Abstract: An assay cartridge and an assay reader or other system for running an assay on the assay cartridge. The assay cartridge can be configured to perform different types of diagnostic assays, and the assay reader can be configured to run the specific assay for which the assay cartridge is configured, including PCR assays, immunoassays, and electrochemical bioassays. The assay cartridge can be inserted into the assay reader to run an assay. In some embodiments, the assay reader may have a user interface for configuring the assay reader and displaying results. In other embodiments, a phone or other device with a user interface and a diagnostic assay protocol application can communicate with the assay reader to provide the appropriate protocol instructions to run the assay, to collect and analyze data from the assay reader, and to report and store assay results.

Abstract: Devices are disclosed for amplifying and detecting analytes, including oligonucleotide targets. The devices may be used for point of care nucleic acid testing. Methods and assays of using the devices are also disclosed.

Abstract: The present invention relates to compositions on a FET sensor for detecting wide variety of biological entities. The composition of the FET sensor comprises a linker probe having a region for binding a biological entity, and enzymatic region that can cleave or change the position of a cargo molecule bound to the linker probe. The binding of the biological entity may cause a first strand of DNA to dehybridize from a second strand of DNA resulting in a change in conductance of the FET sensor. When the conformation of the probe changes, the conductance of the FET changes. This method provides an advantage over the conventional FET biosensors that use antibodies as probes since the size of nucleotide aptamer probes is smaller, their conformation/shape is well controlled, and their charge is fixed for a wider range of solution conditions, enabling robust detection of target entities with high sensitivity and specificity.

Abstract: A FET sensor with a gate biasing electrode is disclosed in one embodiment. In another embodiment, a process for forming a finFET sensor with a polysilicon gate biasing electrode is disclosed. In a further embodiment, a process for forming a finFET sensor with a single crystal gate biasing electrode is disclosed.