Patents by Inventor Kristin Joy Duxstad

Kristin Joy Duxstad has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • TMR sensor with oxidized alloy barrier layer and method for forming the same
    Patent number: 7183893
    Abstract: A tunneling magnetoresistive stack includes a first ferromagnetic layer, a tunnel barrier layer on the first ferromagnetic layer, and a second ferromagnetic layer on the tunnel barrier layer. The tunneling magnetoresistive stack exhibits a negative exchange coupling between the first ferromagnetic layer and the second ferromagnetic layer indicating that the tunneling magnetoresistive stack has a high quality tunnel barrier layer.
    Type: Grant
    Filed: February 4, 2004
    Date of Patent: February 27, 2007
    Assignee: Seagate Technology LLC
    Inventors: Peter Hampden Clifton, Eric Walter Singleton, David James Larson, Brian William Karr, Kristin Joy Duxstad
  • Method of forming a tunneling magnetoresistive head
    Patent number: 7097745
    Abstract: A method of forming a tunneling magnetoresistive head begins by forming a tunneling magnetoresistive stack having a tunnel barrier. An air bearing surface is formed of the tunneling magnetoresistive stack. The air bearing surface is ion etched causing a deficiency of a constituent in a portion of the tunnel barrier adjacent the air bearing surface. The deficiency of the constituent is replenished in the portion of the tunnel barrier adjacent the air bearing surface to restore the electrical properties of the tunnel barrier.
    Type: Grant
    Filed: June 27, 2003
    Date of Patent: August 29, 2006
    Assignee: Seagate Technology, LLC
    Inventors: Joel William Hoehn, Cyril Peter DeVries, Kristin Joy Duxstad, Harry Sam Edelman
  • Method of forming a tunneling magnetoresistive head
    Publication number: 20040262258
    Abstract: A method of forming a tunneling magnetoresistive head begins by forming a tunneling magnetoresistive stack having a tunnel barrier. An air bearing surface is formed of the tunneling magnetoresistive stack. The air bearing surface is ion etched causing a deficiency of a constituent in a portion of the tunnel barrier adjacent the air bearing surface. The deficiency of the constituent is replenished in the portion of the tunnel barrier adjacent the air bearing surface to restore the electrical properties of the tunnel barrier.
    Type: Application
    Filed: June 27, 2003
    Publication date: December 30, 2004
    Applicant: Seagate Technology LLC
    Inventors: Joel William Hoehn, Cyril Peter DeVries, Kristin Joy Duxstad, Harry Sam Edelman
  • Spin valve structures with specular reflection layers
    Patent number: 6795279
    Abstract: This invention presents a method and structure for magnetic spin valves. The spin valve structure includes a first ferromagnetic layer separated from a second ferromagnetic layer by a non-magnetic layer. The spin valve structure also includes a first specular scattering layer separated from a second specular scattering layer by the first ferromagnetic layer, the non-magnetic layer, and the second ferromagnetic layer. The first ferromagnetic layer can include a free layer and the non-magnetic layer can include a spacer layer. The second ferromagnetic layer can include a pinned layer or a reference layer. The specular scattering layers can include a material such as Y2O3, HfO2, MgO, Al2O3, NiO, Fe2O3, and Fe3O4. The specular scattering layers can also be used in a SAF structure. In the SAF structure, the antiferromagnetic coupling material can be co-deposited with the second specular scattering layer.
    Type: Grant
    Filed: January 9, 2004
    Date of Patent: September 21, 2004
    Assignee: Seagate Technology LLC
    Inventors: Eric W. Singleton, Kristin Joy Duxstad, Michael B. Hintz
  • Spin valve structures with specular reflection layers
    Publication number: 20040141258
    Abstract: This invention presents a method and structure for magnetic spin valves. The spin valve structure includes a first ferromagnetic layer separated from a second ferromagnetic layer by a non-magnetic layer. The spin valve structure also includes a first specular scattering layer separated from a second specular scattering layer by the first ferromagnetic layer, the non-magnetic layer, and the second ferromagnetic layer. The first ferromagnetic layer can include a free layer and the non-magnetic layer can include a spacer layer. The second ferromagnetic layer can include a pinned layer or a reference layer. The specular scattering layers can include a material such as Y2O3, HfO2, MgO, Al2O3, NiO, Fe2O3, and Fe3O4. The specular scattering layers can also be used in a SAF structure. In the SAF structure, the antiferromagnetic coupling material can be co-deposited with the second specular scattering layer.
    Type: Application
    Filed: January 9, 2004
    Publication date: July 22, 2004
    Applicant: Seagate Technology LLC
    Inventors: Eric W. Singleton, Kristin Joy Duxstad, Michael B. Hintz
  • Spin valve structures with specular reflection layers
    Patent number: 6700753
    Abstract: This invention presents a method and structure for magnetic spin valves. The spin valve structure includes a first ferromagnetic layer separated from a second ferromagnetic layer by a non-magnetic layer. The spin valve structure also includes a first specular scattering layer separated from a second specular scattering layer by the first ferromagnetic layer, the non-magnetic layer, and the second ferromagnetic layer. The first ferromagnetic layer can include a free layer and the non-magnetic layer can include a spacer layer. The second ferromagnetic layer can include a pinned layer or a reference layer. The specular scattering layers can include a material such as Y2O3, HfO2, MgO, Al2O3, NiO, Fe2O3, and Fe3O4. The specular scattering layers can also be used in a SAF structure. In the SAF structure, the antiferromagnetic coupling material can be co-deposited with the second specular scattering layer.
    Type: Grant
    Filed: April 12, 2001
    Date of Patent: March 2, 2004
    Assignee: Seagate Technology LLC
    Inventors: Eric W. Singleton, Kristin Joy Duxstad, Michael B. Hintz
  • Spin valve structures with specular reflection layers
    Publication number: 20020012207
    Abstract: This invention presents a method and structure for magnetic spin valves. The spin valve structure includes a first ferromagnetic layer separated from a second ferromagnetic layer by a non-magnetic layer. The spin valve structure also includes a first specular scattering layer separated from a second specular scattering layer by the first ferromagnetic layer, the non-magnetic layer, and the second ferromagnetic layer. The first ferromagnetic layer can include a free layer and the non-magnetic layer can include a spacer layer. The second ferromagnetic layer can include a pinned layer or a reference layer. The specular scattering layers can include a material such as Y2O3, HfO2, MgO, Al2O3, NiO, Fe2O3, and Fe3O4. The specular scattering layers can also be used in a SAF structure. In the SAF structure, the antiferromagnetic coupling material can be co-deposited with the second specular scattering layer.
    Type: Application
    Filed: April 12, 2001
    Publication date: January 31, 2002
    Inventors: Eric W. Singleton, Kristin Joy Duxstad, Michael B. Hintz