Abstract: A display device includes a first substrate, a light-emitting element, a light conversion layer, and a color filter layer. The light-emitting element is disposed on the first substrate. The light conversion layer is disposed on the light-emitting element. In addition, the color filter layer is overlapped the light-emitting element and the light conversion layer.

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a substrate having a first semiconductor material. A second semiconductor material is disposed on the first semiconductor material and a passivation layer is disposed on the second semiconductor material. A first doped region and a second doped region extend through the passivation layer and into the second semiconductor material. A silicide is arranged within the passivation layer and along tops of the first doped region and the second doped region.

Abstract: A method of manufacturing a gate structure includes at least the following steps. A gate dielectric layer is formed. A work function layer is deposited on the gate dielectric layer. A barrier layer is formed on the work function layer. A metal layer is deposited on the barrier layer to introduce fluorine atoms into the barrier layer. The barrier layer is formed by at least the following steps. A first TiN layer is formed on the work function layer. A top portion of the first TiN layer is converted into a trapping layer, and the trapping layer includes silicon atoms or aluminum atoms. A second TiN layer is formed on the trapping layer.

Abstract: Some embodiments of the present disclosure relate to an integrated chip including an extended via that spans a combined height of a wire and a via and that has a smaller footprint than the wire. The extended via may replace a wire and an adjoining via at locations where the sizing and the spacing of the wire are reaching lower limits. Because the extended via has a smaller footprint than the wire, replacing the wire and the adjoining via with the extended via relaxes spacing and allows the size of the pixel to be further reduced. The extended via finds application for capacitor arrays used for pixel circuits.

Abstract: A semiconductor structures and a method for forming the same are provided. The semiconductor structure includes first nanostructures and second nanostructures spaced apart from the first nanostructures in a first direction. A left-most point of the first nanostructures and a left-most point of the second nanostructures has a first distance in the first direction. The semiconductor structure further includes first source/drain features attached to opposite sides of the first nanostructures in a second direction being orthogonal to the first direction and third nanostructures and fourth nanostructures spaced apart from the third nanostructures in the first direction. A left-most point of the third nanostructures and a left-most point of the fourth nanostructures has a second distance in the first direction. In addition, the third nanostructures are wider than the first nanostructures in the first direction, and the first distance is smaller than the second distance.

Abstract: A gate structure includes a metal layer, a barrier layer, and a work function layer. The barrier layer covers a bottom surface and sidewalls of the metal layer. The barrier layer includes fluorine and silicon, or fluorine and aluminum. The barrier layer is a tri-layered structure. The work function layer surrounds the barrier layer.

Abstract: A semiconductor structure includes a substrate, at least one first conductive structure, at least one second conductive structure, at least one first memory structure, and at least one second memory structure. The substrate has an array region and a dummy region. The first conductive structure is disposed on the array region. The second conductive structure is disposed on the dummy region. The first memory structure is disposed on the first conductive structure. The first memory structure includes a first channel layer, and the first channel layer is in contact with the first conductive structure. The second memory structure is disposed on the second conductive structure. The second memory structure includes a second channel layer, and the second channel layer is isolated from the second conductive structure.

Abstract: A semiconductor device includes a semiconductor substrate, a circuit unit and an align mark. The circuit unit is disposed on the semiconductor substrate. The align mark includes a first part and a second part respectively formed in the semiconductor substrate and adjacent to two opposite sides of the circuit unit, wherein the first part and the second part depart from each other for a predetermined distance along with a first direction.

Abstract: A semiconductor device includes a semiconductor substrate, a circuit unit and an align mark. The circuit unit is disposed on the semiconductor substrate. The align mark includes a first part and a second part respectively formed in the semiconductor substrate and adjacent to two opposite sides of the circuit unit, wherein the first part and the second part depart from each other for a predetermined distance along with a first direction.

Abstract: Disclosed is a structure of electrolessly palladium (Pd) and gold (Au) plated films on a bonding pad, comprising a Pd plated layer on the bonding pad; and an Au plated layer on the Pd plated layer. Also disclosed is an assembled structure formed of the electrolessly Pd—Au plated films wire-bonded with a copper (Cu) or Pd—Cu wire to the Au plated layer. In addition, a process for producing the structure of the electrolessly Pd—Au plated films and an assembling process for the assembled structure are disclosed. According to the present invention, the Pd plated layer is used to replace the conventional nickel layer so as to enhance the wire-bonding strength between the Cu or Pd—Cu wire and the bonding pad.