Abstract: Disclosed is a process of making a semiconductor device wherein an insulation layer has a copper plug in contact with the last wiring layer of the device. There may also be a barrier layer separating the copper plug from the insulation layer. There may also be a cap layer over the copper plug to protect it from oxidation. There may also be a dielectric layer over the cap layer.

Abstract: Disclosed is a process of making a semiconductor device wherein an insulation layer has a copper plug in contact with the last wiring layer of the device. There may also be a barrier layer separating the copper plug from the insulation layer. There may also be a cap layer over the copper plug to protect it from oxidation. There may also be a dielectric layer over the cap layer.

Abstract: Disclosed is a semiconductor device wherein an insulation layer has a copper plug in contact with the last wiring layer of the device. There may also be a barrier layer separating the copper plug from the insulation layer. In a further embodiment, there may also be an aluminum layer between the insulation layer and copper plug. Also disclosed is a process for making the semiconductor device.

Abstract: Embodiments of the invention include a lead-free solder interconnect structure and methods for making a lead-free interconnect structure. The structure includes a semiconductor substrate having a last metal layer, a copper pedestal attached to the last metal layer, a barrier layer attached to the copper pedestal, a barrier protection layer attached to the barrier layer, and a lead-free solder layer contacting at least one side of the copper pedestal.

Abstract: A structure. The structure includes a layered configuration including a copper layer, a first layer, and a second layer. The first and second layers are disposed on opposite sides of the copper layer and are in direct mechanical contact with the copper layer. The first and second layers each include a same alloy of nickel and a metal consisting of cobalt, iron, copper, manganese, or molybdenum. A first region in the first layer extends completely through the first layer. A second region in the second layer extends completely through the second layer. A third region in the first layer extends completely through the first layer. The third region does not extend into any portion of the second layer. The first, second region, and third regions each include a photoresist or an opening such that photoresist or opening extends completely through the first, second, and first layer, respectively.

Abstract: An etchant which includes an aqueous solution of between about 30% and about 38% concentrated hydrogen peroxide, said percentages being by volume, based on the total volume of the solution; between about 3.5 ml and about 20 ml per liter of phosphoric acid; and an amount of potassium hydroxide to adjust the pH of the solution to between about 7.8 and about 9.1. The etchant is useful in removing a layer of an alloy of titanium and tungsten or a layer of tungsten from a precision surface.

Abstract: An etchant which includes an aqueous solution of between about 30% and about 38% concentrated hydrogen peroxide, said percentages being by volume, based on the total volume of the solution; between about 3.5 ml and about 20 ml per liter of phosphoric acid; and an amount of potassium hydroxide to adjust the pH of the solution to between about 7.8 and about 9.1. The etchant is useful in removing a layer of an alloy of titanium and tungsten or a layer of tungsten from a precision surface.

Abstract: A structure and associated methods of formation. The structure includes a layered configuration comprising a copper layer, a first layer, and a second layer. The copper layer consists essentially of copper. The first and second layers are disposed on opposite sides of the copper layer and are in direct mechanical contact with the copper layer. The first and second layers each consist essentially of a same alloy of nickel and cobalt having a weight percent concentration of cobalt in a range of 3% to 21%. A through hole in the layered configuration extends completely through the first layer, the copper layer, and the second layer, wherein a first opening in the layered configuration extends completely through the first layer and does not extend into any portion of the second layer.

Abstract: The present invention provides a novel method of etching nickle/iron alloy which employs a novel etchant. The novel etchant, which etches nickle/iron alloy but not copper, comprises an aqueous solution of ferric ammonium sulfate, and an acid selected from the group consisting of: sulfuric acid; phosphoric acid; and mixtures thereof.

Abstract: An electroetching method for removing excess silver-copper braze material from the edges of I/O pads during the manufacture of chip carriers for microelectronic devices, and the product thereby produced, are disclosed. The disclosed method is preferably self-limiting, such that braze material is preferentially removed from all regions of the assembly. The method is particularly useful for producing a desirable sidewall profile, size, and extent of coverage of the I/O pad for the fillet of braze material surrounding the base of pins in a pin grid array device. Agitation control is important for producing the desired uniformity and profile.

Abstract: The present invention provides a novel method of etching nickle/iron alloy which employs a novel etchant. The novel etchant, which etches nickle/iron alloy but not copper, comprises an aqueous solution of ferric ammonium sulfate, and an acid selected from the group consisting of: sulfuric acid; phosphoric acid; and mixtures thereof.