Patents by Inventor Kristopher O. Davis

Kristopher O. Davis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method, system and program product for photovoltaic cell monitoring via current-voltage measurements
    Patent number: 9876468
    Abstract: A method, a system and a program product for use when monitoring degradation of a photovoltaic cell each use a plurality of current-voltage curves for the photovoltaic cell obtained at a plurality of predetermined times, where the plurality of current-voltage curves is obtained when the photovoltaic cell (or related module, string or array) is in operational service. The use of such a plurality of current-voltage curves provides for extraction of a plurality of degradation characteristics or parameters for the photovoltaic cell.
    Type: Grant
    Filed: November 19, 2013
    Date of Patent: January 23, 2018
    Assignee: UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC.
    Inventors: Kristopher O. Davis, David K. Click, Robert M. Reedy, Winston V. Schoenfeld
  • METHOD, SYSTEM AND PROGRAM PRODUCT FOR PHOTOVOLTAIC CELL MONITORING VIA CURRENT-VOLTAGE MEASUREMENTS
    Publication number: 20160276976
    Abstract: A method, a system and a program product for use when monitoring degradation of a photovoltaic cell each use a plurality of current-voltage curves for the photovoltaic cell obtained at a plurality of predetermined times, where the plurality of current-voltage curves is obtained when the photovoltaic cell (or related module, string or array) is in operational service. The use of such a plurality of current-voltage curves provides for extraction of a plurality of degradation characteristics or parameters for the photovoltaic cell.
    Type: Application
    Filed: November 19, 2013
    Publication date: September 22, 2016
    Applicant: UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC.
    Inventors: Kristopher O. Davis, David K. Click, Robert M. Reedy, Winston V. Schoenfeld
  • SILICON MATERIAL SUBSTRATE DOPING METHOD, STRUCTURE AND APPLICATIONS
    Publication number: 20140361407
    Abstract: A method for forming a boron doped region within a silicon material substrate, and the resulting silicon material substrate that includes the boron doped region, each use a boron doped aluminum oxide material layer as a boron dopant source layer. The method provides the boron doped region with a sheet resistance in a range from about 15 to about 300 ohms per square. The method is also applicable, in general, to forming an n doped region, a p doped region or an n and p co-doped region within a silicon material substrate.
    Type: Application
    Filed: June 5, 2013
    Publication date: December 11, 2014
    Applicants: SCHMID Group, University of Central Florida Research Foundation Inc.
    Inventors: Kristopher O. Davis, Winston V. Schoenfeld, Kaiyun Jiang, Dirk Habermann