Patents by Inventor Kuan-Chu CHEN

Kuan-Chu CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Molybdenum selenide sublayers with controlled thickness in solar cells and methods for forming the same
    Patent number: 10546964
    Abstract: A solar cell with a molybdenum back electrode layer and a molybdenum selenide ohmic contact layer over the molybdenum back electrode, is provided. The molybdenum selenide layer includes an accurately controlled thickness. A distinct interface exists between the molybdenum back electrode layer and the molybdenum silicide layer. The molybdenum silicide layer is produced by forming a molybdenum layer or a molybdenum nitride layer or a molybdenum oxide layer over an initially formed molybdenum layer such that an interface exists between the two layers. A selenization and sulfurization process is carried out to selectively convert the molybdenum-containing layer to molybdenum selenide but not the original molybdenum back electrode layer which remains as a molybdenum layer.
    Type: Grant
    Filed: November 15, 2012
    Date of Patent: January 28, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Shih-Wei Chen, Wen-Chin Lee, Wen-Tsai Yen, Chung-Hsien Wu, Kuan-Chu Chen
  • Sputtering apparatus and method
    Patent number: 9410236
    Abstract: A sputtering apparatus comprises a chamber configured to contain at least one sputter target and at least one substrate to be coated. The chamber has at least one adjustable shielding member defining an adjustable aperture. The member is positioned between the at least one sputter target and the at least one substrate. The aperture is adjustable in at least one of the group consisting of area and shape.
    Type: Grant
    Filed: November 29, 2012
    Date of Patent: August 9, 2016
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wen-Tsai Yen, Chung-Hsien Wu, Shih-Wei Chen, Ying-Hsin Wu, Jui-Fu Hsueh, Kuan-Chu Chen
  • SPUTTERING APPARATUS AND METHOD
    Publication number: 20140144769
    Abstract: A sputtering apparatus comprises a chamber configured to contain at least one sputter target and at least one substrate to be coated. The chamber has at least one adjustable shielding member defining an adjustable aperture. The member is positioned between the at least one sputter target and the at least one substrate. The aperture is adjustable in at least one of the group consisting of area and shape.
    Type: Application
    Filed: November 29, 2012
    Publication date: May 29, 2014
    Applicant: TSMC SOLAR LTD.
    Inventors: Wen-Tsai YEN, Chung-Hsien WU, Shih-Wei CHEN, Ying-Hsin WU, Jui-Fu HSUEH, Kuan-Chu CHEN
  • MOLYBDENUM SELENIDE SUBLAYERS WITH CONTROLLED THICKNESS IN SOLAR CELLS AND METHODS FOR FORMING THE SAME
    Publication number: 20140130856
    Abstract: A solar cell with a molybdenum back electrode layer and a molybdenum selenide ohmic contact layer over the molybdenum back electrode, is provided. The molybdenum selenide layer includes an accurately controlled thickness. A distinct interface exists between the molybdenum back electrode layer and the molybdenum silicide layer. The molybdenum silicide layer is produced by forming a molybdenum layer or a molybdenum nitride layer or a molybdenum oxide layer over an initially formed molybdenum layer such that an interface exists between the two layers. A selenization and sulfurization process is carried out to selectively convert the molybdenum-containing layer to molybdenum selenide but not the original molybdenum back electrode layer which remains as a molybdenum layer.
    Type: Application
    Filed: November 15, 2012
    Publication date: May 15, 2014
    Applicant: TSMC SOLAR LTD.
    Inventors: Shih-Wei CHEN, Wen-Chin LEE, Wen-Tsai YEN, Chung-Hsien WU, Kuan-Chu CHEN