Patents by Inventor Ku-Ying Tong

Ku-Ying Tong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ruthenium bias compensation layer for spin valve head and process of manufacturing
    Patent number: 6396671
    Abstract: A spin valve structure, and method for manufacturing it, are described. The valve is subject to only small bias point shifts by sense current fields while at the same time has good GMR characteristics. This is achieved by introducing a layer of about 15 Angstroms of ruthenium between the seed layer and the free layer. This acts as an effective bias control layer with the added benefit of providing interfaces (to both the seed and the free layer) that are highly favorable to specular reflection of the conduction electrons. The HCP crystal structure of this ruthenium layer also improves the crystalline quality of the free layer thereby improving its performance with respect to the GMR ratio.
    Type: Grant
    Filed: March 15, 2000
    Date of Patent: May 28, 2002
    Assignee: Headway Technologies, Inc.
    Inventors: Cheng T. Horng, Mao-Min Chen, Kochan Ju, Min Li, Simon H. Liao, Ku-Ying Tong