Abstract: Various embodiments of the present disclosure are directed towards an integrated circuit (IC) including a first IC chip bonded to a second IC chip. The first chip IC includes a first bond structure. The first bond structure includes a first plurality of conductive bond pads and a first plurality of shield structures disposed between adjacent conductive bond pads among the first plurality of conductive bond pads. The second IC chip includes a second bond structure. A bonding interface is disposed between the first bond structure and the second bond structure. The second bond structure includes a second plurality of conductive bond pads and a second plurality of shield structures. The first plurality of conductive bond pads contacts the second plurality of conductive bond pads and the first plurality of shield structures contacts the second plurality of shield structures at the bonding interface.

Abstract: An optical photographing system includes seven lens elements which are, in order from an object side to an image side along an optical path: a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element and a seventh lens element. Each of the seven lens elements has an object-side surface facing toward the object side and an image-side surface facing toward the image side. The object-side surface of the sixth lens element is convex in a paraxial region thereof. At least one of the object-side surface and the image-side surface of at least one lens element of the optical photographing system has at least one inflection point.

Abstract: A first conductive pad disposed over a first side of a substrate in a first direction. A second conductive pad is disposed over a second side of the substrate in the first direction. A through-substrate via (TSV) extends into the substrate in the first direction. The TSV is disposed between the first conductive pad and the second conductive pad in the first direction. An air liner disposed between the TSV and the substrate in a second direction different from the first direction.

Abstract: Semiconductor devices and methods of forming the same are provided. A method according to the present disclosure includes providing a workpiece including a frontside and a backside. The workpiece includes a substrate, a first plurality of channel members over a first portion of the substrate, a second plurality of channel members over a second portion of the substrate, an isolation feature sandwiched between the first and second portions of the substrate. The method also includes forming a joint gate structure to wrap around each of the first and second pluralities of channel members, forming a pilot opening in the isolation feature, extending the pilot opening through the join gate structure to form a gate cut opening that separates the joint gate structure into a first gate structure and a second gate structure, and depositing a dielectric material into the gate cut opening to form a gate cut feature.

Abstract: A photovoltaic cell includes a germanium-containing well embedded in a single crystalline silicon substrate and extending to a proximal horizontal surface of the single crystalline silicon substrate, wherein germanium-containing well includes germanium at an atomic percentage greater than 50%. A silicon-containing capping structure is located on a top surface of the germanium-containing well and includes silicon at an atomic percentage greater than 42%. The silicon-containing capping structure prevents oxidation of the germanium-containing well. A photovoltaic junction may be formed within, or across, the trench by implanting dopants of a first conductivity type and dopants of a second conductivity type.

Abstract: A method of forming a semiconductor device includes forming semiconductor strips protruding above a substrate and isolation regions between the semiconductor strips; forming hybrid fins on the isolation regions, the hybrid fins comprising dielectric fins and dielectric structures over the dielectric fins; forming a dummy gate structure over the semiconductor strip; forming source/drain regions over the semiconductor strips and on opposing sides of the dummy gate structure; forming nanowires under the dummy gate structure, where the nanowires are over and aligned with respective semiconductor strips, and the source/drain regions are at opposing ends of the nanowires, where the hybrid fins extend further from the substrate than the nanowires; after forming the nanowires, reducing widths of center portions of the hybrid fins while keeping widths of end portions of the hybrid fins unchanged, and forming an electrically conductive material around the nanowires.

Abstract: A light-emitting device includes a substrate, a light-emitting diode, a first layer, a color filter layer, and a second layer. The light-emitting diode is disposed on the substrate. The first layer is disposed on the substrate and has an opening. At least a portion of the light-emitting diode is disposed in the opening of the first layer. The color filter layer is disposed on the light-emitting diode. The second layer is disposed on the first layer and has an opening overlapped with the opening of the first layer. The second layer is configured to shield light emitted from the light-emitting diode. In the cross-sectional view of the light-emitting device, the minimum width of the opening of the first layer is less than the minimum width of the opening of the second layer.

Abstract: Semiconductor devices and methods of forming the same are provided. A semiconductor device according to the present disclosure includes channel members over a backside dielectric feature, a gate structure wrapping around the channel members, an epitaxial feature abutting the channel members, a first isolation feature disposed on a first sidewall of the gate structure and extending through the backside dielectric feature, and a second isolation feature disposed on a second sidewall of the gate structure and extending through the backside dielectric feature. A top surface of the first isolation feature is above a top surface of the second isolation feature.

Abstract: An electronic package structure includes first and second package modules combined with each other. The first package module includes a substrate and a first electronic component disposed thereon, at least one second electronic component, and an insulation film. The first electronic component and the second electronic component are adjacent to each other. The insulation film includes a base material and a foam glue body, and the foam glue body is viscous and compressible. The second package module includes a heat dissipation plate and a liquid metal and an insulation protrusion portion disposed thereon. The liquid metal is pressed by the heat dissipation plate and the first electronic component. The insulation protrusion portion covers and abuts against the insulation film to press the foam glue body through the base material so as to deform the foam glue body and enable the foam glue body to cover the second electronic component.

