Abstract: A semiconductor structure includes a substrate, at least one first conductive structure, at least one second conductive structure, at least one first memory structure, and at least one second memory structure. The substrate has an array region and a dummy region. The first conductive structure is disposed on the array region. The second conductive structure is disposed on the dummy region. The first memory structure is disposed on the first conductive structure. The first memory structure includes a first channel layer, and the first channel layer is in contact with the first conductive structure. The second memory structure is disposed on the second conductive structure. The second memory structure includes a second channel layer, and the second channel layer is isolated from the second conductive structure.

Abstract: A semiconductor device includes a semiconductor substrate, a circuit unit and an align mark. The circuit unit is disposed on the semiconductor substrate. The align mark includes a first part and a second part respectively formed in the semiconductor substrate and adjacent to two opposite sides of the circuit unit, wherein the first part and the second part depart from each other for a predetermined distance along with a first direction.

Abstract: A semiconductor device includes a semiconductor substrate, a circuit unit and an align mark. The circuit unit is disposed on the semiconductor substrate. The align mark includes a first part and a second part respectively formed in the semiconductor substrate and adjacent to two opposite sides of the circuit unit, wherein the first part and the second part depart from each other for a predetermined distance along with a first direction.

Abstract: Disclosed is a structure of electrolessly palladium (Pd) and gold (Au) plated films on a bonding pad, comprising a Pd plated layer on the bonding pad; and an Au plated layer on the Pd plated layer. Also disclosed is an assembled structure formed of the electrolessly Pd—Au plated films wire-bonded with a copper (Cu) or Pd—Cu wire to the Au plated layer. In addition, a process for producing the structure of the electrolessly Pd—Au plated films and an assembling process for the assembled structure are disclosed. According to the present invention, the Pd plated layer is used to replace the conventional nickel layer so as to enhance the wire-bonding strength between the Cu or Pd—Cu wire and the bonding pad.