Abstract: A nanophononic metamaterial-based thermoelectric energy conversion device and processes for fabricating a nanophononic metamaterial-based thermoelectric energy conversion device is provided. In one implementation, for example, a nanophononic metamaterial-based thermoelectric energy conversion device includes a first conductive pad, a second conductive pad, and a plurality of strip units. In one implementation, the first conductive pad is coupled to a first connection of the thermoelectric energy conversion device, and the second conductive pad is coupled to a second connection of the thermoelectric energy conversion device. The plurality of strip units are connected in series between the first and second conductive pads and provide a parallel heat transfer pathway. The strip units include a nanostructure design comprising a nanophononic metamaterial.

Abstract: A nanophononic metamaterial-based thermoelectric energy conversion device and processes for fabricating a nanophononic metamaterial-based thermoelectric energy conversion device is provided. In one implementation, for example, a nanophononic metamaterial-based thermoelectric energy conversion device includes a first conductive pad, a second conductive pad, and a plurality of strip units. In one implementation, the first conductive pad is coupled to a first connection of the thermoelectric energy conversion device, and the second conductive pad is coupled to a second connection of the thermoelectric energy conversion device. The plurality of strip units are connected in series between the first and second conductive pads and provide a parallel heat transfer pathway. The strip units include a nanostructure design comprising a nanophononic metamaterial.

Abstract: A nanowire article includes a substrate; a plurality of nanowires disposed on the substrate, the nanowires comprising a semiconductor nitride, the semiconductor comprising an element selected from group 3 of the periodic table; and a superlattice layer interposed between the substrate and the plurality of gallium nitride nanowires. A process for producing a nanowire article includes disposing a superlattice layer on a substrate; disposing a first buffer layer on the superlattice layer; contacting the first buffer layer with a precursor; and forming a plurality of nanowires from the precursor on the first buffer layer to form the nanowire article, the nanowires comprising a semiconductor nitride, the semiconductor comprising an element selected from group 3 of the periodic table.

Abstract: A nanowire article includes a substrate; a plurality of nanowires disposed on the substrate, the nanowires comprising a semiconductor nitride, the semiconductor comprising an element selected from group 3 of the periodic table; and a superlattice layer interposed between the substrate and the plurality of gallium nitride nanowires. A process for producing a nanowire article includes disposing a superlattice layer on a substrate; disposing a first buffer layer on the superlattice layer; contacting the first buffer layer with a precursor; and forming a plurality of nanowires from the precursor on the first buffer layer to form the nanowire article, the nanowires comprising a semiconductor nitride, the semiconductor comprising an element selected from group 3 of the periodic table.

Abstract: A scanning probe microscopy instrument includes a cantilevered tip that has a nanowire light emitting diode (LED).

Abstract: A scanning probe microscopy instrument includes a cantilevered tip that has a nanowire light emitting diode (LED).

Abstract: This invention provides an inexpensive, noninvasive optical method of quantitatively determining the volume fraction of anisotropic material in a mixture of anisotropic and isotropic material, and more particularly for determining the volume fraction of noncubic crystalline material in a mixed-phase specimen having noncubic crystalline material intermixed with cubic crystalline material. Polarized light is impinged on the specimen and the reflectance or transmission difference between two orthogonal polarization directions is measured. In cubic regions the reflectance or transmission is the same along both polarization directions so the contributions to the difference cancel, leaving a signal only from the noncubic regions. The optical difference can be measured as a function of wavelength and critical points in the band structure, including the band gap, can be profiled. From the band structure the film composition can be determined.