Abstract: A bonding structure that may be used to form 3D-IC devices is formed using first oblong bonding pads on a first substrate and second oblong bonding pads one a second substrate. The first and second oblong bonding pads are laid crosswise, and the bond is formed. Viewed in a first cross-section, the first bonding pad is wider than the second bonding pad. Viewed in a second cross-section at a right angle to the first, the second bonding pad is wider than the first bonding pad. Making the bonding pads oblong and angling them relative to one another reduces variations in bonding area due to shifts in alignment between the first substrate and the second substrate. The oblong shape in a suitable orientation may also be used to reduce capacitive coupling between one of the bonding pads and nearby wires.

Abstract: A display panel including a circuit board, a plurality of bonding pads, a plurality of light emitting devices, and a plurality of solder patterns is provided. The bonding pads are disposed on the circuit board, and each includes a first metal layer and a second metal layer. The second metal layer is located between the first metal layer and the circuit board. The first metal layer includes an opening overlapping the second metal layer. A material of the first metal layer is different from a material of the second metal layer. The light emitting devices are electrically bonded to the bonding pads. Each of the solder patterns electrically connects one of the light emitting devices and one of the bonding pads. The solder patterns each contact the second metal layer through the opening of the first metal layer of one of the bonding pads to form a eutectic bonding.

Abstract: An electronic device includes a substrate, a first silicon transistor, a second silicon transistor and a first oxide semiconductor transistor. The first silicon transistor, the second silicon transistor and the first oxide semiconductor transistor are disposed on the substrate. The first silicon transistor has a first terminal electrically connected to a first voltage level, a second terminal and a control terminal. The second silicon transistor has a first terminal electrically connected to the second terminal of the first silicon transistor, a second terminal electrically connected to a second voltage level, and a control terminal electrically connected to the control terminal of the first silicon transistor. The first oxide semiconductor transistor has a first terminal electrically connected to the first terminal of the second silicon transistor. Wherein, a voltage value of the first voltage level is greater than a voltage value of the second voltage level.

Abstract: A method of transferring a thin film includes: providing a first element structure, wherein the first element structure includes a first substrate and a functional film layer formed on the first substrate; completely removing the first substrate, wherein steps of the completely removing the first substrate includes: conducting an etching step to erode the first substrate, and conducting a grinding step to planarize the eroded first substrate; and after completely removing the first substrate, attaching the functional film layer on a second substrate to form a second element structure.

Abstract: A multi-purpose tool assembly may comprise one or more body members. A body member may comprise a magnet, a main body and a bit. The main body may comprise various sides, one or more of which may include one or more apertures on its surface and one or more bits protruding therefrom. The bit may include a bit body and a bit head. The body members may include differently configured bits. Bits may be inserted into the apertures to connect the body members. The bit assembly may comprise one or more attachment members. An attachment member may attach two or more bits together.

Abstract: A method of transferring a thin film includes: providing a first element structure, wherein the first element structure includes a first substrate and a functional film layer formed on the first substrate; completely removing the first substrate, wherein steps of the completely removing the first substrate includes: conducting an etching step to erode the first substrate, and conducting a grinding step to planarize the eroded first substrate; and after completely removing the first substrate, attaching the functional film layer on a second substrate to form a second element structure.

Abstract: A multi-purpose bit assembly is shown and described herein. The tool assembly may comprise one or more body members. A body member may comprise a magnet, a main body and a bit. The main body may comprise various sides, one or more of which may include one or more apertures on its surface and one or more bits protruding therefrom. The bit may include a bit body and a bit head. The body members may include differently configured bits. Bits may be inserted into the apertures to connect the body members. The bit assembly may comprise one or more attachment members. An attachment member may attach two or more bits together.

Abstract: The present invention provides on IC test substrate for testing various signals, a combined flexible and rigid PCB included in the structure is applicable to perform a mission including for example: stabilizing power input/output, signal transfer by a connector; general, power, and high frequency signal transmission in preserved integrity state.

Abstract: The present invention provides on IC test substrate for testing various signals, a combined flexible and rigid PCB included in the structure is applicable to perform a mission including for example: stabilizing power input/output, signal transfer by a connector; general, power, and high frequency signal transmission in preserved integrity state.