Abstract: An intelligent teaching and tutoring test method is provided with a remote learning online test mode, a remote learning test paper test mode, a classroom teaching online test mode, and a classroom teaching test paper test mode. Based on the diversified data input methods and intelligent data analyzing process offered by an intelligent teaching and tutoring test system, the invention is a proprietary teaching and tutoring test method for different learners according to their differentiated individual learning situations so as to substantially enhance the learning efficiency of the learners.

Abstract: An interactive learning management method includes abilities to automatically establish group settings on the learning communication mobile application based on the user identities, and to conduct real-time information transmission of class announcements, test paper scores, tutor comments and replies etc, to carry out learning interactions with the teacher by recording video clips of questions and answers, and to download mobile applications for learning via the Internet. The method provides a realization for transmission of learning information and archive photos by the users on the mobile device end through the learning communication mobile application and for downloading remote learning-oriented mobile applications for use, so that users can conduct real-time information notifications or learning through the mobile applications oriented to specific courses on the mobile device without limit of time and place. As a result, learning efficiency can be greatly increased.

Abstract: An intelligent teaching and tutoring test method is provided with a remote learning online test mode, a remote learning test paper test mode, a classroom teaching online test mode, and a classroom teaching test paper test mode. Based on the diversified data input methods and intelligent data analyzing process offered by an intelligent teaching and tutoring test system, the invention is a proprietary teaching and tutoring test method for different learners according to their differentiated individual learning situations so as to substantially enhance the learning efficiency of the learners.

Abstract: In the formation of an interconnect structure, a metal feature is formed in a dielectric layer. An etch stop layer (ESL) is formed over the metal feature and the dielectric layer using a precursor and a carbon-source gas including carbon as precursors. The carbon-source gas is free from carbon dioxide (CO2). The precursor is selected from the group consisting essentially of 1-methylsilane (1MS), 2-methylsilane (2MS), 3-methylsilane (3MS), 4-methylsilane (4MS), and combinations thereof.

Abstract: An e-learning method is provided with allowing a teacher to use remote data processing device to communicate with users over the Internet; allowing the teacher and the users to access an online teaching database over the Internet by using the remote data processing device respectively wherein the online teaching database includes a curriculum server, an examination server, a user records server, and an academic server; allowing the teacher to access the curriculum server by using the remote data processing device; allowing the teacher to access a curriculum or a video from the curriculum server for teaching; allowing the users to access the curriculum server by using the remote data processing device; allowing the users to download the curriculum or the video; allowing the teacher to communicate with the users; and allowing the teacher to designate a user to access the examination server by using the remote data processing device.

Abstract: A method of lithography patterning includes forming a mask layer on a material layer and forming a capping layer on the mask layer. The capping layer is a boron-containing layer with a higher resistance to an etching reaction of patterning process of the material layer. By adapting the boron-containing layer as the capping layer, the thickness of the mask layer can be thus reduced. Hence, a better gap filling for forming an interconnect metallization in the material layer could be achieved as well.

Abstract: A method of fabricating a solar cell is provided. A first type substrate having a first surface and a second surface is provided. A first doping process is performed on the first surface of the first type substrate by using a first dopant, so as to form a first type lightly doped layer. A second doping process is performed on a portion of the first type lightly doped layer by using a second dopant, so as to form a second type heavily doped region. A molecular weight of the second dopant is larger than a molecular weight of the first dopant, and a temperature of the first doping process is higher than a temperature of the second doping process. A first electrode is formed on the second type heavily doped region. A second electrode is formed on the second surface of the first type substrate.

Abstract: In the formation of an interconnect structure, a metal feature is formed in a dielectric layer. An etch stop layer (ESL) is formed over the metal feature and the dielectric layer using a precursor and a carbon-source gas including carbon as precursors. The carbon-source gas is free from carbon dioxide (CO2). The precursor is selected from the group consisting essentially of 1-methylsilane (1MS), 2-methylsilane (2MS), 3-methylsilane (3MS), 4-methylsilane (4MS), and combinations thereof.

Abstract: A method of lithography patterning includes forming a mask layer on a material layer and forming a capping layer on the mask layer. The capping layer is a boron-containing layer with a higher resistance to an etching reaction of patterning process of the material layer. By adapting the boron-containing layer as the capping layer, the thickness of the mask layer can be thus reduced. Hence, a better gap filling for forming an interconnect metallization in the material layer could be achieved as well.

Abstract: An extreme low-k (ELK) dielectric film scheme for advanced interconnects includes an upper ELK dielectric layer and a lower ELK dielectric with different refractive indexes. The refractive index of the upper ELK dielectric layer is greater than the refractive index of the lower ELK dielectric layer.

Abstract: An extreme low-k (ELK) dielectric film scheme for advanced interconnects includes an upper ELK dielectric layer and a lower ELK dielectric with different refractive indexes. The refractive index of the upper ELK dielectric layer is greater than the refractive index of the lower ELK dielectric layer.

Abstract: An integrated circuit includes an etch stop layer over a substrate; a UV blocker layer on the etch stop layer, wherein the UV blocker layer has a high extinction coefficient; and a low-k dielectric layer on the UV blocker layer.

Abstract: An extreme low-k (ELK) dielectric film scheme for advanced interconnects includes an upper ELK dielectric layer and a lower ELK dielectric with different refractive indexes. The refractive index of the upper ELK dielectric layer is greater than the refractive index of the lower ELK dielectric layer.