Abstract: In one embodiment, a ground-based sky imaging and irradiance measurement and prediction computing device: obtains, from an omnidirectional ultra-panoramic camera located at a ground-based mounting location, an image having a view of an entire sky located above the camera and a horizon-to-horizon view of ground and ground-based objects surrounding the camera; calibrates a relationship between locations of pixels of the image and real-world three-dimensional coordinates based on intrinsic/extrinsic properties of the camera; identifies image pixels that contain clouds; georegisters, the clouds to real-world three-dimensional coordinates; and estimates, cloud attenuation levels. A solar irradiance map can then be generated based on the georegistration of the clouds, sun position, and estimated attenuation level of the clouds, where the solar irradiance map indicates an estimation of solar irradiance to reach an area of ground surrounding the camera.

Abstract: A method for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers, with synthetic diamond substrates is disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.

Abstract: Methods for manufacturing semiconductor wafer structures are described which exhibit improved lifetime and reliability. The methods comprise transferring an active semiconductor layer structure from a native non-lattice-matched semiconductor growth substrate to a working substrate, wherein strain-matching layers, and optionally a portion of the active semiconductor layer structure, are removed. In certain embodiment, the process of attaching the active semiconductor layer structure to the working substrate includes annealing at an elevated temperature for a specified time.

Abstract: A method for integrating wide-gap semiconductors, and specifically, gallium nitride epilayers, with synthetic diamond substrates is disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure that comprises at least one layer of gallium nitride. Methods for manufacturing GaN-on-diamond wafers with low bow and high crystalline quality are disclosed along with preferred choices for manufacturing GaN-on-diamond wafers and chips tailored to specific applications.