Patents by Inventor Kuan-Chu Kuo

Kuan-Chu Kuo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6169298
    Abstract: A semiconductor light emitting device, such as the light emitting diode (LED) or the laser diode (LD), having a structure in which a light emitting area is a double heterostructure or a multi-layer quantum well structure. The light emitting area is formed on a substrate. Subsequently, an electrically conductive oxide layer as a transparent window layer to eliminate the crowding effect is formed on the light emitting area. The substrate layer consists of a GaAs substrate and a GaAsP layer to increasing the band gap energy of the substrate. The electrically conductive oxide layer is formed of AlZnO(x) material, having a lower electrical resistivity and a high transparency in the visible wavelength region. The window layer is formed using a physical vapor deposition or a metalorganic chemical vapor deposition.
    Type: Grant
    Filed: August 10, 1998
    Date of Patent: January 2, 2001
    Assignee: Kingmax Technology Inc.
    Inventors: Ying-Fu Lin, Liang-Tung Chang, Shiang-Peng Cheng, Kuan-Chu Kuo, Chiao-Yun Lin, Fu-Chou Liu
  • Patent number: 6097041
    Abstract: A light emitting diode includes a semiconductor substrate of a first conductivity type. A first electrode is formed on a part of the substrate. A reflection stack of the first conductivity type is formed on the substrate. An active layer is then formed on the reflection stack. An anti-reflection stack of a second conductivity type is grown on the active layer, and the anti-reflection stack consists of a plurality of layers, wherein each layer has a thickness of (m+1).lambda./2, where m is zero or a positive integer and .lambda. is a wavelength of radiation generated by the active layer. A window layer of the second conductivity type is formed on the anti-reflection stack. A second electrode is then formed on a part of the window layer.
    Type: Grant
    Filed: August 24, 1998
    Date of Patent: August 1, 2000
    Assignee: Kingmax Technology Inc.
    Inventors: Ying-Fu Lin, Liang-Tung Chang, Shiang-Peng Cheng, Kuan-Chu Kuo, Chiao-Yun Lin, Fu-Chou Liu
  • Patent number: 6008507
    Abstract: A structure of a semiconductor light emitting device includes a GaAs substrate, a GaAsP interface substrate, a first cladding layer, an active layer, and a second cladding layer. The GaAsP interface substrate layer is formed on the GaAs substrate, in addition, the GaAsP interface substrate layer formed on the substrate is of a thickness such that the upper surface of the GaAsP interface substrate layer adjacent to the substrate is composed of single crystal. The first cladding layer of a first conductivity is formed on the GaAsP interface substrate layer. The active layer is formed on the first cladding layer, from which the light is generated in the active layer. The second cladding layer of a second conductivity is formed on the active layer.
    Type: Grant
    Filed: September 1, 1998
    Date of Patent: December 28, 1999
    Assignee: Kingmax Technology Inc.
    Inventors: Ying-Fu Lin, Liang-Tung Chang, Shiang-Peng Cheng, Kuan-Chu Kuo, Chiao-Yun Lin, Fu-Chou Liu