Abstract: Methods, devices, systems, and apparatus including computer-readable mediums for managing error correction coding in memory systems are provided. In one aspect, a memory system includes a system controller configured to communicate with a host device, and a memory device coupled to the system controller. The memory device includes at least one memory and a memory controller coupled to the at least one memory. The memory controller includes an error correction code (ECC) circuit configured to perform error correction coding for data received from at least one of the system controller or the at least one memory.

Abstract: A memory device, an error correction device and an error correction method thereof are provided. The error correction device includes a first error correction decoder and a second error correction decoder. The first error correction decoder performs at least one iteration of a first error correction operation on a data chunk, calculates a counting number of syndrome values equal to a set logic value generated in the at least one iteration of the first error correction operation, and generates a control signal according to the counting number. The second error correction decoder receives the control signal and determines whether to be activated to perform a second error correction operation on the data chunk or not according to the control signal. An error correction ability of the second error correction decoder is higher than an error correction ability of the first error correction decoder.

Abstract: A memory device, an error correction device and an error correction method thereof are provided. The error correction device includes a first error correction decoder and a second error correction decoder. The first error correction decoder performs at least one iteration of a first error correction operation on a data chunk, calculates a counting number of syndrome values equal to a set logic value generated in the at least one iteration of the first error correction operation, and generates a control signal according to the counting number. The second error correction decoder receives the control signal and determines whether to be activated to perform a second error correction operation on the data chunk or not according to the control signal. An error correction ability of the second error correction decoder is higher than an error correction ability of the first error correction decoder.

Abstract: A solid state disk, a data transmitting method and an intermediary controller thereof are provided. The solid state disk includes at least two flash memories, a SSD controller and an intermediary controller. The intermediary controller is connected between the flash memories and the SSD controller. The intermediary controller includes at least two flash interfaces, a customized interface and a data buffering unit. The flash interfaces are connected to the flash memories. The customized interface is connected to the SSD controller. The intermediary controller has a first clock domain and a second clock domain. The first clock domain is used for transmitting data from the flash memories to the data buffering unit. The second clock domain is used for transmitting data from the data buffering unit to the SSD controller. A frequency of the second clock domain is higher than a frequency of the first clock domain.

Abstract: A solid state disk, a data transmitting method and an intermediary controller thereof are provided. The solid state disk includes at least two flash memories, a SSD controller and an intermediary controller. The intermediary controller is connected between the flash memories and the SSD controller. The intermediary controller includes at least two flash interfaces, a customized interface and a data buffering unit. The flash interfaces are connected to the flash memories. The customized interface is connected to the SSD controller. The intermediary controller has a first clock domain and a second clock domain. The first clock domain is used for transmitting data from the flash memories to the data buffering unit. The second clock domain is used for transmitting data from the data buffering unit to the SSD controller. A frequency of the second clock domain is higher than a frequency of the first clock domain.

Abstract: Methods, devices, systems, and apparatus including computer-readable mediums for managing error correction coding in memory systems are provided. In one aspect, a memory system includes a system controller configured to communicate with a host device, and a memory device coupled to the system controller. The memory device includes at least one memory and a memory controller coupled to the at least one memory. The memory controller includes an error correction code (ECC) circuit configured to perform error correction coding for data received from at least one of the system controller or the at least one memory.

Abstract: Methods, devices, systems, and apparatus including computer-readable mediums for managing error correction coding in memory systems are provided. In one aspect, a memory system includes a system controller configured to communicate with a host device, and a memory device coupled to the system controller. The memory device includes at least one memory and a memory controller coupled to the at least one memory. The memory controller includes an error correction code (ECC) circuit configured to perform error correction coding for data received from at least one of the system controller or the at least one memory.

Abstract: Methods, devices, systems, and apparatus including computer-readable mediums for managing error correction coding in memory systems are provided. In one aspect, a memory system includes a system controller configured to communicate with a host device, and a memory device coupled to the system controller. The memory device includes at least one memory and a memory controller coupled to the at least one memory. The memory controller includes an error correction code (ECC) circuit configured to perform error correction coding for data received from at least one of the system controller or the at least one memory.

Abstract: A pharmaceutical composition for use in promoting wound healing and/or accelerating closure of an open wound in a subject in need thereof is disclosed. The composition comprises a therapeutically effective amount of a recombinant polypeptide comprising an amino acid sequence that is at least 80% identical to the amino acid sequence of SEQ ID NO: 2; and a pharmaceutically acceptable vehicle, carrier, diluent, excipients, and/or salt.

Abstract: A pharmaceutical composition for use in promoting wound healing and/or accelerating closure of an open wound in a subject in need thereof is disclosed. The composition comprises a therapeutically effective amount of a recombinant polypeptide comprising an amino acid sequence that is at least 80% identical to the amino acid sequence of SEQ ID NO: 2; and a pharmaceutically acceptable vehicle, carrier, diluent, excipients, and/or salt.

Abstract: An electronic device for finding error locations in a codeword includes a plurality of power control units configured to find error locations in the codeword. The plurality of power control units are coupled in parallel. Each of the plurality of power control units includes a plurality of corresponding input control circuits to individually turn on or off the corresponding power control unit.