Abstract: A method for repairing a defect on a photomask includes coating a resist on a photomask substrate. The photomask substrate includes phase shift layer patterns formed on the photomask substrate, light blocking layer patterns formed over the phase shift layer patterns and a defect formed between adjacent phase shift layer patterns. The resist is etched to expose the defect such that the photomask substrate is not exposed. The defect is etched to remove the defect. The resist prevents the photomask substrate from being etched. The resist is then removed.

Abstract: The present invention relates to a methods for forming transistor of semiconductor device, and more particularly to a improved method for forming transistor of semiconductor device wherein a thermal oxide film formed on an edge portion of gate electrode by a thermal oxidation process on a gate electrode to reduce parasitic capacitance generated from overlapping between a drain region and a gate electrode region.

Abstract: The present invention relates to a methods for forming transistor of semiconductor device, and more particularly to a improved method for forming transistor of semiconductor device wherein a thermal oxide film formed on an edge portion of gate electrode by a thermal oxidation process on a gate electrode to reduce parasitic capacitance generated from overlapping between a drain region and a gate electrode region.