Patents by Inventor Kristopher Matthews

Kristopher Matthews has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Gallium-nitride-on-diamond wafers and manufacturing equipment and methods of manufacture
    Patent number: 9359693
    Abstract: A method for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers, with synthetic diamond substrates is disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.
    Type: Grant
    Filed: February 28, 2013
    Date of Patent: June 7, 2016
    Assignee: ELEMENT SIX TECHNOLOGIES US CORPORATION
    Inventors: Daniel Francis, Firooz Faili, Kristopher Matthews, Frank Yantis Lowe, Quentin Diduck, Sergey Zaytsev, Felix Ejeckam
  • SEMICONDUCTOR DEVICES WITH IMPROVED RELIABILITY AND OPERATING LIFE AND METHODS OF MANUFACTUIRNG THE SAME
    Publication number: 20150279945
    Abstract: Methods for manufacturing semiconductor wafer structures are described which exhibit improved lifetime and reliability. The methods comprise transferring an active semiconductor layer structure from a native non-lattice-matched semiconductor growth substrate to a working substrate, wherein strain-matching layers, and optionally a portion of the active semiconductor layer structure, are removed. In certain embodiment, the process of attaching the active semiconductor layer structure to the working substrate includes annealing at an elevated temperature for a specified time.
    Type: Application
    Filed: October 25, 2013
    Publication date: October 1, 2015
    Inventors: Daniel Francis, Dubravko Babic, Firooz Nasser-Faili, Felix Ejeckham, Quentin Diduck, Joseph Smart, Kristopher Matthews, Frank Lowe
  • Gallium-Nitride-On-Diamond Wafers and Manufacturing Equipment and Methods of Manufacture
    Publication number: 20130298823
    Abstract: A method for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers, with synthetic diamond substrates is disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.
    Type: Application
    Filed: February 28, 2013
    Publication date: November 14, 2013
    Inventors: Daniel Francis, Firooz Faili, Kristopher Matthews, Frank Yantis Lowe, Quentin Diduck, Sergey Zaytsev, Felix Ejeckam