Patents by Inventor Kuan Chieh LU

Kuan Chieh LU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Material having single crystal perovskite, device including the same, and manufacturing method thereof
    Patent number: 11615955
    Abstract: A method for forming a material having a Perovskite single crystal structure includes alternately growing, on a substrate, each of a plurality of first layers and each of a plurality of second layers having compositions different from the plurality of first layers and forming a material having a Perovskite single crystal structure by annealing the plurality of first layers and the plurality of second layers.
    Type: Grant
    Filed: August 24, 2020
    Date of Patent: March 28, 2023
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Bo-Yu Yang, Minghwei Hong, Jueinai Kwo, Yen-Hsun Lin, Keng-Yung Lin, Hsien-Wen Wan, Chao Kai Cheng, Kuan Chieh Lu
  • MATERIAL HAVING SINGLE CRYSTAL PEROVSKITE, DEVICE INCLUDING THE SAME, AND MANUFACTURING METHOD THEREOF
    Publication number: 20200388490
    Abstract: A method for forming a material having a Perovskite single crystal structure includes alternately growing, on a substrate, each of a plurality of first layers and each of a plurality of second layers having compositions different from the plurality of first layers and forming a material having a Perovskite single crystal structure by annealing the plurality of first layers and the plurality of second layers.
    Type: Application
    Filed: August 24, 2020
    Publication date: December 10, 2020
    Inventors: Bo-Yu YANG, Minghwei HONG, Jueinai KWO, Yen-Hsun LIN, Keng-Yung LIN, Hsien-Wen WAN, Chao Kai CHENG, Kuan Chieh LU
  • Material having single crystal perovskite, device including the same, and manufacturing method thereof
    Patent number: 10755924
    Abstract: A method for forming a material having a Perovskite single crystal structure includes alternately growing, on a substrate, each of a plurality of first layers and each of a plurality of second layers having compositions different from the plurality of first layers and forming a material having a Perovskite single crystal structure by annealing the plurality of first layers and the plurality of second layers.
    Type: Grant
    Filed: April 14, 2017
    Date of Patent: August 25, 2020
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITY
    Inventors: Bo-Yu Yang, Minghwei Hong, Jueinai Kwo, Yen-Hsun Lin, Keng-Yung Lin, Hsien-Wen Wan, Chao Kai Cheng, Kuan Chieh Lu
  • MATERIAL HAVING SINGLE CRYSTAL PEROVSKITE, DEVICE INCLUDING THE SAME, AND MANUFACTURING METHOD THEREOF
    Publication number: 20170352539
    Abstract: A method for forming a material having a Perovskite single crystal structure includes alternately growing, on a substrate, each of a plurality of first layers and each of a plurality of second layers having compositions different from the plurality of first layers and forming a material having a Perovskite single crystal structure by annealing the plurality of first layers and the plurality of second layers.
    Type: Application
    Filed: April 14, 2017
    Publication date: December 7, 2017
    Inventors: Bo-Yu YANG, Minghwei HONG, Jueinai KWO, Yen-Hsun LIN, Keng-Yung LIN, Hsien-Wen WAN, Chao Kai CHENG, Kuan Chieh LU