An optoelectronic component includes a housing having an electrically conductive first contact section, and an optoelectronic semiconductor chip arranged on the first contact section, wherein the optoelectronic semiconductor chip and the first contact section are at least partly covered by a first layer including a silicone, a second layer including SiO2 is arranged at a surface of the first layer, the second layer has a thickness of 10 nm to 1 ?m, and a third layer is arranged above the second layer.

Abstract: An optoelectronic component includes a semiconductor chip that emits a primary radiation in the short-wave blue spectral range at a dominant wavelength of less than approximately 465 nm; and a phosphor that converts at least part of the primary radiation into a longer-wave secondary radiation in the green spectral range at a dominant wavelength of between approximately 490 nm and approximately 550 nm and at least partly surrounds the semiconductor chip, wherein a mixed light composed of primary radiation and secondary radiation has a dominant wavelength at wavelengths of approximately 460 nm to approximately 480 nm such that a luminous flux of the mixed light is up to 130% greater than a luminous flux in an optoelectronic component without a phosphor having the same dominant wavelength in a range of 460 nm to 480 nm, and the phosphor is arranged in a lamina that bears directly on the semiconductor chip.

Abstract: An optoelectronic component includes a semiconductor chip, and a phosphor at least partly surrounding the semiconductor chip, wherein 1) the semiconductor chip emits a primary radiation in a short-wave blue spectral range at a dominant wavelength of less than approximately 465 nm, and wherein the phosphor converts at least part of the primary radiation into a longer-wave secondary radiation in a green spectral range at a dominant wavelength of approximately 490 nm to approximately 550 nm, and 2) a mixed light composed of primary radiation and secondary radiation has a dominant wavelength at wavelengths of approximately 460 nm to approximately 480 nm such that luminous flux of the mixed light is up to 130% greater than luminous flux of an optoelectronic component without a phosphor having the same dominant wavelength of 460 nm to 460 nm.